MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
Hot DMP2130LDM-7


P-Channel 20 V 3.4A (Ta) 1.25W Surface Mount SOT-26
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Diodes Incorporated 29483
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AUD 0.1205
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3.4 A20 V80 mOhmsP - Channel  - 55 C+ 150 C1.25 WSmd/SmtSOT - 26 - 6Cut TapeSi1 Channel12 V Enhancement  
TPZXMP3A17E6TA


SOT-23-6 MOSFETs ROHS
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TECH PUBLIC 3302
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AUD 0.1142
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TPN11003NL,LQ


MOSFET N-Ch DTMOS VII-H 19W 510pF 31A 30V
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Toshiba 3289
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AUD 0.3891
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31 A30 V12.6 mOhmsN - Channel20 V2.3 V- 55 C+ 150 C19 WSmd/SmtTSON - 8ReelSi1 Channel20 V7.5 nCEnhancement  
BSP320S H6327


Infineon Technologies MOSFET N-Ch 60V 2.9A SOT-223-3
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Infineon 3287
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AUD 0.4563
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2.9 A60 V120 mOhmsN - Channel 2.1 V- 55 C+ 150 C1.8 WSmd/SmtSOT - 223 - 4ReelSi1 Channel20 V9.7 nCEnhancement  
TSM4NB60CI C0G


MOSFET 600V, 4A, Single N-Channel Power MOSFET
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Taiwan Semiconductor 3287
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AUD 2.1154
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4 A600 V2.2 OhmsN - Channel 2.5 V- 55 C+ 150 C25 WThrough HoleI TO - 220 - 3Cut TapeSi1 Channel10 V14.5 nCEnhancement  
ECH8420-TL-H


MOSFET NCH 1.8V DRIVE SERIES
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ON Semiconductor 3286
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AUD 0.5812
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14 A20 V6.8 mOhmsN - Channel    1.6 WSmd/SmtECH - 8ReelSi      
RSF014N03TL


MOSFET N-CH 30V 1.4A TUMT3
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ROHM 3285
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AUD 0.2369
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1.4 A30 V270 mOhmsN - Channel    800 mWSmd/SmtTUMT - 3ReelSi1 Channel20 V Enhancement  
MS9435


30V 5.3A 50mΩ@10V,5.3A 2.5W 3V@250uA 77pF@15V P Channel 690pF@15V 14nC@15V +150℃@(Tj) SOP-8 MOSFETs ROHS
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MSKSEMI 3249
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AUD 0.0461
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RJK03M5DNS-00#J5


MOSFET BEAM2 Series FET, 30V, HWSON3030-8
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Renesas 3248
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AUD 0.7766
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25 A30 V6.3 mOhmsN - Channel  - 55 C+ 150 C15 WSMD/SMTHWSON - 8Reel , Cut TapeSi1 Channel- 20 V , 20 V10.4 nCEnhancement  
PSMN7R6-60BS,118


MOSFET N-CH 60 V 7.8 MOHM MOSFET
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Nexperia 89
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AUD 1.1837
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92 A54 V7.8 mOhmsN - Channel    149 WThrough HoleD2PAKReelSi1 Channel5.6 V    
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