MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SI3476DV-T1-GE3


Vishay Siliconix MOSFET 80V .093ohm10V 4.6A N-Ch T-FET
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Vishay 2910
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AUD 0.278
Multiples of: 3000

4.6 A80 V105 mOhmsN - Channel20 V3 V- 55 C+ 150 C3.6 WSmd/SmtTSOP - 6ReelSi1 Channel10 V4.9 nCEnhancement Thunderfet Trenchfet
NTLJF4156NTAG


MOSFET NFET 2X2 30V 4A 70MOHM
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ON Semiconductor 2910
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AUD 0.2902
Multiples of: 1

3.7 A30 V70 mOhmsN - Channel  - 55 C+ 150 C1.5 WSmd/SmtWDFN - 6ReelSi1 Channel8 V Enhancement  
SIA918EDJ-T1-GE3


MOSFET Dual N-Ch 30V Vds 3.6nC Qg Typ
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Vishay 2910
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AUD 0.2976
Multiples of: 3000

           Cut TapeSi     Trenchfet
AP9567GH


TO-252 MOSFETs ROHS
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APEC 2910
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AUD 0.4389
Multiples of: 5

                   
PJQ5530_R2_00201


MOSFETs 30V N-Channel (LL) SGT MOSFET
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Panjit 2910
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AUD 0.3119
Multiples of: 1

49 A30 V7.3 mOhmsN - Channel 2.5 V- 55 C+ 150 C27.8 WSMD/SMTDFN - 5060X - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V12.4 nCEnhancement  
STT4P3LLH6


STMicroelectronics MOSFET
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STMicroelectronics 2910
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AUD 0.3146
Multiples of: 3000

4 A30 V56 mOhmsP - Channel 1 V + 150 C1.6 WSmd/SmtSOT - 23 - 6ReelSi1 Channel- 10 V6 nCEnhancement Stripfet
VN10LFTA


60V 150mA 5O@10V,500mA 330mW N Channel SOT-23 MOSFETs ROHS
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Diodes Incorporated 2910
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AUD 0.359
Multiples of: 3000

150 mA60 V5 OhmsN - Channel 800 mV- 55 C+ 150 C330 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V Enhancement  
NTHS5443T1G


MOSFET -20V -4.9A P-Channel
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ON Semiconductor 2910
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AUD 0.3291
Multiples of: 1

4.9 A20 V56 mOhmsP - Channel  - 55 C+ 150 C1.3 WSmd/SmtCHIP - FET - 8ReelSi1 Channel12 V Enhancement  
RSQ015N06HZGTR


MOSFET NCH 60V 1.5A SMALL SIGNAL MOSF
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ROHM 2910
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AUD 0.3238
Multiples of: 1

1.5 A60 V290 mOhmsN - Channel 2.5 V- 55 C+ 150 C1.25 WSmd/SmtSC - 95 - 6Cut TapeSi1 Channel20 V2 nCEnhancementAec - Q101 
FDC8886


MOSFET 30V N-Channel Power Trench MOSFET
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ON Semiconductor 0
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AUD 0.3076
Multiples of: 3000

6.5 A30 V36 mOhmsN - Channel   + 150 C1.6 WSmd/SmtSUPERSOT - 6ReelSi     Powertrench
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