MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IPB180N06S4H1ATMA2


MOSFET N-Ch 60V 180A D2PAK-6
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Infineon 3001
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AUD 2.8635
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180 A60 V1.7 mOhmsN - Channel     Smd/SmtTO - 263 - 7ReelSi1 Channel   Aec - Q101 
Hot IRFU014PBF


N-Channel 60 V 7.7A (Tc) 2.5W (Ta), 25W (Tc) Through Hole TO-251AA
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Vishay 3000
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AUD 0.8713
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   N - Channel  - 55 C+ 150 C Through HoleIPAKTubeSi      
HSBB3072


30V 100A 2mΩ@10V,20A 42W 1.7V@250uA 229pF@15V N Channel 2.86nF@15V 26nC@4.5V -55℃~+150℃@(Tj) PRPAK3x3 MOSFETs ROHS
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HUASHUO 2998
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AUD 0.3734
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G16P03S-B


SOP-8 MOSFETs ROHS
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GOFORD 2997
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AUD 0.0598
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KMA3D7P20SA-HXY


20V 3A 60m 1PCSPChannel SOT-23 MOSFETs ROHS
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HXY MOS 2997
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AUD 0.1406
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SI1926DL-T1-E3


MOSFET 60V 0.37A 0.51W
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Vishay 2997
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AUD 0.2014
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370 mA60 V1.4 OhmsN - Channel 1 V- 55 C+ 150 C510 mWSmd/SmtSC - 70 - 6ReelSi2 Channel10 V0.9 nCEnhancement Trenchfet
RF4E070GNTR


ROHM Semiconductor MOSFET 4.5V Drive Nch MOSFET
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ROHM 2996
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AUD 0.2293
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7 A30 V21.4 mOhmsN - Channel 2.5 V- 55 C+ 150 C2 WSmd/SmtDFN2020 - 8ReelSi1 Channel20 V4.8 nC   
STL120N4F6AG


STMicroelectronics MOSFET
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STMicroelectronics 2992
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AUD 1.6839
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55 A40 V2.9 mOhmsN - Channel 2 V- 55 C+ 175 C96 WSmd/SmtPowerflat - 8ReelSi1 Channel20 V63 nCEnhancementAec - Q101Stripfet
Hot IRFS7440TRLPBF


MOSFET N Trench 40V 120A (Tc) 3.9V @ 100uA 2.5 mΩ @ 100A,10V TO-262 RoHS
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Infineon 1981
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AUD 0.4153
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208 A40 V2.5 mOhmsN - Channel 3.9 V- 55 C+ 175 C208 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel 135 nCEnhancement Strongirfet
PJA3400


MOSFET N Trench 30V 4.9A 1.3V @ 250uA 38 mΩ @ 4.9A,10V SOT-23 RoHS
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Panjit 0
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AUD 0.0841
Multiples of: 5

                   
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