MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRLR8726TRPBF-HXY


30V 100A 5.5mΩ@10V,30A 2.5V null TO252-2L MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

HXY MOS 3147
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AUD 0.153
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AON7264E-HXY


60V 40A 15mΩ@10V,20A 2.5V null DFN3x3-8L MOSFETs ROHS
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HXY MOS 3147
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AUD 0.2172
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FDD4243


TO-252-3L MOSFETs ROHS
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TECH PUBLIC 3147
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AUD 0.296
Multiples of: 5

                   
NTD20N06T4G


MOSFET 60V 20A N-Channel
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ON Semiconductor 3146
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AUD 1.0913
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20 A60 V37.5 mOhmsN - Channel  - 55 C+ 175 C60 WSmd/SmtDPAKReelSi1 Channel20 V Enhancement  
BSC028N06LS3GATMA1


Transistor: N-MOSFET; unipolar; 60V; 100A; 139W; PG-TDSON-8
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Infineon 3143
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AUD 1.7268
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            Optimos 3      
NTBLS1D5N10MCTXG


100V 1.5mΩ 3.4W 1PCSNChannel TOLL-8L MOSFETs ROHS
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ON Semiconductor 3143
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AUD 6.5825
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312 A100 V1.5 mOhmsN - Channel 4 V- 55 C+ 175 C322 WSMD/SMTH - PSOF8L - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V131 nCEnhancement  
DMN3009SFG-7


MOSFET 30V N-Ch Enh FET 20Vgs Low Rdson
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Diodes Incorporated 3139
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AUD 0.4557
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16 A30 V9 mOhmsN - Channel 1 V- 55 C+ 150 C900 mWSmd/SmtPowerdi3333 - 8Cut TapeSi1 Channel20 V42 nCEnhancement  
FDMC86340ET80


Fairchild Semiconductor MOSFET
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ON Semiconductor 3139
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AUD 2.7937
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48 A80 V8.5 mOhmsN - Channel20 V2 V- 55 C+ 150 C54 WSmd/SmtPOWER - 33 - 8ReelSi1 Channel20 V31 nC  Powertrench Power Clip
FDBL0065N40


Fairchild Semiconductor MOSFET
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ON Semiconductor 3139
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AUD 4.4395
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300 A40 V500 uOhmsn - channel20 V2 V- 55 C+ 175 C429 Wsmd/smtMO - 299A - 8Cut Tapesi1 channel20 V220 nCenhancement powertrench
IPD80R1K4P7ATMA1


Transistor: N-MOSFET; unipolar; 800V; 2.7A; 32W; PG-TO252-3
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Infineon 3138
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AUD 0.5797
Multiples of: 1

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