MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRFH4255DTRPBF


International Rectifier MOSFET 25V Single N-Ch HEXFET PWR 50A
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Infineon 3334
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AUD 2.2069
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30 A , 30 A25 V , 25 V4.6 mOhms , 2.1 mOhmsN - Channel 1.1 V , 1.1 V- 55 C+ 150 C31 w , 38 WSmd/SmtPQFN - 8Cut TapeSi2 Channel20 V , 20 V10 nC , 23 nCEnhancement Fastirfet
NTMFS5C468NLT1G


MOSFET T6 40V NCH LL IN SO8
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ON Semiconductor 3332
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AUD 0.2414
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37 A40 V17.6 mOhmsN - Channel 1.2 V- 55 C+ 175 C28 WSmd/SmtDFN - 5ReelSi1 Channel+/- 20 V7.3 nCEnhancement  
DN2625K4-G


Transistor: N-MOSFET; unipolar; 250V; 1.1A; 2.5W; TO252
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Microchip 3330
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AUD 1.9045
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Hot IRFB4127PBF


MOSFET N Trench 200V 76A (Tc) 5V @ 250uA 20 mΩ @ 44A,10V TO-220AB RoHS
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Infineon 3329
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AUD 0.9093
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   N - Channel  - 55 C+ 175 C Through HoleTO - 220 - 3Tube       
KCY3406A


DFN(5x6) MOSFETs ROHS
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KIA 3328
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AUD 0.2442
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AO3402


SOT-23 MOSFETs ROHS
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Bourne 3327
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AUD 0.0439
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SED4060GM


MOSFET N Trench 40V 60A 2.2V @ 250uA 9.5 mΩ @ 20A,10V DFN 3x3 RoHS
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SINO-IC 3327
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AUD 0.2839
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BSC0910NDIATMA1


Transistor: N-MOSFET; unipolar; 25V; 40A; 2.5W; PG-TISON-8
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Infineon 3327
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AUD 1.2379
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            Optimos      
IRFH9310TRPBF


P-Channel 30 V 21A (Ta), 40A (Tc) 3.1W (Ta) Surface Mount PQFN (5x6)
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Infineon 3327
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AUD 1.9015
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21 A30 V4.6 mOhmsP - Channel    3.1 WSmd/SmtPQFN - 8ReelSi1 Channel20 V165 nC   
MIC94052YC6-TR


MOSFET P Trench 6V 2A 1.2V @ 250uA 84 mΩ @ 100mA,4.5V SC-70-6 (SOT-363) RoHS
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Microchip 3325
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AUD 1.031
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2 A- 6 V70 mOhmsP - Channel1.8 V- 0.5 V- 40 C+ 150 C270 WSmd/SmtSC - 70 - 6ReelSi 1.8 V Enhancement  
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