MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
FS4409


30V 14A 1PCSPChannel SOP-8 MOSFETs ROHS
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FOSAN 2973
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AUD 0.2053
Multiples of: 5

                   
FDD2670


Fairchild Semiconductor MOSFET N-CH 200V 18A Q-FET
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ON Semiconductor 2973
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AUD 1.2642
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3.6 A200 V130 mOhmsN - Channel20 V - 55 C+ 150 C3.2 WSmd/SmtDPAK - 3ReelSi1 Channel20 V Enhancement Powertrench
PSMN018-80YS.115


MOSFET N Trench 80V 45A (Tc) 4V @ 1mA 18 mΩ @ 5A,10V SOT-669 RoHS
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Nexperia 2972
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AUD 1.5881
Multiples of: 1

                   
RF4E080GNTR


ROHM Semiconductor MOSFET 4.5V Drive Nch MOSFET
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ROHM 2969
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AUD 0.2134
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8 A30 V17.6 mOhmsN - Channel 2.5 V- 55 C+ 150 C2 WSmd/SmtDFN2020 - 8ReelSi1 Channel20 V5.8 nC   
NTMFS5C628NLT1G


MOSFET TRENCH 6 60V NFET
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ON Semiconductor 2969
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AUD 0.5271
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150 A60 V3.3 mOhmsN - Channel 1.2 V- 55 C+ 175 C110 WSmd/SmtDFN - 5ReelSi1 Channel+/- 20 V52 nCEnhancement  
BSS84LT1G-MS


55V 300mA 1W 4.5Ω@10V P Channel SOT-23 MOSFETs ROHS
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MSKSEMI 2968
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AUD 0.0308
Multiples of: 20

                   
SI4925BDY-T1-E3-HXY


30V 8.5A 20m 2 P-Channel SOP-8 MOSFETs ROHS
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HXY MOS 2968
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AUD 0.3439
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IPB160N04S4-H1


Infineon Technologies MOSFET N-Ch 40V 160A D2PAK-6 OptiMOS-T2
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Infineon 2968
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AUD 1.545
Multiples of: 1

160 A40 V1.6 mOhmsN - Channel 2 V- 55 C+ 175 C167 WSmd/SmtD2PAK - 7ReelSi1 Channel20 V105 nCEnhancementAec - Q101Optimos
IPU60R2K1CEAKMA1


MOSFET CONSUMER
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Infineon 2966
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AUD 0.266
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 600 V       Through HoleTO - 251 - 3TubeSi     Coolmos
WSD4048DN56


40V 20A 14mΩ@10V,10A 25W 2.5V@250uA 1PCSN-Channel&1PCSP-Channel DFN-8(5x6) MOSFETs ROHS
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Winsok 1545
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AUD 0.3407
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