MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
DMC3021LSD-13


Mosfet Array N and P-Channel 30V 8.5A, 7A 2.5W Surface Mount 8-SO
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Diodes Incorporated 9737
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AUD 0.3143
Multiples of: 1

8.5 A , 7 A30 V21 mOhms , 39 mOhmsN - Channel, P - Channel 1 V- 55 C+ 150 C2.5 WSmd/SmtSOIC - 8Cut TapeSi2 Channel10 V7.8 nC , 21.1 nCEnhancement  
AUIRF7309QTR


International Rectifier MOSFET AUTO 30V 1 N-CH HEXFET 50mOhms
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Infineon 3733
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AUD 1.9375
Multiples of: 1

4 A30 V80 mOhmsN - Channel, P - Channel    1.4 WSmd/SmtSOIC - 8ReelSi2 Channel20 V16.7 nC Aec - Q101 
AO8814


MOSFET 2 N Channel（Double）Common Drain 20V 7.5A 1V @ 250uA 16 mΩ @ 7.5A,10V TSSOP-8 RoHS
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Alpha & Omega 3730
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AUD 0.4744
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7.5 A  N    1.5 WSurface Mount      Enhancement  
BSC035N04LS G


Infineon Technologies MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3
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Infineon 3729
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AUD 0.5902
Multiples of: 1

21 A40 V3.5 mOhmsN - Channel20 V2 V- 55 C+ 150 C2.5 WSmd/SmtTDSON - 8ReelSi1 Channel20 V64 nCEnhancement Optimos
AP0803QD


30V 20A 9mΩ@10V,10A 20W 2 N-Channel PMPAK(3x3) MOSFETs ROHS
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Quan Li 3727
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AUD 0.3595
Multiples of: 5

                   
ZVN3310ASTZ


Diodes Incorporated MOSFET N-Chnl 100V
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Diodes Incorporated 3727
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AUD 0.447
Multiples of: 1

200 mA100 V10 OhmsN - Channel  - 55 C+ 150 C625 mWThrough HoleTO - 92 - 3BulkSi1 Channel20 V Enhancement  
BSS138


SOT-23 MOSFETs ROHS
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FUXINSEMI 3724
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AUD 0.0137
Multiples of: 20

                   
LP137N3T5G


null 0.9A P Channel SOT-883-3 MOSFETs ROHS
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Leshan 3724
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AUD 0.0259
Multiples of: 20

                   
NTD24N06LT4G(UMW)


TO-252 MOSFETs ROHS
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Youtai 3724
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AUD 0.1344
Multiples of: 5

                   
AON7534


MOSFET N Trench 30V 20A 2.2V @ 250uA 5 mΩ @ 20A,10V DFN 3x3 RoHS
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Alpha & Omega 2303
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AUD 0.1755
Multiples of: 5

                   
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