MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
TSM043NB04CZ C0G


MOSFET 40V, 124A, Single N-Channel Power MOSFET
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Taiwan Semiconductor 3850
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AUD 3.1923
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124 A40 V4.3 mOhmsN - Channel 4 V- 55 C+ 150 C2 WThrough HoleTO - 220 - 3TubeSi1 Channel- 20 V , + 20 V74 nCEnhancement  
PJQ44605AP-AU_R2_002A1


MOSFETs 60V P-Channel Enhancement Mode MOSFET
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Panjit 3848
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AUD 0.4679
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38 A60 V28 mOhmsP - Channel 2.5 V- 55 C+ 175 C75 WSMD/SMTDFN3333 - 8LReel , Cut TapeSi1 Channel- 20 V , + 20 V44 nCEnhancementAEC - Q101 
BRCL4056SE


ESOP-8 MOSFETs ROHS
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Blue Rocket 3846
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AUD 0.0584
Multiples of: 10

                   
SIRS5700DP-T1-RE3


MOSFETs N-CH 150V Vds 20Vgs 144A Rds .0062
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Vishay 3846
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AUD 3.0032
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144 A150 V5.6 mOhmsN - Channel 4 V- 55 C+ 150 C278 WSMD/SMTSO - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V73 nCEnhancement  
IXFH400N075T2


MOSFET TRENCHT2 HIPERFET PWR MOSFET 75V 400A
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IXYS 3846
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AUD 15.5397
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400 A75 V2.3 mOhmsn - channel 4 V- 55 C+ 175 C1 kWthrough holeTO - 247 - 3Tubesi 20 V420 nCenhancement hiperfet
IAUS240N08S5N019ATMA1


MOSFET MOSFET_75V 120V
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Infineon 3845
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AUD 3.6092
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           Cut Tape       
ISP14EP15LMXTSA1


MOSFET SMALL SIGNAL MOSFETS
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Infineon 3843
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AUD 0.2794
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1.29 A150 V1.38 OhmsP - Channel 2 V- 55 C+ 150 C5 WSMD/SMT Reel , Cut TapeSi1 Channel- 20 V , + 20 V11.6 nCEnhancement  
BSZ0902NSIATMA1


Trans MOSFET N-CH 30V 21A 8-Pin TSDSON EP T/R
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Infineon 3842
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AUD 0.5937
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   N - Channel       Reel 1 Channel    Optimos
CJQ4406A


SOP-8 MOSFETs ROHS
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Changjing Electronics Technology 3841
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AUD 0.1185
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DMN3008SFG-7


Diodes Incorporated MOSFET 30V N-Ch Enh FET 4.6mOhm 10Vgs 17.6A
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Diodes Incorporated 3836
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AUD 0.3002
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17.6 A30 V4.6 mOhmsN - Channel 2.3 V- 55 C+ 150 C2.1 WSmd/SmtPOWERDI - 3333ReelSi1 Channel20 V41 nCEnhancement Powerdi
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