MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
ASDM30N90Q-R


DFN5x6-8 MOSFETs ROHS
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Ascend 3710
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AUD 0.1697
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CJAB25N04S


40V 25A 7.5mΩ@10V 2.5V N Channel PDFNWB-8L(3.3x3.3) MOSFETs ROHS
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Changjing Electronics Technology 3710
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AUD 0.1861
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FDC5614P


SOT-23-6 MOSFETs ROHS
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JSMSEMI 3710
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AUD 0.2177
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SI9407BDY-E3


Transistor: P-MOSFET; unipolar; -60V; -4A; 5W; SO8
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Vishay 3710
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AUD 0.8533
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AP3020


MOSFET 2 N Channel (Dual) 30V 11.8A 3V @ 250uA 11.5 mΩ @ 11A,10V SO-8 RoHS
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Quan Li 3709
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AUD 0.2152
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IRF520PBF-BE3


MOSFET 100V N-CH
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Vishay 3709
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AUD 0.99
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9.2 A100 V270 mOhmsN - Channel 4 V- 55 C+ 175 C60 WThrough HoleTO - 220AB - 3TubeSi1 Channel- 20 V , + 20 V16 nCEnhancement  
IPD040N03LF2SATMA1


MOSFETs Addresses a broad range of applications from low- to high-switching frequency
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Infineon 3708
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AUD 0.529
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73 A30 V4.05 mOhmsN - Channel 2.35 V- 55 C+ 175 C75 WSMD/SMTTO - 252 - 3Reel , Cut TapeSi1 Channel- 20 V , + 20 V13 nCEnhancement StrongIRFET
FDP047N08


MOSFET 75V N-Channel PowerTrench
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ON Semiconductor 3707
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AUD 2.654
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164 A75 V4.7 mOhmsN - Channel  - 55 C+ 175 C268 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V Enhancement Powertrench
DI7A6N04SQ2


MOSFETs MOSFET, SO-8, 40V, 7.6A, 150C, N
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Diotec 3706
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AUD 0.2183
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7.6 A40 V28 mOhmsN - Channel 1.6 V- 55 C+ 150 C3.1 WSMD/SMTSO - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V18 nCEnhancement  
BSC123N08NS3GATMA1


Transistor: N-MOSFET; unipolar; 80V; 55A; 66W; PG-TDSON-8
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Infineon 3263
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AUD 0.7178
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