MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
ASDM4100S-R


SOP-8 MOSFETs ROHS
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Ascend 3685
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AUD 0.253
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MS10N10


100V 12A 115Ω@10V 347W N Channel TO-252 MOSFETs ROHS
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MSKSEMI 3685
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AUD 0.2985
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BSC0901NSIXT


MOSFET OptiMOS Power MOSFET
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Infineon 3684
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AUD 0.951
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100 A30 V1.7 mOhmsN - Channel 1 V- 55 C+ 150 C69 WSmd/SmtTDSON - 8ReelSi1 Channel20 V41 nCEnhancement Optimos
DMTH10H025SK3-13


MOSFET MOSFET BVDSS: 61V~100V TO252 T&R 2.5K
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Diodes Incorporated 3683
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AUD 0.4436
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46.3 A100 V23 mOhmsN - Channel 2 V- 55 C+ 175 C3.7 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel20 V21.4 nCEnhancement  
BSC025N03MSGATMA1


Transistor: N-MOSFET; unipolar; 30V; 23A; 83W; PG-TDSON-8
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Infineon 3682
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AUD 0.3996
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            Optimos 3      
PSMN017-30PL,127


MOSFET N-chan 30 V 17 mohm MOSFET in TO-220
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Nexperia 3681
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AUD 2.4802
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32 A30 V17 mOhmsN - Channel    45 WThrough HoleTO - 220TubeSi1 Channel     
NCEP1545K


MOSFET TO-252 RoHS
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NCE Power 3678
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AUD 0.5996
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WST2088A


SOT-23-3L MOSFETs ROHS
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Winsok 3676
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AUD 0.1028
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IRFR3910TRPBF


MOSFET N Trench 100V 16A 4V @ 250uA 115 mΩ @ 10A,10V TO-252-2 (DPAK) RoHS
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Infineon 3666
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AUD 0.4631
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   N - Channel  - 55 C+ 175 C Smd/SmtDPAKReel       
DMG6601LVT-7


MOSFET 30V Comp ENH Mode 25 to 30V MosFET
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Diodes Incorporated 3472
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AUD 0.1035
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3.8 A , 2.5 A30 V55 mOhms , 110 mOhmsN - Channel, P - Channel 500 mV , 400 mV- 55 C+ 150 C1.3 WSmd/SmtTSOT - 26 - 6Cut TapeSi2 Channel10 V12.3 nC , 13.8 nCEnhancement  
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