MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
FDB390N15A


Fairchild Semiconductor MOSFET 150V NCHAN PwrTrench
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ON Semiconductor 3880
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AUD 1.7365
Multiples of: 800

27 A150 V33.5 mOhmsn - channel  - 55 C+ 175 C75 Wsmd/smtD2PAK - 3Reelsi     powertrench
LP2309LT1G


MOSFET P Trench 60V 1.9A 3V @ 250uA 215 mΩ @ 1.8A,10V SOT-23 (TO-236) RoHS
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Leshan 3106
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AUD 0.0737
Multiples of: 10

                   
HSS2302A


MOSFET N Channel 20V 3.6A 1.2V @ 250uA 50mO @ 3A,4.5V SOT-23-3 RoHS
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HUASHUO 3104
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AUD 0.0141
Multiples of: 50

                   
2N7002KW


SOT-323 MOSFETs ROHS
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TECH PUBLIC 3104
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AUD 0.0156
Multiples of: 50

                   
2N7002T


60V 300mA 1.8Ω@10V,300mA 350mW 1.6V@250uA 2pF@30V N Channel 27pF@30V 1.7nC@4.5V -55℃~+150℃@(Tj) SOT-523 MOSFETs ROHS
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TECH PUBLIC 3104
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AUD 0.0221
Multiples of: 20

                   
G6N02L-B


SOT-23-3L MOSFETs ROHS
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GOFORD 3104
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AUD 0.0251
Multiples of: 10

                   
FDB14AN06LA0_F085


MOSFET 60V N-CHAN PwrTrench
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ON Semiconductor 3104
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AUD 1.9639
Multiples of: 1

67 A60 V12.8 mOhmsn - channel  - 55 C+ 175 C125 Wthrough holeTO - 263ABReelsi1 channel     
IPD075N03LGATMA1


Transistor: N-MOSFET; unipolar; 30V; 35A; 47W; PG-TO252-3
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Infineon 3099
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AUD 0.3981
Multiples of: 1

            Optimos 3      
SQD40P10-40L_GE3


MOSFET -100V -30A 136W AEC-Q101 Qualified
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Vishay 3084
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AUD 1.5135
Multiples of: 1

38 A- 100 V40 mOhmsP - Channel 1 V- 55 C+ 175 C136 WSmd/SmtTO - 252 - 3ReelSi1 Channel- 10 V96 nCEnhancementAec - Q101Trenchfet
RQ5L015SPTL


P-Channel 60 V 1.5A (Ta) 1W (Ta) Surface Mount TSMT3
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ROHM 3084
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AUD 0.1389
Multiples of: 5

1.5 A60 V360 mOhmsP - Channel 1 V- 55 C+ 150 C1 WSmd/SmtSOT - 346 - 3ReelSi1 Channel20 V10 nCEnhancement  
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