MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SI7145DP-T1-GE3


Vishay Semiconductors MOSFET -30V 2.6mOhm10V 60A P-Ch G-III
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Vishay 3401
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AUD 1.9811
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- 60 A- 30 V2.6 mOhmsP - Channel20 V - 55 C+ 150 C104 WSmd/SmtSO - 8Reel   129 nCEnhancement  
DMN6069SFGQ-13


MOSFET MOSFET BVDSS: 41V-60V
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Diodes Incorporated 3319
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AUD 0.4466
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18 A60 V39 mOhmsN - Channel 1 V- 55 C+ 150 C2.4 WSmd/SmtPowerdi3333 - 8Cut TapeSi1 Channel20 V25 nCEnhancementAec - Q101 
BSZ086P03NS3E G


Infineon Technologies MOSFET P-Ch -30V 13.5A TSDSON-8 OptiMOS P3
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Infineon 3319
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AUD 0.5659
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13.5 A- 30 V8.6 mOhmsP - Channel25 V- 3.1 V- 55 C+ 150 C69 WSmd/SmtTSDSON - 8ReelSi1 Channel25 V21.4 nCEnhancement Optimos
2V7002LT1G


N-Channel 60 V 115mA (Tc) 225mW (Ta) Surface Mount SOT-23-3 (TO-236)
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ON Semiconductor 3317
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AUD 0.1191
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115 mA60 V7.5 OhmsN - Channel20 V1 v to 2.5 V- 55 C+ 150 C300 mWSmd/SmtSOT - 23 - 3ReelSi1 Channel10 V EnhancementAec - Q101 
Hot BSC010N04LS


Infineon Technologies MOSFET N-Ch 40V 100A TDSON-8 FL OptiMOS
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Infineon 3310
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AUD 0.674
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100 A40 V1 mOhmsN - Channel 1.2 V- 55 C+ 150 C139 WSmd/SmtDSON - 8ReelSi1 Channel20 V95 nCEnhancement Optimos
AO3400A


30V 5.8A 350mW 35mΩ@10V,5.8A 1.4V@250uA null SOT-23 MOSFETs ROHS
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FUXINSEMI 3307
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AUD 0.0306
Multiples of: 10

                   
WSD3067DN56


DFN-8(5.2x5.5) MOSFETs ROHS
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Winsok 3264
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AUD 0.3284
Multiples of: 5

                   
SI3585CDV-T1-GE3


MOSFET -20V Vds 12V Vgs TSOP-6 N&P PAIR
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Vishay 3167
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AUD 0.2023
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2.1 A , 3.9 A20 V58 mOhms , 195 mOhmsN - Channel, P - Channel 600 mV- 55 C+ 150 C1.3 w , 1.4 WSmd/SmtTSOP - 6Cut TapeSi2 Channel4.5 V3.2 nC , 6 nCEnhancement Trenchfet
FDB2710


Transistor: N-MOSFET; unipolar; 250V; 50A; 260W; D2PAK
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ON Semiconductor 3162
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AUD 4.2358
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SSM6N15AFU,LF


Mosfet Array 2 N-Channel (Dual) 30V 100mA 300mW Surface Mount US6
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Toshiba 2284
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AUD 0.0931
Multiples of: 5

100 mA30 V3.6 OhmsN - Channel    300 mWSmd/SmtSOT - 363 - 6Cut TapeSi2 Channel20 V    
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