MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Id - Continuous Drain Current
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
DMP2012SN-7


Diodes Incorporated MOSFET 20V 700mA
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Diodes Incorporated 3040
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AUD 0.1676
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- 700 mA- 20 V300 mOhmsP - Channel12 V - 65 C+ 150 C500 mWSmd/SmtSOT - 23 - 3ReelSi1 Channel12 V Enhancement  
DMP2008UFG-13


Diodes Incorporated MOSFET 20V P-CH MOSFET
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Diodes Incorporated 3038
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AUD 0.3475
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14 A20 V8 mOhmsP - Channel 1 V- 55 C+ 150 C2.4 WSmd/SmtPowerdi3333 - 8ReelSi1 Channel8 V72 nCEnhancement  
JMSL0606AG


PDFN-8(5x5.8) MOSFETs ROHS
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JieJie 3038
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AUD 0.4455
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NCE6008AS


MOSFET N Trench 60V 8A (Tc) 2.2V @ 250uA 20 mΩ @ 8A,10V SOP-8 RoHS
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NCE Power 3036
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AUD 0.1896
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ASDM20N90Q-R


20V 90A 1.5mΩ@10V,30A 40W 0.75V@250uA 365pF@10V N Channel 3605pF@10V 36.6nC@10V -55℃~+150℃@(Tj) PDFN5x6-8 MOSFETs ROHS
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Ascend 3036
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AUD 0.2484
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RSR025N05TL


Trans MOSFET N-CH 45V 2.5A 3-Pin TSMT T/R
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ROHM 3036
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AUD 0.5063
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2.5 A45 V100 mOhmsN - Channel 3 V- 55 C+ 150 C1 WSMD/SMTSOT - 346T - 3Reel , Cut TapeSi1 Channel- 20 V , + 20 V3.6 nCEnhancement  
STD5N95K3


MOSFET 950 VDSS <3.5 RDS 4A ID 90W Pw
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STMicroelectronics 3035
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AUD 1.4582
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4 A950 V3 OhmsN - Channel    90 WSmd/SmtDPAKReelSi1 Channel30 V19 nC  Supermesh
FDB86563_F085


Fairchild Semiconductor MOSFET
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ON Semiconductor 3034
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AUD 3.0032
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110 A60 V3.2 mOhmsN - Channel 2 V- 55 C+ 175 C333 WSmd/SmtTO - 263 - 3ReelSi1 Channel+/- 20 V126 nCEnhancement Powertrench
AO4409


30V 13.5A 11mO@10V,13.5A P Channel SOP-8 MOSFETs ROHS
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VBsemi Elec 3033
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AUD 0.4679
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SI1308EDL-T1-GE3


MOSFET 30V Vds 12V Vgs SC70-3
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Vishay 1076
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AUD 0.1174
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1.5 A30 V132 mOhmsN - Channel12 V0.6 v to 1.5 V- 55 C+ 150 C400 mWSmd/SmtSOT - 323 - 3ReelSi1 Channel10 V1.4 nCEnhancement Trenchfet
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