MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
VP2106N3-G


Transistor: P-MOSFET; unipolar; -60V; -0.5A; 1W; TO92
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Microchip 6790
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AUD 0.7525
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250 mA60 V15 OhmsP - Channel 1.5 V- 55 C+ 150 C1 WThrough HoleTO - 92BulkSi1 Channel- 5 V Enhancement  
NCE6020AI


MOSFET N Trench 60V 20A (Tc) 2.5V @ 250uA 35 mΩ @ 20A,10V TO-251 RoHS
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NCE Power 3065
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AUD 0.1459
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MCAC9D5N06YL-TP


MOSFETs N-CHANNEL MOSFET,DFN5060
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Micro Commercial Components (MCC) 3065
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AUD 0.309
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60 A60 V9.5 mOhmsN - Channel 3 V- 55 C+ 150 C69 WSMD/SMTDFN5060 - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V27 nCEnhancement  
HYG067N07NQ1D


68V 70A 6.8mΩ@10V,30A 93W 3.2V@250uA 139pF@25V N Channel 7.089nF@25V 110nC@10V -55℃~+175℃@(Tj) TO-252-2L MOSFETs ROHS
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HuaYi 3065
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AUD 0.3673
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HXY30G20DF


30V 16A 2.5V@250uA 1PCSN-Channel&1PCSP-Channel DFN-8L(3x3) MOSFETs ROHS
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HXY MOS 3060
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AUD 0.1348
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DMHC10H170SFJ-13


Diodes Incorporated MOSFET 100V Comp Enh FET 20Vgs w H-Bridge
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Diodes Incorporated 3060
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AUD 0.8119
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2.9 A , 2.3 A100 V111 mOhms , 191 mOhmsN - Channel, P - Channel 1 v , 3 V- 55 C+ 150 C2.1 WSmd/SmtV - DFN5045 - 12ReelSi4 Channel20 V9.7 nC , 17.5 nCEnhancement  
BSC077N12NS3GATMA1


Transistor: N-MOSFET; unipolar; 120V; 98A; 139W; PG-TDSON-8
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Infineon 3059
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AUD 2.0429
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            Optimos 3      
DMG1026UV-7


MOSFET MOSFET BVDSS: 41V-60 1V-60V,SOT563,3K
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Diodes Incorporated 2997
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AUD 0.1374
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440 mA60 V1.8 OhmsN - Channel  - 55 C+ 150 C580 mWSmd/SmtSOT - 563 - 6Cut TapeSi2 Channel20 V0.45 nCEnhancement  
QS8K21TR


ROHM Semiconductor MOSFET TRANS MOSFET NCH 45V 4A 8PIN
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ROHM 2947
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AUD 0.5937
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4 A45 V53 mOhmsN - Channel 4 V- 55 C+ 150 C1.5 WSmd/SmtT SMT - 8ReelSi1 Channel20 V120 nCEnhancement  
IAUT300N08S5N012ATMA2


Transistor: N-MOSFET; unipolar; 80V; 300A; 375W; PG-HSOF-8-1
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Infineon 2667
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AUD 4.0683
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            Optimos 5      
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