MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
2N7002


MOSFET N Trench 60V 115mA 2.5V @ 250uA 7.5 Ω @ 500mA,10V SOT-23 RoHS
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SLKORMICRO 3055
Ships to you
between Fri. 12 Dec to Wed. 17 Dec
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AUD 0.0116

Multiples of: 50

                   
BSO150N03MD G


MOSFET OptiMOS 3 M-Series PWR-MOSFET DUAL N-CH
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Infineon 3055
Ships to you
between Thu. 04 Dec to Mon. 08 Dec
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AUD 0.5867

Multiples of: 1

9.3 A30 V15 mOhmsN - Channel16 V1 V- 55 C+ 150 C1.4 WSmd/SmtDSO - 8ReelSi2 Channel20 V17 nC , 17 nCEnhancement Optimos
IRFH8307TRPBF


Transistor: N-MOSFET; unipolar; 30V; 42A; 156W; PQFN5X6
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Infineon 3055
Ships to you
between Fri. 28 Nov to Thu. 04 Dec
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AUD 1.2657

Multiples of: 1

100 A30 V1.3 mOhmsN - Channel20 V2.35 V  156 WSmd/SmtPQFN - 8 5X6ReelSi1 Channel20 V50 nC   
SQJ138EP-T1_GE3


MOSFET N-CHANNEL 40-V (D-S) 175C MOSFET
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Vishay 3054
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between Fri. 12 Dec to Wed. 17 Dec
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AUD 1.2229

Multiples of: 1

330 A40 V1.5 mOhmsN - Channel 3.5 V- 55 C+ 175 C312 WSMD/SMTPOWERPAK - SO - 8Cut Tape , ReelSi1 Channel- 20 V , + 20 V58 nCEnhancement TrenchFET
BSZ0703LSATMA1


Infineon DIFFERENTIATED MOSFETS
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Infineon 3053
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between Thu. 04 Dec to Mon. 08 Dec
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AUD 0.8434

Multiples of: 1

           Cut Tape       
IPL60R185C7AUMA1


MOSFET HIGH POWER_NEW
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Infineon 3053
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between Thu. 04 Dec to Mon. 08 Dec
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AUD 2.1408

Multiples of: 1

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TP65H480G4JSG-TR


N-Channel 650V 3.6A (Tc) 13.2W (Tc) Surface Mount 3-PQFN (5x6)
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Transphorm 3053
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between Thu. 04 Dec to Mon. 08 Dec
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AUD 2.4415

Multiples of: 1

          3 - SMD , FLAT LEADDigi - Reel®Ganfet (Gallium Nitride)      
ZVN4206ASTZ


Diodes Incorporated MOSFET N-Chnl 60V
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Diodes Incorporated 3052
Ships to you
between Thu. 04 Dec to Mon. 08 Dec
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AUD 0.4365

Multiples of: 1

600 mA60 V1.5 OhmsN - channel20 V3 V- 55 C+ 150 C700 mWThrough_HoleTO - 92 - 3BulkSi1 Channel20 V Enhancement  
SSM6J216FE,LF(A


MOSFETs
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Toshiba 3050
Ships to you
between Fri. 12 Dec to Wed. 17 Dec
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AUD 0.177

Multiples of: 5

                   
FKBA4903


DFN-8(5.2x5.5) MOSFETs ROHS
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SINO-IC 0
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AUD 0.1663

Multiples of: 5

                   
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