MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Id - Continuous Drain Current
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BUK78150-55A/CUF


MOSFETs BUK78150-55A/SOT223/SC-73
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Nexperia 3032
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AUD 0.357
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IRLR8743TRPBF


MOSFET N Trench 30V 160A 2.35V @ 100uA 3.1 mΩ @ 25A,10V TO-252-2 (DPAK) RoHS
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Infineon 3030
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AUD 0.7333
Multiples of: 1

160 A30 V3.9 mOhmsN - Channel    135 WSmd/SmtDPAKReelSi1 Channel20 V39 nC   
DMG3413L-7


MOSFET MOSFET BVDSS
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Diodes Incorporated 3026
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AUD 0.0842
Multiples of: 5

3 A20 V190 mOhmsP - Channel     Smd/SmtSOT - 23 - 3Cut TapeSi      
IPB80N06S4L05ATMA2


MOSFET N-Ch 60V 80A D2PAK-2
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Infineon 3026
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AUD 1.5587
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80 A60 V4.8 mOhmsN - Channel     Smd/SmtTO - 263 - 3Cut TapeSi1 Channel   Aec - Q101 
IPW90R120C3XKSA1


MOSFET HIGH POWER_LEGACY
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Infineon 3026
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AUD 10.8413
Multiples of: 240

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QS5U17TR


N-Channel 30 V 2A (Ta) 900mW (Ta) Surface Mount TSMT5
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ROHM 3025
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AUD 0.3806
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2 A30 V100 mOhmsN - Channel  - 55 C+ 150 C1.25 WSmd/SmtT SMT - 5ReelSi1 Channel12 V Enhancement  
SIA447DJ-T1-GE3


MOSFET -12V 13.5mOhm@4.5V 12A P-Ch G-III
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Vishay 3022
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AUD 0.2901
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12 A12 V11 mOhmsP - Channel 850 mV- 55 C+ 150 C19 WSmd/SmtPOWERPAK SC - 70 - 6L S in GLEReelSi1 Channel8 V80 nCEnhancement Trenchfet, Powerpak
ZVN3310FTA


MOSFET N-Channel - 100V - 100mA - 330mW - Surface Mount - SOT-23-3.
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Diodes Incorporated 3011
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AUD 0.2179
Multiples of: 5

100 mA100 V10 OhmsN - Channel 800 mV- 55 C+ 150 C330 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V Enhancement  
IRF3703PBF


N-Channel 30 V 210A (Tc) 3.8W (Ta), 230W (Tc) Through Hole TO-220AB
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Infineon 2191
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AUD 2.5402
Multiples of: 1

210 A30 V2.8 mOhmsN - Channel  - 55 C+ 175 C230 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V209 nCEnhancement  
SI7617DN-T1-GE3


P-Channel 30 V 35A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8
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Vishay 1855
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AUD 0.4776
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   P - Channel  - 55 C+ 150 C Smd/SmtPOWERPAK 1212 - 8Reel       
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