MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

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Vgs - Gate-Source Breakdown Voltage
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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRF640NSTRLPBF


MOSFET N Trench 200V 18A 4V @ 250uA 150 mΩ @ 11A,10V TO-263-2 RoHS
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Infineon 4609
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between Fri. 12 Dec to Wed. 17 Dec
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AUD 0.6047

Multiples of: 1

   N - Channel  - 55 C+ 175 C Smd/SmtD2PAKReel       
DMTH6010LPDQ-13


MOSFET MOSFET BVDSS: 41V-60V
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Diodes Incorporated 3223
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between Thu. 04 Dec to Mon. 08 Dec
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AUD 0.8224

Multiples of: 1

         Smd/SmtPowerdi5060 - C - 8Cut TapeSi    Aec - Q101 
STU10N60M2


STMicroelectronics MOSFET N-CH 600V 0.56Ohm 7.5A MDmesh M2
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STMicroelectronics 3222
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between Thu. 04 Dec to Mon. 08 Dec
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AUD 0.9725

Multiples of: 1

7.5 A600 V560 mOhmsn - channel 3 V- 55 C+ 150 C85 Wthrough holeIPAK - 3Tubesi1 channel25 V13.5 nC  mdmesh
HXY30N06NF


60V 30A 25mΩ@10V,15A N Channel DFN-8L(5x6) MOSFETs ROHS
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HXY MOS 3220
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between Fri. 12 Dec to Wed. 17 Dec
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AUD 0.1442

Multiples of: 5

                   
FDV304P-NL-VB


20V 5A 35mΩ@10V P Channel SOT-23 MOSFETs ROHS
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VBsemi Elec 3219
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between Fri. 12 Dec to Wed. 17 Dec
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AUD 0.0656

Multiples of: 5

                   
SWHA065R03VLT


30V 58A 6.4mΩ DFN(5x6) MOSFETs ROHS
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Sam&wing 3216
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between Fri. 12 Dec to Wed. 17 Dec
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AUD 0.1171

Multiples of: 5

                   
RQ6C050BCTCR


MOSFET Pch -20V -5A Si MOSFET
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ROHM 3215
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between Thu. 04 Dec to Mon. 08 Dec
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AUD 0.4941

Multiples of: 1

5 A20 V27 mOhmsP - Channel 1.2 V- 55 C+ 150 C1.25 WSmd/SmtSOT - 457 - 6Cut TapeSi1 Channel8 V10.4 nCEnhancement  
CMLDM7002AG TR


Central Semiconductor MOSFET Dual N-Channel Enh Mode
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Central Semiconductor 3215
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between Thu. 04 Dec to Mon. 08 Dec
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AUD 0.625

Multiples of: 1

280 mA60 V2 OhmsN - Channel  - 65 C+ 150 C350 mWSmd/SmtSOT - 563 - 6ReelSi2 Channel40 V592 pCEnhancement Cmldm7
FDS4480


Fairchild Semiconductor MOSFET SO-8
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ON Semiconductor 3195
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between Thu. 04 Dec to Mon. 08 Dec
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AUD 0.8329

Multiples of: 1

10.8 A40 V12 mOhmsN - Channel  - 55 C+ 175 C2.5 WSmd/SmtSOIC - 8 NarrowReelSi1 Channel- 20 v , + 30 V Enhancement Powertrench
SIL2308-TP


MOSFET Dual N&P-Ch 20Vds 5A -4A 8Vgs 12Vgs
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Micro Commercial Components (MCC) 3118
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between Fri. 28 Nov to Thu. 04 Dec
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AUD 0.1444

Multiples of: 1

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