MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
RQ3P270BKFRATCB


MOSFETs Nch 100V 27A, HSMT8AG, Power MOSFET for Automotive
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ROHM 3392
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AUD 0.9342
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27 A100 V27 mOhmsN - Channel 2.5 V- 55 C+ 150 C69 WSMD/SMTH SMT - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V13.6 nCEnhancement  
BSC024NE2LSATMA1


Transistor: N-MOSFET; unipolar; 25V; 25A; 48W; PG-TDSON-8
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Infineon 3387
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AUD 0.736
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            Optimos      
TSM60NB190CZ C0G


MOSFET 600V 18A Single N- Channel Power MOSFET
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Taiwan Semiconductor 3384
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AUD 3.3164
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18 A600 V170 mOhmsN - Channel 2 V- 55 C+ 150 C150.6 WThrough HoleTO - 220 - 3TubeSi1 Channel10 V31 nCEnhancement  
BUK9Y40-55B,115


NXP Semiconductors MOSFET TRENCH 31V-99V G3
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Nexperia 3376
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AUD 0.4121
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18 A55 V36 mOhmsN - Channel  - 55 C+ 175 C59 WSmd/SmtLFPAK - 4ReelSi1 Channel15 V Enhancement  
WSF35P06


60V 13.5A 80mΩ@10V,3A 31.3W P Channel TO-252-3 MOSFETs ROHS
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Winsok 3375
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AUD 0.3284
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IPP011N04NF2SAKMA1


MOSFETs N
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Infineon 3371
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AUD 2.1343
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201 A40 V1.15 mOhmsN - Channel 3.4 V- 55 C+ 175 C375 WThrough HoleTO - 220 - 3TubeSi1 Channel- 20 V , + 20 V210 nCEnhancement  
RRR030P03HZGTL


P-Channel 30V 3A (Ta) 700mW (Ta) Surface Mount TSMT3
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ROHM 3347
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AUD 0.3513
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3 A30 V75 mOhmsP - Channel 2.5 V- 55 C+ 150 C1 WSMD/SMTSOT - 346T - 3Reel , Cut TapeSi1 Channel- 20 V , + 20 V5.2 nCEnhancementAEC - Q101 
SISH625DN-T1-GE3


MOSFET -30V Vds; 20V Vgs PowerPAK 1212-8SH
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Vishay 3335
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AUD 0.7418
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- 35 A- 30 V7 mOhmsP - Channel - 2.5 V- 55 C+ 150 C52 WSmd/SmtPowerpak1212 - 8Cut TapeSi1 Channel20 V126 nCEnhancement Trenchfet, Powerpak
SP6023CNK


60V 1 N-Channel + 1 P-Channel PDFN-8L(5x6) MOSFETs ROHS
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Siliup 2672
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AUD 0.2267
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FQA44N30


Fairchild Semiconductor MOSFET 300V N-Channel QFET
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ON Semiconductor 362
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AUD 5.2472
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43.5 A300 V69 mOhmsn - channel30 V - 55 C+ 150 C310 Wthrough holeTO - 3P - 3Tubesi1 channel30 V enhancement qfet
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