MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SI7145DP-T1-GE3


Vishay Semiconductors MOSFET -30V 2.6mOhm10V 60A P-Ch G-III
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Vishay 3401
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AUD 1.9811
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- 60 A- 30 V2.6 mOhmsP - Channel20 V - 55 C+ 150 C104 WSmd/SmtSO - 8Reel   129 nCEnhancement  
FDN352AP


SOT-23 MOSFETs ROHS
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Youtai 3399
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AUD 0.0334
Multiples of: 10

                   
RQ5E025SNTL


MOSFET NCH 30V 2.5A SMALL SIGNAL
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ROHM 3399
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AUD 0.2496
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2.5 A30 V70 mOhmsN - Channel 1 V- 55 C+ 150 C1 WSmd/SmtSOT - 346T - 3Cut TapeSi1 Channel20 V2.9 nCEnhancement  
IPD90N04S4-04


Infineon Technologies MOSFET N-Ch 40V 90A DPAK-2 OptiMOS-T2
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Infineon 3399
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AUD 0.6025
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90 A40 V4.1 mOhmsN - Channel 4 V- 55 C+ 175 C71 WSmd/SmtDPAK - 3ReelSi1 Channel20 V33 nCEnhancementAec - Q101Optimos
HUF75329D3ST


MOSFET 20a 55V N-Channel UltraFET
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ON Semiconductor 3399
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AUD 0.6616
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20 A55 V26 mOhmsN - Channel  - 55 C+ 175 C128 WSmd/SmtTO - 252AAReelSi1 Channel20 V Enhancement  
ISC030N12NM6ATMA1


MOSFETs N
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Infineon 3396
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AUD 4.4862
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194 A120 V3.7 mOhmsN - Channel 3.6 V- 55 C+ 175 C250 WSMD/SMTTSON - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V59 nCEnhancement OptiMOS
FDV303N


SOT-23 MOSFETs ROHS
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TECH PUBLIC 3395
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AUD 0.0314
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50N03DF


30V 50A 7m@10V,12A 18W 2.5V@250uA 1PCSNChannel PDFN-8(3x3) MOSFETs ROHS
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GOODWORK 3395
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AUD 0.1416
Multiples of: 5

                   
SI9430DY-T1-E3-VB


20V 13A 15mΩ@4.5V P Channel SO-8 MOSFETs ROHS
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VBsemi Elec 3395
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AUD 0.328
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RQ3L270BLFRATCB


MOSFETs Nch 60V 27A, HSMT8AG, Power MOSFET for Automotive
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ROHM 3395
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AUD 0.9465
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27 A60 V14.7 mOhmsN - Channel 4 V- 55 C+ 150 C69 WSMD/SMTH SMT - 8AGReel , Cut TapeSi1 Channel- 20 V , + 20 V15 nCEnhancement  
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