MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
RU1C001ZPTL


MOSFET 1.2V Drive Pch MOSFET
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ROHM 6091
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AUD 0.0474
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100 mA20 V2.5 OhmsP - Channel 1 V- 55 C+ 150 C150 mWSmd/SmtSOT - 323FL - 3Tape And ReelSi1 Channel10 V Enhancement  
Hot RQ3E130MNTB1


MOSFET N Trench 30V 13A 2.5V @ 1mA 8.1 mΩ @ 13A,10V HSMT8 RoHS
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ROHM 3366
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AUD 0.3599
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         Smd/SmtH SMT - 8ReelSi      
SP30P08P8


SOP-8L MOSFETs ROHS
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Siliup 3351
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AUD 0.1414
Multiples of: 5

                   
FDMC7672


MOSFET N-Chan 30/20V PowerTrench
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ON Semiconductor 3348
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AUD 0.6879
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16.9 A30 V5.5 mOhmsN - Channel  - 55 C+ 150 C2.3 WSmd/SmtMLPReelSi1 Channel20 V Enhancement  
RQ7E055ATTCR


MOSFET Pch -30V -5.5A Si MOSFET
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ROHM 3348
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AUD 0.7495
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5.5 A30 V19.3 mOhmsP - Channel 2.5 V- 55 C+ 150 C1.5 WSmd/SmtT SMT - 8Cut TapeSi1 Channel20 V18.8 nCEnhancement  
WST3404A


SOT-23-3L MOSFETs ROHS
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Winsok 3346
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AUD 0.0369
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IAUC120N06S5N017ATMA1


MOSFET MOSFET_)40V 60V)
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Infineon 3344
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AUD 1.6418
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120 A60 V1.6 mOhmsN - Channel 2.8 V- 55 C+ 175 C167 WSMD/SMTTDSON - 8 - 43Reel , Cut TapeSi1 Channel- 20 V , 20 V73.7 nCEnhancementAEC - Q101OptiMOS
SQM120P10_10M1LGE3


MOSFET P Ch -100Vds 20Vgs
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Vishay 2517
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AUD 6.6349
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120 A100 V8.1 mOhmsP - Channel 2.5 V- 55 C+ 175 C375 WSmd/SmtTO - 263 - 3TubeSi1 Channel20 V190 nCEnhancementAec - Q101Trenchfet
IRFP9240PBF


P-Channel 200 V 12A (Tc) 150W (Tc) Through Hole TO-247AC
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Vishay 825
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AUD 1.8622
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12 A200 V500 mOhmsP - Channel 2 V- 55 C+ 150 C150 WThrough HoleTO - 247AC - 3TubeSi1 Channel10 V44 nCEnhancement  
SSM3K15AFS,LF(B


Transistor: N-MOSFET; unipolar; 30V; 100mA; 100mW; SC75
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Toshiba 0
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AUD 0.0689
Multiples of: 1

                   
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