MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
TPAO6800


SOT-23-6 MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

TECH PUBLIC 3331
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AUD 0.0725
Multiples of: 5

                   
FQP27P06


Transistor: P-MOSFET; unipolar; -60V; -27A; TO220AB
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ON Semiconductor 3298
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AUD 1.6026
Multiples of: 50

            Qfet®      
DN2625DK6-G


Transistor: N-MOSFET; unipolar; 250V; 1.1A; DFN8
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Microchip 3298
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AUD 4.1791
Multiples of: 1

                   
IRL1404PBF


International Rectifier MOSFET 40V 1 N-CH HEXFET 4mOhms 93.3nC
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Infineon 3297
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AUD 1.9375
Multiples of: 1

160 A40 V5.9 mOhmsN - Channel20 V3 V- 55 C+ 175 C200 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V140 nCEnhancement  
RS3400E


30V 5.8A 35mΩ@10V,5.8A 350mW null SOT-23 MOSFETs ROHS
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REASUNOS 3278
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AUD 0.0359
Multiples of: 10

                   
SDM9435AQ


30V 5.1A 31m@10V,5A 1.4W 1.8V@250uA SOP-8 MOSFETs ROHS
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SINEDEVICE 3220
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AUD 0.1009
Multiples of: 5

                   
SIR638DP-T1-GE3


MOSFET 40V Vds 20V Vgs PowerPAK SO-8
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Vishay 3104
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AUD 1.8854
Multiples of: 1

100 A40 V880 uOhmsN - Channel 2.3 V- 55 C+ 150 C104 WSMD/SMTPOWERPAK - SO - 8Reel , Cut TapeSi1 Channel- 16 V , 20 V204 nCEnhancement TrenchFET, PowerPAK
2N7000-TA


60V 0.2A 0.625W 5mΩ@10V,500mA 3V@1mA 5pF@25V N Channel 60pF@25V -55℃~+150℃@(Tj) TO-92 MOSFETs ROHS
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Changjing Electronics Technology 2910
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AUD 0.0506
Multiples of: 20

                   
YJL2101W


20V 2A 100mΩ@4.5V,1.5A 450mW P Channel SOT-323-3 MOSFETs ROHS
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Yangjie 2211
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AUD 0.0421
Multiples of: 20

                   
LP2305LT1G


MOSFET P Trench 30V 4.2A 1.3V @ 250uA 70 mΩ @ 4.2A,10V SOT-23 (SOT-23-3) RoHS
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Leshan 1920
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AUD 0.0606
Multiples of: 10

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