MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
TPAO6800


SOT-23-6 MOSFETs ROHS
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TECH PUBLIC 3173
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AUD 0.0741
Multiples of: 5

                   
SP4606BCP8


30V 1 N-Channel + 1 P-Channel SOP-8 MOSFETs ROHS
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Siliup 3171
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AUD 0.0649
Multiples of: 10

                   
RQ6E030SPTR


MOSFET PCH -30V -3A SMALL SIGNAL
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ROHM 3169
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AUD 0.3457
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3 A30 V80 mOhmsP - Channel 1 V- 55 C+ 150 C1.25 WSmd/SmtSOT - 457T - 6Cut TapeSi1 Channel20 V6 nCEnhancement  
BXT230P03B


Transistor: P-MOSFET
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Bridgelux 3166
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AUD 0.2311
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SI1317DL-T1-BE3


P-Channel 20V 1.4A (Ta), 1.4A (Tc) 400mW (Ta), 500mW (Tc) Surface Mount SC-70-3
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Vishay 3163
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AUD 0.1698
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          SC - 70 , SOT - 323Digi - Reel®Mosfet (Metal Oxide)      
AOD480-HXY


30V 20A 25mΩ@10V,10A 20.8W 2.5V@250uA N Channel TO-252-2L MOSFETs ROHS
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HXY MOS 3162
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AUD 0.0993
Multiples of: 5

                   
DMNH6012SPSQ-13


MOSFET MOSFET BVDSS: 41V-60V
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Diodes Incorporated 3161
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AUD 1.0967
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         Smd/SmtPowerdi5060 - 8Cut TapeSi    Aec - Q101 
ZVN4206A


N-Channel 60 V 600mA (Ta) 700mW (Ta) Through Hole TO-92
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Diodes Incorporated 3158
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AUD 0.4394
Multiples of: 296

600 mA60 V1 OhmsN - Channel 1.3 V- 55 C+ 150 C700 mWThrough HoleTO - 92 - 3BulkSi1 Channel10 V Enhancement  
2N7002


Transistor: N-MOSFET; unipolar; 60V; 0.115A; 0.225W; SOT23
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Luguang 1231
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AUD 0.0543
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IQEH46NE2LM7ZCGSCATMA1


MOSFETs OptiMOS 7 Power -Transistor, 25 V
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Infineon 846
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AUD 1.7567
Multiples of: 1

430 A25 V480 uOhmsN - Channel 1.7 V- 55 C+ 175 C150 WSMD/SMT Reel , Cut TapeSi1 Channel12 V29 nCEnhancement OptiMOS
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