MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NTD14N03RT4G


MOSFET 25V 14A N-Channel
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ON Semiconductor 3418
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AUD 0.3842
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   N - Channel  - 55 C+ 150 C Smd/SmtDPAKReel       
ASDM100R045NQ-R


100V 90A 60W 3.7mΩ@10V,20A 3V@250uA 13.2pF@40V N Channel 2890pF@40V 23nC@10V -55℃~+150℃@(Tj) PDFN5x6-8 MOSFETs ROHS
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Ascend 3416
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AUD 0.573
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2N7002KQ-13


Transistor: N-MOSFET; unipolar; 60V; 0.31A; 0.37W; SOT23
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Diodes Incorporated 3414
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AUD 0.0302
Multiples of: 10

                   
PJA3401-AU_R1_000A1


MOSFETs 30V P-Channel Enhancement Mode MOSFET, -30 V, -3.6 A
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Panjit 3414
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AUD 0.0804
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3.6 A30 V115 mOhmsP - Channel 1.3 V- 55 C+ 150 C1.25 WSMD/SMTSOT - 23 - 3Reel , Cut TapeSi1 Channel20 V15 nCEnhancementAEC - Q101 
YJS2022A


Transistor: P-MOSFET; TRENCH POWER MV; unipolar; 20V; -10.4A; 3W
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Yangjie 3414
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AUD 0.1584
Multiples of: 5

            TRENCH POWER MV      
NTP2955G


MOSFET -60V -12A P-Channel
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ON Semiconductor 3413
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AUD 0.5352
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2.4 A60 V196 mOhmsP - Channel 2 V- 55 C+ 175 C62.5 WThrough HoleTO - 220 - 3TubeSi1 Channel- 10 V14 nCEnhancement  
TPN5900CNH,L1Q


MOSFET UMOSVIII 150V 59mOhm VGS=10V TSON-ADV
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Toshiba 3413
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AUD 0.7352
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18 A150 V50 mOhmsN - Channel 4 V- 55 C+ 150 C39 WSmd/SmtTSON - ADVANCE - 8Cut TapeSi1 Channel20 V7 nCEnhancement U - Mosviii - H
SIDR626LDP-T1-RE3


MOSFET 60V N-CHANNEL MOSFET
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Vishay 3413
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AUD 2.3082
Multiples of: 1

204 A60 V1.2 mOhmsN - Channel 2.5 V- 55 C+ 155 C125 WSMD/SMTPOWERPAK - SO - 8Cut Tape , ReelSi1 Channel- 20 V , + 20 V89 nCEnhancement TrenchFET
ECH8420-TL-H


MOSFET NCH 1.8V DRIVE SERIES
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ON Semiconductor 3412
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AUD 0.4991
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14 A20 V6.8 mOhmsN - Channel    1.6 WSmd/SmtECH - 8ReelSi      
WSD30L60DN56


MOSFET P Trench 30V 15A 2.5V @ 250uA 17 mΩ @ 10A,6V DFN5x6-8 RoHS
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Winsok 3411
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AUD 0.2222
Multiples of: 1

                   
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