MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
LP2309LT1G


MOSFET P Trench 60V 1.9A 3V @ 250uA 215 mΩ @ 1.8A,10V SOT-23 (TO-236) RoHS
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Leshan 47908
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AUD 0.0643
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IRLB3813PBF


MOSFET N Trench 30V 260A 2.35V @ 150uA 1.95 mΩ @ 60A,10V TO-220 (TO-220-3) RoHS
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Infineon 3112
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AUD 1.0951
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260 A30 V1.95 mOhmsN - Channel 1.9 V- 55 C+ 175 C230 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V57 nC   
NVJD5121NT1G


ON Semiconductor MOSFET NFET SC88 60V 295MA 1.6OH
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ON Semiconductor 3110
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AUD 0.1143
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300 mA60 V1 OhmsN - Channel 1 V- 55 C+ 175 C300 mWSmd/SmtSOT - 363 - 6ReelSi2 Channel20 V900 pCEnhancementAec - Q101 
NTD20N06T4G


MOSFET 60V 20A N-Channel
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ON Semiconductor 3110
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AUD 1.1739
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20 A60 V37.5 mOhmsN - Channel  - 55 C+ 175 C60 WSmd/SmtDPAKReelSi1 Channel20 V Enhancement  
BSC123N08NS3GATMA1


Transistor: N-MOSFET; unipolar; 80V; 55A; 66W; PG-TDSON-8
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Infineon 3106
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AUD 0.6958
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            Optimos 3      
BSS123


100V 0.29A 350mW 2.7@10V 1V@250uA SOT-23 MOSFETs ROHS
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ElecSuper 3104
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AUD 0.0143
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G6N02L-B


SOT-23-3L MOSFETs ROHS
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GOFORD 3104
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AUD 0.0251
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BSC032NE2LS


MOSFET N-Channel 25V MOSFET
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Infineon 3104
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AUD 0.4564
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84 A25 V2.7 mOhmsN - Channel 1.2 V- 55 C+ 150 C37 WSmd/SmtTDSON - 8ReelSi1 Channel20 V21 nCEnhancement Optimos
RQ3L090GNTB


MOSFET NCH 60V 30A POWER
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ROHM 3015
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AUD 0.8734
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30 A60 V13.9 mOhmsN - Channel 1.3 V- 55 C+ 150 C20 WSmd/SmtH SMT - 8Cut TapeSi1 Channel20 V24.5 nCEnhancement  
HSS2302A


MOSFET N Channel 20V 3.6A 1.2V @ 250uA 50mO @ 3A,4.5V SOT-23-3 RoHS
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HUASHUO 388
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AUD 0.0133
Multiples of: 50

                   
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