MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
HUF76629D3ST


Fairchild Semiconductor MOSFET 20a 100V 0.054 Ohm Logic Level N-Ch
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ON Semiconductor 3813
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AUD 2.2175
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20 A100 V41.5 mOhmsN - Channel  - 55 C+ 175 C110 WSmd/SmtTO - 252 - 3ReelSi1 Channel16 V Enhancement  
SP6005ADP8


SOP-8L MOSFETs ROHS
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Siliup 3812
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AUD 0.1099
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HYG180N10LS1C2


PDFN-8(5x6) MOSFETs ROHS
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HuaYi 3812
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AUD 0.2204
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BSZ0910LSATMA1


MOSFET TRENCH <= 40V
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Infineon 3812
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AUD 0.3379
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40 A30 V4.6 mOhmsN - Channel 2 V- 55 C+ 150 C37 WSMD/SMTTSDSON - 8Cut Tape , Reel , ReelSi1 Channel- 20 V , + 20 V17 nCEnhancement  
IPD023N03LF2SATMA1


MOSFETs Addresses a broad range of applications from low- to high-switching frequency
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Infineon 3811
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AUD 0.6879
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137 A30 V2.35 mOhmsN - Channel 2.35 V- 55 C+ 175 C107 WSMD/SMTTO - 252 - 3Reel , Cut TapeSi1 Channel- 20 V , + 20 V24 nCEnhancement StrongIRFET
DMC3032LSD-13


MOSFET 30V VDSS 20V VGSS 2.5W PD COMP MOSFET
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Diodes Incorporated 3810
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AUD 0.2619
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8.1 A , 7 A30 V32 Ohms , 39 OhmsN - Channel, P - Channel 1 V- 55 C+ 150 C2.5 WSmd/SmtSOIC - 8Cut TapeSi2 Channel10 V9.2 nC , 21.1 nCEnhancement  
BSS138BKS.115


60V 320mA 1.6O@10V,320mA 445mW 2 N-Channel SOT-363 MOSFETs ROHS
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Nexperia 3809
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AUD 0.2311
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AONR32342C


- MOSFETs ROHS
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Alpha & Omega 3809
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AUD 0.2439
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LN2324DT2AG


MOSFET N Trench 20V 14A 1V @ 250uA 10.5 mΩ @ 10A,4.5V DFN 2020-6S RoHS
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Leshan 3807
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AUD 0.1483
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FDN359AN


Transistor: N-MOSFET; unipolar; 30V; 2.7A; 0.5W; SuperSOT-3
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ON Semiconductor 868
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AUD 0.2158
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