MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SI2302AI-MS


20V 3A 35mΩ@4.5V,3A 800mW 750mV@250uA 23pF@10V N Channel 240pF@10V 2.7nC@10V -55℃~+150℃@(Tj) SOT-23 MOSFETs ROHS
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MSKSEMI 2919
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AUD 0.0427
Multiples of: 10

                   
SI2310AI-MS


null 3A 86mΩ@10V null SOT-23 MOSFETs ROHS
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MSKSEMI 2919
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AUD 0.075
Multiples of: 10

                   
G250N03IE


30V 5.3A 24m@4.5V 1.3V 1PCSNChannel SOT-23 MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

GOFORD 2919
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AUD 0.0975
Multiples of: 10

                   
AO4459-HXY


30V 5.8A 20mΩ@10V,7A 2.5W 3V P Channel SOP-8 MOSFETs ROHS
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HXY MOS 2919
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AUD 0.103
Multiples of: 5

                   
IPB160N04S4-H1


Infineon Technologies MOSFET N-Ch 40V 160A D2PAK-6 OptiMOS-T2
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Infineon 2919
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AUD 1.545
Multiples of: 1

160 A40 V1.6 mOhmsN - Channel 2 V- 55 C+ 175 C167 WSmd/SmtD2PAK - 7ReelSi1 Channel20 V105 nCEnhancementAec - Q101Optimos
IPB031N08N5ATMA1


Transistor: N-MOSFET; unipolar; 80V; 120A; 167W; PG-TO263-3
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Infineon 2919
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AUD 2.0687
Multiples of: 1

            Optimos 5      
IRFS4229TRLPBF


Transistor: N-MOSFET; unipolar; 250V; 45A; 330W; D2PAK
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Infineon 2914
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AUD 2.709
Multiples of: 1

45 A250 V48 mOhmsN - Channel30 V - 40 C+ 175 C330 WSmd/SmtD - PAK - 3Reel   72 nCEnhancement  
Si2306BDS-T1-GE3-HXY


30V 4A 29m 1PCSNChannel SOT-23 MOSFETs ROHS
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HXY MOS 2832
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AUD 0.0786
Multiples of: 10

                   
WNM2016


SOT-23 MOSFETs ROHS
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Yongyutai Electronics 2619
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AUD 0.0453
Multiples of: 10

                   
SI2392ADS-T1-GE3


100V 2.6A 120m@4.5V,2A 1.4W 2.5V@250uA 1 N-Channel SOT-23 MOSFETs ROHS
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ElecSuper 1513
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AUD 0.0689
Multiples of: 10

                   
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