MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
APM4953KC-TRG


MOSFET P Trench 30V 4.9A 2V @ 250uA 60 mΩ @ 4.9A,10V SOP-8_150mil RoHS
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Anpec 3724
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AUD 0.2655
Multiples of: 5

                   
SI9430DY-T1-E3-VB


20V 13A 15mΩ@4.5V P Channel SO-8 MOSFETs ROHS
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VBsemi Elec 3724
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AUD 0.3144
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SH8MA4TB1


MOSFET 30V NCH+PCH POWER
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ROHM 3724
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AUD 0.7333
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9 A , 8.5 A30 V21 mOhms , 29.6 mOhmsN - Channel, P - Channel 1 V- 55 C+ 150 C3 WSmd/SmtSOP - 8Cut TapeSi2 Channel20 V15.5 nC , 19.6 nCEnhancement  
IPB180P04P4L02ATMA1


Infineon Technologies MOSFET P-Ch -40V -180A D2PAK-6 OptiMOS-P2
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Infineon 3722
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AUD 2.6889
Multiples of: 1

180 A40 V2.4 mOhmsP - Channel 1.2 V- 55 C+ 175 C150 WSmd/SmtTO - 263 - 7ReelSi1 Channel- 10 V286 nCEnhancementAec - Q101 
IRF9620SPBF


MOSFET P-Chan 200V 3.5 Amp
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Vishay 3721
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AUD 1.4143
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   P - Channel  - 55 C+ 150 C Smd/SmtD2PAKTubeSi      
IRFHM9331TRPBF


MOSFET P Trench 30V 11A 2.4V @ 25uA 10 mΩ @ 11A,20V PQFN 3x3 RoHS
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Infineon 3720
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AUD 0.3684
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11 A30 V11.7 mOhmsP - Channel 1.8 V- 55 C+ 150 C2.8 WSmd/SmtPQFN - 8ReelSi1 Channel25 V16 nCEnhancement  
BSP129 H6327


Infineon Technologies MOSFET N-Ch 240V 350mA SOT-223-3
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Infineon 3718
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AUD 0.3562
Multiples of: 1

50 mA240 V6 OhmsN - Channel - 1.4 V- 55 C+ 150 C1.8 WSmd/SmtPG - SOT223Reel-1 Channel+/- 20 V3.8 nCDepletion  
AO4606A


30V 8A 18mO@10V,8A 1PCSN-Channel&1PCSP-Channel SOP-8 MOSFETs ROHS
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VBsemi Elec 3718
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AUD 0.3755
Multiples of: 1

                   
MCACD60N06YHE3-TP


MOSFETs N-CHANNEL MOSFET,PDFN5060-8D
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Micro Commercial Components (MCC) 3718
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AUD 1.7984
Multiples of: 1

60 A60 V6.5 mOhmsN - Channel 2.5 V- 55 C+ 175 C50 WSMD/SMTPDFN5060 - 8Reel , Cut TapeSi2 Channel- 20 V , + 20 V34.5 nCEnhancement  
FDD86110


MOSFET 100V N-Channel PowerTrench MOSFET
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ON Semiconductor 3633
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AUD 2.2349
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12.5 A100 V10.2 mOhmsN - Channel  - 55 C+ 150 C3.1 WThrough HoleTO - 252ReelSi1 Channel20 V25 nCEnhancement Powertrench
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