MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Id - Continuous Drain Current
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
DMPH6050SK3-TP


60V 16A 52m@10V,6A 20W 1V@250uA TO-252 MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

TECH PUBLIC 3346
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AUD 0.4616
Multiples of: 5

                   
IQE004NE1LM7SCATMA1


MOSFETs N
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Infineon 3346
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AUD 1.5318
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58 A15 V570 uOhmsN - Channel 1.6 V- 55 C+ 150 C89 WSMD/SMTWHSON - 8Reel , Cut TapeSi1 Channel- 7 V , + 7 V29 nCEnhancement  
AOI4286


N-Channel 100 V 4A (Ta), 14A (Tc) 2.5W (Ta), 30W (Tc) Through Hole TO-251A
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Alpha & Omega 3340
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AUD 0.441
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           -       
NTMFS4C06NAT1G


MOSFET NFET SO8FL 30V 69A 4
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ON Semiconductor 3338
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AUD 0.5
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         Smd/SmtSO - FL - 8Cut TapeSi      
NDT014


MOSFET N-Channel FET Enhancement Mode
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ON Semiconductor 3337
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AUD 0.6519
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2.7 A60 V200 mOhmsN - Channel  - 65 C+ 150 C3 WSmd/SmtSOT - 223ReelSi1 Channel20 V Enhancement  
DMTH45M5LPSWQ-13


MOSFETs MOSFET BVDSS: 31V-40V PowerDI5060-8/SWP T&R 2.5K
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Diodes Incorporated 3334
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AUD 0.5418
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           Reel , Cut TapeSi      
IAUMN08S5N013GAUMA1


MOSFETs MOSFET_(75V 120V(
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Infineon 3331
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AUD 3.5463
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350 A80 V1.3 mOhmsN - Channel 3.8 V- 55 C+ 175 C307 WSMD/SMTPG - HSOG - 4 - 1Reel , Cut TapeSi1 Channel- 20 V , + 20 V138 nCEnhancement  
SQ2364EES-T1_GE3


MOSFET 60V Vds; +/-8V Vgs SOT-23; 4A Id
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Vishay 3183
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AUD 0.7815
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2 A60 V240 mOhmsN - Channel 460 mV- 55 C+ 175 C3 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel8 V2.5 nCEnhancement  
NTD5867NLT4G(UMW)


TO-252 MOSFETs ROHS
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Youtai 3181
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AUD 0.1551
Multiples of: 5

                   
TK10P60W,RVQ(S


DPAK MOSFETs ROHS
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Toshiba 3166
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AUD 0.9815
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