MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
HSBB02P15


150V 2A 640mΩ@10V,1A 7.7W 3V@250uA 23pF@75V P Channel 400pF@75V 4.5nC@10V -55℃~+150℃@(Tj) PRPAK3x3 MOSFETs ROHS
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HUASHUO 3307
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AUD 0.211
Multiples of: 5

                   
DMPH6050SPDQ-13


MOSFET MOSFET BVDSS: 41V-60V
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Diodes Incorporated 3307
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AUD 0.8324
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           Cut Tape       
FDMC86244


MOSFET 150V N-Channel PowerTrench MOSFET
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ON Semiconductor 3307
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AUD 0.9009
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15 A150 V134 mOhmsn - channel   + 150 C26 Wsmd/smtMLP 3.3 x 3.3Reelsi1 channel 2.4 nC , 4.2 nC  powertrench
IPD60R400CE


600V 14.7A 400mO@10V,3.8A 112W N Channel TO-252-3 MOSFETs ROHS
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Infineon 3306
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AUD 0.7199
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BSZ097N10NS5ATMA1


Infineon Technologies MOSFET N-Ch 100V 40A TSDSON-8
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Infineon 3305
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AUD 0.949
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40 A100 V13 mOhmsN - Channel 2.2 V- 55 C+ 150 C69 WSmd/SmtTSDSON - 8ReelSi1 Channel+/- 20 V22 nCEnhancement Optimos
NX3008PBKS.115


Transistor: P-MOSFET; unipolar; -30V; -200mA; 80mW; SOT363
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Nexperia 3303
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AUD 0.2758
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BSC018NE2LSIATMA1


Transistor: N-MOSFET; unipolar; 25V; 29A; 69W; PG-TDSON-8
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Infineon 3303
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AUD 0.8201
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            Optimos      
BSZ034N04LS


Infineon Technologies MOSFET
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Infineon 3302
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AUD 0.5878
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40 A40 V2.7 mOhmsN - Channel 1.2 V- 55 C+ 150 C52 WSmd/SmtTSDSON - 8ReelSi1 Channel20 V35 nCEnhancement Optimos
RUL035N02FRATR


MOSFET Nch 20V Vds 3.5A 0.066Rds(on) 5.7Qg
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ROHM 3261
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AUD 0.2299
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3.5 A20 V31 mOhmsN - Channel 300 mV + 150 C1 WSmd/SmtTUMT - 6Cut TapeSi1 Channel4.5 V5.7 nCEnhancementAec - Q101 
WM02DN70A


Transistor: N-MOSFET x2; unipolar; TSSOP8; common drain; ESD
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Wayon 2803
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AUD 0.2299
Multiples of: 1

                   
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