MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRFR024NT


60V 30A 30W 30mΩ@10V 2.5V@250uA N Channel TO-252-2L MOSFETs ROHS
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HXY MOS 3467
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AUD 0.1672
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AO3415A


SOT-23 MOSFETs ROHS
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TECH PUBLIC 2939
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AUD 0.0544
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IAUCN08S7L013ATMA1


MOSFETs OptiMOS 7 Power-Transistor
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Infineon 2939
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AUD 2.4299
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293 A80 V1.26 mOhmsN - Channel 2 V- 55 C+ 175 C219 WSMD/SMTPG - TDSON - 8Reel , Cut TapeSi1 Channel20 V120 nCEnhancement OptiMOS
SI7114DN-T1-E3


MOSFET 30V 18.3A 3.8W 7.5mohm @ 10V
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Vishay 2937
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AUD 0.8981
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   N - Channel  - 55 C+ 150 C Smd/SmtPOWERPAK 1212 - 8Reel       
FS4805


30V 8.9A 2 P-Channel SOP-8 MOSFETs ROHS
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FOSAN 2934
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AUD 0.1507
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DMP1022UFDEQ-7


MOSFET 12V P-CH MOSFET
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Diodes Incorporated 2934
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AUD 0.4154
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           Cut Tape       
BSP372N H6327


Infineon Technologies MOSFET SMALL SIGNAL N-CH
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Infineon 2933
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AUD 0.3924
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1.8 A100 V153 mOhmsN - Channel 800 mV- 55 C+ 150 C1.8 WSmd/SmtSOT - 223 - 4Reel-1 Channel20 V14.3 nCEnhancement  
DMHC10H170SFJ-13


Diodes Incorporated MOSFET 100V Comp Enh FET 20Vgs w H-Bridge
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Diodes Incorporated 2933
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AUD 0.7634
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2.9 A , 2.3 A100 V111 mOhms , 191 mOhmsN - Channel, P - Channel 1 v , 3 V- 55 C+ 150 C2.1 WSmd/SmtV - DFN5045 - 12ReelSi4 Channel20 V9.7 nC , 17.5 nCEnhancement  
CSD13302W


MOSFET 12-V, N channel NexFET power MOSFET, single WLP 1 mm x 1 mm, 17.1 mOhm 4-DSBGA
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Texas Instruments 2924
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AUD 0.1952
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1.6 A 17.1 mOhmsN - channel     Smd/SmtDSBGA - 4Cut TapeSi1_Channel    Nexfet
IRLML2246PBF-HXY


20V 2.3A 95m 1PCSPChannel SOT-23 MOSFETs ROHS
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HXY MOS 164
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AUD 0.0824
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