MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BSC030N04NSGATMA1


Transistor: N-MOSFET; unipolar; 40V; 100A; 83W; PG-TDSON-8
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Infineon 3346
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AUD 0.5872
Multiples of: 1

            Optimos 3      
IAUCN04S7L006ATMA1


MOSFETs N
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Infineon 3344
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AUD 1.2658
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380 A40 V600 uOhmsN - Channel 1.5 V- 55 C+ 175 C164 WSMD/SMTTDSON - 8Reel , Cut TapeSi1 Channel- 16 V , + 16 V95 nCEnhancement  
HSS4P06


SOT-23 MOSFETs ROHS
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HUASHUO 3341
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AUD 0.112
Multiples of: 5

                   
MCAC65N06YHE3-TP


MOSFETs
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Micro Commercial Components (MCC) 3341
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AUD 0.8701
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65 A60 V5.2 mOhmsN - Channel 2.5 V- 55 C+ 175 C100 WSMD/SMTDFN - 5060 - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V34.5 nCEnhancement  
NTMFS4C06NAT1G


MOSFET NFET SO8FL 30V 69A 4
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ON Semiconductor 3338
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AUD 0.5
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         Smd/SmtSO - FL - 8Cut TapeSi      
AUIRFS8409


Transistor: N-MOSFET; unipolar; 40V; 195A; 375W; D2PAK
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Infineon 3337
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AUD 4.1511
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195 A40 V1.2 mOhmsN - Channel20 V2.2 V To 3.9 V- 55 C+ 175 C375 WSmd/SmtD2PAK - 2TubeSi1 Channel20 V300 nCEnhancementAec - Q101Coolirfet
SI2302DS-T1-GE3-ES


20V 3.5A 350mW 36m@10V,3.5A 1V@250uA 1PCSNChannel SOT-23 MOSFETs ROHS
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ElecSuper 3336
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AUD 0.0159
Multiples of: 20

                   
IRLML6401


SOT-23 MOSFETs ROHS
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Bourne 3336
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AUD 0.0492
Multiples of: 10

                   
AO4606


30V 8A 18mO@10V,8A 1PCSN-Channel&1PCSP-Channel SOP-8 MOSFETs ROHS
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VBsemi Elec 3335
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AUD 0.3265
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VBE1405


MOSFET N Trench 40V 85A 2.5V @ 250uA 7.5 mΩ @ 20A,4.5V TO-252 RoHS
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VBsemi Elec 524
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AUD 0.6393
Multiples of: 1

                   
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