MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRFH8334TRPBF


N-Channel 30 V 14A (Ta), 44A (Tc) 3.2W (Ta), 30W (Tc) Surface Mount PQFN (5x6)
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Infineon 3410
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AUD 0.2492
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25 A30 V13.5 mOhmsN - Channel    30 WSmd/SmtPQFN - 8ReelSi1 Channel20 V7.1 nC   
TPH2R70AR5,LQ


MOSFETs N-ch MOSFET, 100 V, 0.0027 Ohma.10V, SOP Advance(N), U-MOS11-H
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Toshiba 3410
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AUD 1.1722
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190 A100 V2.7 mOhmsN - Channel 4.3 V + 175 C210 WSMD/SMTSOP - 8Reel , Cut TapeSi1 Channel20 V52 nCEnhancement  
IRLR2905ZTRPBF


Transistor: N-MOSFET; unipolar; 55V; 60A; 110W; DPAK
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Infineon 3407
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AUD 0.5618
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60 A55 V13.5 mOhmsN - Channel 3 V- 55 C+ 175 C110 WSmd/SmtDPAKReelSi1 Channel16 V23 nCEnhancement  
DMP2100UFU-7


MOSFET Dual P-Ch Enh FET 20Vdss 10Vgss 0.9W
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Diodes Incorporated 3406
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AUD 0.2627
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5.7 A20 V25 mOhms , 25 mOhmsP - Channel 1.4 V- 55 C+ 150 C1.9 WSmd/SmtU - DFN2030 - 6Cut TapeSi2 Channel10 V21.4 nC , 21.4 nCEnhancement  
TNM03K100KX


100V 2A 240m 1PCSNChannel SOT-23 MOSFETs ROHS
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Shenzhen JingYang 3404
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AUD 0.0723
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PJA3460


60V 2.5A 55mΩ@10V,2A 1.25W 1.75V@250uA N Channel SOT-23 MOSFETs ROHS
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Panjit 3404
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AUD 0.1107
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IPL60R385CPAUMA1


Transistor: N-MOSFET; unipolar; 600V; 9A; 83W; PG-VSON-4
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Infineon 3404
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AUD 1.6483
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            Coolmos Cp      
RU1C001ZPTL


MOSFET 1.2V Drive Pch MOSFET
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ROHM 3403
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AUD 0.046
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100 mA20 V2.5 OhmsP - Channel 1 V- 55 C+ 150 C150 mWSmd/SmtSOT - 323FL - 3Tape And ReelSi1 Channel10 V Enhancement  
RQ5E050ATTCL


MOSFET PCH -30V -5A SMALL SIGNAL
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ROHM 3403
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AUD 0.3513
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5 A30 V26 mOhmsP - Channel 1 V- 55 C+ 150 C1 WSmd/SmtSOT - 346T - 3Cut TapeSi1 Channel20 V19.4 nCEnhancement  
ISCH69N04NM7VATMA1


MOSFETs OptiMOS 7 Power-Transistor, 40 V
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Infineon 3402
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AUD 1.4316
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357 A40 V650 uOhmsN - Channel 3.15 V- 55 C+ 175 C167 WSMD/SMTTDSON - 8Reel , Cut TapeSi1 Channel20 V85 nCEnhancement OptiMOS
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