MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
ESP10N10


100V 8A 85m@10V,8A 2.7W 1.85V@250uA 1PCSNChannel SOP-8 MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ElecSuper 11036
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AUD 0.1728
Multiples of: 1

                   
QS5U12TR


ROHM Semiconductor MOSFET N-CH 30V 2A TSMT5
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ROHM 2929
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AUD 0.3497
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2 A30 V110 mOhmsN - Channel  - 40 C+ 125 C900 mWSmd/SmtT SMT - 5ReelSi1 Channel12 V Enhancement  
AOD413A


TO-252-3L MOSFETs ROHS
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TECH PUBLIC 2924
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AUD 0.1598
Multiples of: 5

                   
QH8MA4TCR


MOSFET Zener Diode, 100mW, 2 Pin.
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ROHM 2923
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AUD 0.5336
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9 A , 8 A30 v , - 30 V12.3 mOhms , 22 mOhmsN - Channel, P - Channel 1 v , - 2.5 V- 55 C+ 150 C2.6 WSmd/SmtT SMT - 8ReelSi2 Channel+/- 20 v , +/- 20 V15.5 nC , 19.6 nCEnhancement  
DMN4800LSS-13


MOSFET N-CHAN ENHNCMNT MODE
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Diodes Incorporated 2922
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AUD 0.2348
Multiples of: 1

8.6 A30 V20 mOhmsn - channel  - 55 C+ 150 C1.46 Wsmd/smtSOP - 8Reelsi1 channel25 V enhancement  
SK2307A


MOSFET P Trench 16V 4A 1.5V @ 250uA 90 mΩ @ 4A,4.5V SOT-23 (SOT-23-3) RoHS
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Shikues 2919
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AUD 0.0397
Multiples of: 10

                   
FDN338P


MOSFET P Channel 20V 3A 1V @ 250uA 120mO @ 3A,4.5V SOT-23 RoHS
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Shikues 2919
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AUD 0.0459
Multiples of: 10

                   
NCE4606


MOSFET N & P Trench 30V 6.5A,7A 3V @ 250uA 30 mΩ @ 6A,10V SOIC-8_150mil RoHS
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NCE Power 2910
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AUD 0.1144
Multiples of: 5

                   
FDB86563_F085


Fairchild Semiconductor MOSFET
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ON Semiconductor 2146
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AUD 3.2343
Multiples of: 1

110 A60 V3.2 mOhmsN - Channel 2 V- 55 C+ 175 C333 WSmd/SmtTO - 263 - 3ReelSi1 Channel+/- 20 V126 nCEnhancement Powertrench
IPTG011N08NM5ATMA1


MOSFET TRENCH 40<-<100V
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Infineon 1476
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AUD 3.7433
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408 A80 V1.1 mOhmsN - Channel 3.8 V- 55 C+ 175 C375 WSMD/SMTHSOG - 8Cut Tape , ReelSi1 Channel- 20 V , + 20 V178 nCEnhancement  
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