MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SI2366DS-T1-GE3


Vishay Semiconductors MOSFET 30 Volts 5.8 Amps 2.1 Watts
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Vishay 14550
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AUD 0.2313
Multiples of: 3000

5.8 A30 V36 mOhmsN Channel 1.2 V- 55 C+ 150 C2.1 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V6.4 nCEnhancement Trenchfet
SSM3K123TU,LF(T


Transistor: N-MOSFET; unipolar; 20V; 4.2A; 800mW; UFM
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Toshiba 2910
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AUD 0.2019
Multiples of: 3000

                   
FDC655BN


Transistor: N-MOSFET; unipolar; 30V; 6.3A; 1.6W; SuperSOT-6
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ON Semiconductor 2910
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AUD 0.214
Multiples of: 1

   N Channel               
CSD17571Q2


MOSFET 30V N-CH Pwr MOSFETs
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Texas Instruments 2910
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AUD 0.2165
Multiples of: 3000

39 A30 V29 mOhmsN - channel20 V1.6 V- 55 C+ 150 C2.5 WSmd/smtWSON - 6 FETReelSi1 Channel10 V2.4 nCEnhancement Nexfet
US5U38TR


MOSFET P Chan-20V+/-1A 2.5V Drive
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ROHM 2910
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AUD 0.2282
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1 A20 V390 mOhmsP - Channel  - 55 C+ 150 C700 mWSmd/SmtTUMT - 5ReelSi1 Channel12 V Enhancement  
MCH6613-TL-E


MOSFET PCH+NCH 2.5V DRIVE SERIES
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ON Semiconductor 2910
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AUD 0.2293
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350 mA30 V3.7 Ohmsn and p - channel  - 55 C+ 150 C800 mWsmd/smtMCPH - 6Reelsi2 channel10 V1.58 nC   
ZVP3310FTA


P-Channel 100 V 75mA (Ta) 330mW (Ta) Surface Mount SOT-23-3
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Diodes Incorporated 2910
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AUD 0.3113
Multiples of: 1

75 mA100 V20 OhmsP - Channel 1.5 V- 55 C+ 150 C330 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V Enhancement  
DMN2080UCB4-7


MOSFET MOSFET BVDSS: 8V-24V
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Diodes Incorporated 2910
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AUD 0.2404
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4 A20 V43 mOhmsN - Channel 400 mV- 55 C+ 150 C1.25 W   Si1 Channel5 V7.4 nCEnhancement  
DMP2305UVT-7


Diodes Incorporated MOSFET 20V P-CH MOSFET
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Diodes Incorporated 2887
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AUD 0.2364
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4.23 A20 V45 mOhmsP - Channel 900 mV- 55 C+ 150 C1.25 WSmd/SmtTSOT - 26 - 6ReelSi1 Channel8 V7.6 nCEnhancement  
SI1922EDH-T1-GE3


MOSFET 20V 1.3A 1.25W
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Vishay 1584
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AUD 0.2402
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1.3 A20 V0.198 OhmsN - Channel8 V1 V- 55 C+ 150 C1.25 WSmd/SmtSOT - 363 - 6ReelSi2 Channel4.5 V1.6 nCEnhancement Trenchfet
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