MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BSS87H6327FTSA1


Transistor: N-MOSFET; unipolar; 240V; 0.26A; 1W; SOT89-4
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Infineon 35890
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AUD 0.2799
Multiples of: 1000

            Optimos      
BSS192PH6327FTSA1


Transistor: P-MOSFET; unipolar; -250V; -0.19A; 1W; PG-SOT89
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Infineon 29100
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AUD 0.2481
Multiples of: 1000

            Sipmos      
SI3993CDV-T1-GE3


MOSFET 20V 2.2A DUAL PCH
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Vishay 5820
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AUD 0.3392
Multiples of: 3000

2.2 A- 30 V133 mOhmsP - Channel20 V- 3 V- 55 C+ 150 C1.15 WSmd/SmtTSOP - 6ReelSi  3.1 nCEnhancement Trenchfet
DMN3035LWN-7


Diodes Incorporated MOSFET N-Ch 30V Dual Enh 30Vgss 0.77W 399pF
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Diodes Incorporated 3110
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AUD 0.2627
Multiples of: 1

5.5 A , 5.5 A30 v , 30 V45 mOhms , 45 mOhmsN - Channel 1 v , 1 V- 55 C+ 150 C1.78 WSmd/SmtV - DFN - 3020 - 8Reel-2 Channel+/- 20 v , +/- 20 V9.9 nC , 9.9 nCEnhancement  
ZXMP3F30FHTA


MOSFET 30V P-Channel MOSFET 20V VGS -15.3A IDM
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Diodes Incorporated 2910
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AUD 0.2455
Multiples of: 3000

           Reel       
SIA485DJ-T1-GE3


MOSFET -150V Vds 20V Vgs PowerPAK SC-70
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Vishay 2910
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AUD 0.2701
Multiples of: 1

           Cut TapeSi     Trenchfet
SI2338DS-T1-GE3


N-Channel 30 V 6A (Tc) 1.3W (Ta), 2.5W (Tc) Surface Mount SOT-23-3 (TO-236)
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Vishay 2910
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AUD 0.266
Multiples of: 3000

6 A30 V23 mOhmsN - Channel 1.2 V- 55 C+ 150 C2.5 WSmd/SmtSOT - 23 - 3ReelSi1 Channel20 V8.2 nCEnhancement Trenchfet
ZVN3306FTA


ZVN3306FTA SOT23 MOSFET
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Diodes Incorporated 2910
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AUD 0.2655
Multiples of: 3000

150 mA60 V5 Ohmsn - channel  - 55 C+ 150 C330 mWsmd/smtSOT - 23 - 3Reel  20 V enhancement  
PSMN9R5-30YLC,115


N-Channel 30 V 44A (Tc) 34W (Tc) Surface Mount LFPAK56, Power-SO8
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Nexperia 2910
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AUD 0.289
Multiples of: 1

44 A30 V9.8 mOhmsN - Channel    34 WSmd/SmtLFPAKReelSi1 Channel20 V    
RSR020P05TL


ROHM Semiconductor MOSFET TRANS MOSFET P-CH 3PIN TSMT TR
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ROHM 201
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AUD 0.4269
Multiples of: 1

2 A- 45 V130 mOhmsP - Channel  - 55 C+ 150 C1 WSmd/SmtT SMT - 3ReelSi1 Channel20 V9.5 nCEnhancement  
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