MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRF7313TRPBF


MOSFET 2 N Channel (Dual) 30V 6.5A 1V @ 250uA 29 mΩ @ 5.8A,10V SOIC-8_150mil RoHS
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Infineon 3841
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AUD 0.4204
Multiples of: 1

6.5 A30 V29 mOhmsN - Channel 1 V- 55 C+ 150 C2 WSmd/SmtSOIC - 8ReelSi2 Channel20 V22 nCEnhancement  
SI4178DY-T1-GE3


MOSFET 30V Vds 25V Vgs SO-8
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Vishay 3773
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AUD 0.1875
Multiples of: 5

12 A30 V21 mOhmsN - Channel 1.4 V- 55 C+ 150 C5 WSmd/SmtSO - 8Cut TapeSi1 Channel10 V7.5 nCEnhancement Trenchfet
RUQ050N02HZGTR


MOSFET NCH 20V 5A SMALL SIGNAL MOSFET
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ROHM 3768
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AUD 0.4972
Multiples of: 1

5 A20 V30 mOhmsN - Channel 1 V- 55 C+ 150 C1.25 WSmd/SmtSC - 95 - 6Cut TapeSi1 Channel10 V12 nCEnhancementAec - Q101 
YFW30N06AD


60V 30A 35W 18mΩ@10V,25A 2.5V@250μA null TO-252-2 MOSFETs ROHS
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YFW Electronics 3767
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AUD 0.1616
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IRFR1N60ATRPBF-BE3


N-Channel 600V 1.4A (Tc) 36W (Tc) Surface Mount D-PAK (TO-252AA)
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Vishay 3767
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AUD 1.2018
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1.4 A600 V7 OhmsN - Channel 4 V- 55 C+ 150 C36 WSMD/SMTTO - 252 - 3Reel , Cut TapeSi1 Channel- 30 V , + 30 V14 nCEnhancement  
CJAC1R3SN04C


PDFNWB-8L(5x6) MOSFETs ROHS
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Changjing Electronics Technology 3764
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AUD 0.6131
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2N7002KQ-7-ES


60V 300mA 1.5@10V,500mA 200mW 1.5V@250uA 1PCSNChannel SOT-23 MOSFETs ROHS
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ElecSuper 3763
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AUD 0.0116
Multiples of: 20

                   
AP040N03G


MOSFET N Channel 30V 80A(Tc) 3V @ 250uA 4.2mO @ 30A,10V DFN5*6 RoHS
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Quan Li 3763
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AUD 0.5209
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DMT2004UFDF-7


MOSFET MOSFET BVDSS: 8V-24V
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Diodes Incorporated 3761
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AUD 0.3667
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14.1 A24 V4.8 mOhmsN - Channel 550 mV- 55 C+ 150 C12.5 WSmd/SmtU - DFN2020 - F - 6Cut TapeSi1 Channel12 V53.7 nCEnhancement  
IRFH5302TRPBF


MOSFET N Trench 30V 32A 2.35V @ 100uA 2.1 mΩ @ 50A,10V PQFN 5x6 RoHS
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Infineon 3750
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AUD 0.5779
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100 A30 V2.1 mOhmsN - Channel    100 WSmd/SmtPQFN - 8ReelSi1 Channel20 V29 nC   
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