MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
MGSF2N02ELT1G


MOSFET NFET SOT23 20V 2.8A 85mOhm
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ON Semiconductor 8730
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AUD 0.1934
Multiples of: 3000

2.8 A20 V85 mOhmsN - Channel 500 mV- 55 C+ 150 C1.25 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel4.5 V3.5 nCEnhancement  
SI2374DS-T1-GE3


MOSFET 20V Vds 8V Vgs SOT-23
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Vishay 8730
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AUD 0.1703
Multiples of: 3000

5.9 A20 V30 mOhmsN - Channel 400 mV- 55 C+ 150 C1.7 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel4.5 V20 nCEnhancement Trenchfet
BUK6D30-40EX


MOSFET BUK6D30-40E/SOT1220/SOT1220
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Nexperia 5820
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AUD 0.1987
Multiples of: 1

18 A40 V30 mOhmsN - Channel 2.5 V- 55 C+ 175 C19 WSMD/SMTDFN2020MD - 6Cut Tape , Reel , ReelSi1 Channel- 20 V , + 20 V8 nCEnhancementAEC - Q100 
DMC25D0UVT-7


MOSFET 20V Enh Mode FET
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Diodes Incorporated 2910
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AUD 0.197
Multiples of: 3000

400 mA , - 2.6 A25 v , - 30 V4 Ohms , 300 mOhmsN - Channel, P - Channel 650 mV , - 500 mV- 55 C+ 150 C1.2 WSmd/SmtTSOT - 26 - 6ReelSi2 Channel8 v , 12 V0.7 nC , 21 nCEnhancement  
FDS7779Z(UMW)


30V 16A 2.5W 7.2m@10V,16A 1.5V@250uA SOP-8 MOSFETs ROHS
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Youtai 2910
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AUD 0.2196
Multiples of: 5

                   
SI3417DV-T1-GE3


Vishay Semiconductors MOSFET -30V .0252ohm-10V -8A P-Ch T-FET
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Vishay 2910
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AUD 0.1994
Multiples of: 3000

8 A- 30 V30 mOhmsP - Channel - 3 V- 55 C+ 150 C4.2 WSmd/SmtTSOP - 6ReelSi1 Channel20 V32 nC  Trenchfet
IPN60R3K4CEATMA1


MOSFET CONSUMER
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Infineon 2910
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AUD 0.2063
Multiples of: 3000

2.6 A600 V7.96 OhmsN - Channel 2.5 V- 40 C+ 150 C5 WSmd/SmtSOT - 223 - 3ReelSi1 Channel+/- 20 V4.6 nCEnhancement Coolmos
RTR020P02TL


MOSFET P-CH 20V 2A TSMT3
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ROHM 2910
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AUD 0.209
Multiples of: 3000

2 A30 V180 mOhmsP - Channel  - 55 C+ 150 C1 WSmd/SmtT SMT - 3ReelSi1 Channel12 V Enhancement  
NVJS3151PT1G


MOSFETs NFET SO8FL 12V 3.3A 60MOHM
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ON Semiconductor 2910
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AUD 0.2043
Multiples of: 1

2.7 A12 V160 mOhmsP - Channel 1.2 V- 55 C+ 150 C625 mWSMD/SMTSC - 88 - 6Reel , Cut TapeSi1 Channel- 12 V , 12 V8.6 nCEnhancement  
DMN3016LFDE-7


Diodes Incorporated MOSFET N-CHANNEL EH MODE 30V 10A 12mOhm
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Diodes Incorporated 0
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AUD 0.199
Multiples of: 5

10 A30 V16 mOhmsN - Channel 1.4 V- 55 C+ 150 C2.02 WSmd/SmtU - DFN2020 - 6Reel-1 Channel+/- 20 v , +/- 20 V25.1 nCEnhancement  
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