MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRFS3207TRLPBF


Transistor: N-MOSFET; unipolar; 75V; 180A; 330W; D2PAK
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Infineon 3880
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AUD 2.9026
Multiples of: 800

180 A75 V3.6 mOhmsN - Channel    330 WSmd/SmtD2PAKReelSi1 Channel20 V180 nC   
FDB3632


Transistor: N-MOSFET; unipolar; 100V; 80A; 310W; D2PAK
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ON Semiconductor 3104
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AUD 2.749
Multiples of: 800

            Powertrench®      
AOB27S60L


Trans MOSFET N-CH 600V 27A 3-Pin(2+Tab) D2PAK T/R
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Alpha & Omega 3104
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AUD 3.0024
Multiples of: 800

27 A  N    357 WSurface Mount Tape And Reel    Enhancement  
IRFP3703PBF


N-Channel 30 V 210A (Tc) 3.8W (Ta), 230W (Tc) Through Hole TO-247AC
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Infineon 3104
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AUD 2.9603
Multiples of: 400

210 A30 V2.8 mOhmsN - Channel20 V - 55 C+ 175 C230 WThrough HoleTO - 247 - 3Tube   209 nCEnhancement  
FQD5N60CTM


MOSFET 600V N-Channel Adv Q-FET C-Series
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ON Semiconductor 3101
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AUD 1.0946
Multiples of: 1

   N - Channel  - 55 C+ 150 C Smd/SmtDPAKReel       
BSC016N03LS G


MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3
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Infineon 3101
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AUD 1.2833
Multiples of: 1

100 A30 V1.3 mOhmsN - Channel 1 V- 55 C+ 150 C125 WSmd/SmtTDSON - 8ReelSi1 Channel20 V131 nCEnhancement Optimos
FDD86567_F085


MOSFET MV7 60/20V 1000A N-channel PowerTrench MOSFET
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ON Semiconductor 3089
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AUD 1.7268
Multiples of: 1

100 A60 V6 mOhmsN - Channel 2 V- 55 C+ 175 C227 WSmd/SmtTO - 252 - 3ReelSi1 Channel+/- 20 V63 nCEnhancement  
DMTH6010LPD-13


MOSFET MOSFET BVDSS: 41V-60V
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Diodes Incorporated 3086
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AUD 0.9167
Multiples of: 1

         Smd/SmtPowerdi5060 - C - 8Cut TapeSi      
IRF530NSTRLPBF


MOSFET N Trench 100V 17A (Tc) 4V @ 250uA 90 mΩ @ 9A,10 TO-263-2 RoHS
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Infineon 2916
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AUD 0.4678
Multiples of: 1

17 A100 V90 mOhmsN - Channel 4 V- 55 C+ 175 C3.8 WSmd/SmtD2PAKReelSi1 Channel20 V37 nC   
IRFS3006TRL7PP


Transistor: N-MOSFET; unipolar; 60V; 293A; 375W; D2PAK
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 2328
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AUD 2.645
Multiples of: 800

293 A60 V1.5 mOhmsN - Channel  - 55 C 375 WSmd/SmtD2PAKReelSi1 Channel20 V200 nCEnhancement  
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