MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
DMP3068L-7


MOSFET 30V P-Ch Enh Mode 72mOhm -10V -3.9A
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Diodes Incorporated 6033
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AUD 0.0675
Multiples of: 10

3.3 A30 V72 mOhmsP - Channel 500 mV- 55 C+ 150 C1.2 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V15.9 nCEnhancement  
FDMC86340ET80


Fairchild Semiconductor MOSFET
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ON Semiconductor 3139
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AUD 2.6104
Multiples of: 1

48 A80 V8.5 mOhmsN - Channel20 V2 V- 55 C+ 150 C54 WSmd/SmtPOWER - 33 - 8ReelSi1 Channel20 V31 nC  Powertrench Power Clip
FDBL0065N40


Fairchild Semiconductor MOSFET
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ON Semiconductor 3139
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AUD 4.1744
Multiples of: 1

300 A40 V500 uOhmsn - channel20 V2 V- 55 C+ 175 C429 Wsmd/smtMO - 299A - 8Cut Tapesi1 channel20 V220 nCenhancement powertrench
ZXMN4A06KTC


MOSFET 40V 10.9A N-CHANNEL MOSFET
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Diodes Incorporated 3135
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AUD 0.909
Multiples of: 1

10.9 A40 V50 mOhmsN - Channel  - 55 C+ 150 C9.5 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel20 V Enhancement  
ZXMN6A08E6TA


N-Channel 60 V 2.8A (Ta) 1.1W (Ta) Surface Mount SOT-26
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Diodes Incorporated 3135
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AUD 0.3971
Multiples of: 1

   N - channel  - 55 C+ 150 C Smd/smtSOT - 23 - 6Reel       
IRFZ44VZSPBF


Transistor: N-MOSFET; unipolar; 60V; 40A; 92W; D2PAK
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Infineon 3128
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AUD 1.7731
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57 A60 V9.6 mOhmsN - Channel 4 V- 55 C+ 175 C92 WSmd/SmtD2PAKTubeSi1 Channel20 V43 nC   
HXY4612S


60V 1PCSN-Channel&1PCSP-Channel SOP-8 MOSFETs ROHS
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HXY MOS 3126
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AUD 0.1929
Multiples of: 5

                   
DMTH10H025LK3Q-13


MOSFET MOSFET BVDSS: 61V-100V
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Diodes Incorporated 2917
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AUD 0.7207
Multiples of: 1

51.7 A100 V22 mOhmsN - Channel 1 V- 55 C+ 175 C100 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel20 V21 nCEnhancementAec - Q101 
BSZ068N06NS


Infineon Technologies MOSFET
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Infineon 2840
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AUD 0.7552
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40 A60 V5.6 mOhmsN - Channel 2.1 V- 55 C+ 150 C46 WSmd/SmtTSDSON - 8ReelSi1 Channel20 V21 nCEnhancement Optimos
DMN3009SFG-7


MOSFET 30V N-Ch Enh FET 20Vgs Low Rdson
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Diodes Incorporated 2839
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AUD 0.481
Multiples of: 1

16 A30 V9 mOhmsN - Channel 1 V- 55 C+ 150 C900 mWSmd/SmtPowerdi3333 - 8Cut TapeSi1 Channel20 V42 nCEnhancement  
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