MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
RQ3L090GNTB


MOSFET NCH 60V 30A POWER
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ROHM 3170
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AUD 0.9289
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30 A60 V13.9 mOhmsN - Channel 1.3 V- 55 C+ 150 C20 WSmd/SmtH SMT - 8Cut TapeSi1 Channel20 V24.5 nCEnhancement  
RQ6E030SPTR


MOSFET PCH -30V -3A SMALL SIGNAL
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ROHM 3169
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AUD 0.3457
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3 A30 V80 mOhmsP - Channel 1 V- 55 C+ 150 C1.25 WSmd/SmtSOT - 457T - 6Cut TapeSi1 Channel20 V6 nCEnhancement  
ZXMS6004N8Q-13


MOSFET Low Side IntelliFET
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Diodes Incorporated 3168
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AUD 0.3789
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           Cut Tape       
BSC12DN20NS3G


Infineon Technologies MOSFET N-Ch 200V 11.3A TDSON-8 OptiMOS 3
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Infineon 3167
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AUD 0.8171
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11.3 A200 V108 mOhmsN - Channel 2 V- 55 C+ 150 C50 WSmd/SmtTDSON - 8ReelSi1 Channel20 V8.7 nCEnhancement Optimos
BXT230P03B


Transistor: P-MOSFET
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Bridgelux 3166
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AUD 0.2311
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DMN3016LK3-13


MOSFET 30V N-Ch Enh 30Vds 20Vgs 1415pF 25.1nC
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Diodes Incorporated 3165
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AUD 0.3143
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12.4 A30 V12 mOhmsN - Channel20 V2.3 V- 55 C+ 150 C2.8 WSmd/SmtTO - 252ReelSi1 Channel20 V25.1 nCEnhancement  
SI1317DL-T1-BE3


P-Channel 20V 1.4A (Ta), 1.4A (Tc) 400mW (Ta), 500mW (Tc) Surface Mount SC-70-3
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Vishay 3163
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AUD 0.1698
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          SC - 70 , SOT - 323Digi - Reel®Mosfet (Metal Oxide)      
FQPF19N20C


MOSFET 200V N-Channel Advance Q-FET
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ON Semiconductor 3140
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AUD 1.2379
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19 A200 V170 mOhmsN - Channel  - 55 C+ 150 C43 WThrough HoleTO - 220FTubeSi1 Channel30 V Enhancement Qfet
SSM3J56MFV,L3F


MOSFET Small Signal MOSFET
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Toshiba 1804
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AUD 0.0549
Multiples of: 10

- 800 mA- 20 V4 OhmsP - Channel - 300 mV + 150 C800 mWSmd/SmtSOT - 723 - 3ReelSi1 Channel+/- 8 V1.6 nCEnhancement  
PSMN7R0-60YS,115


MOSFET Single N-Channel 60V 356A 117W 9.3mOhms
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Nexperia 1710
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AUD 0.9865
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89 A60 V6.4 mOhmsN - Channel 2 V- 55 C+ 175 C117 WSmd/SmtSOT - 669ReelSi1 Channel10 V45 nCEnhancement  
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