MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SQJQ900E-T1_GE3


MOSFET N Ch 40Vds 20Vgs AEC-Q101 Qualified
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Vishay 5373
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AUD 2.6299
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100 A40 V3.4 mOhms , 3.4 mOhmsN - Channel 1.5 V- 55 C+ 175 C135 WSmd/SmtPOWERPAK - 8X8L - 4Cut TapeSi2 Channel20 V120 nC , 120 nCEnhancementAec - Q101Trenchfet
APG038N01G


100V 104A 3.1mΩ@20V,104A null PDFN5x6 MOSFETs ROHS
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Quan Li 3444
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AUD 1.3059
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LP4435T1G


30V 9.5A 19mΩ@10V,7A 3.1W 3V@250uA P Channel SOP-8 MOSFETs ROHS
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Leshan 3433
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AUD 0.1038
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IPD50P04P413ATMA2


MOSFET MOSFET_20V 40V
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Infineon 3432
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AUD 0.7454
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           Cut Tape       
IAUT240N08S5N019ATMA1


OptiMOS-5 N-channel Enhancement mode Power Transistor 1.9m 230W 80V PG-HSOF-8 T/R
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Infineon 3432
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AUD 2.791
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240 A80 V2 mOhmsN - Channel 2.2 V- 55 C+ 175 C230 WSmd/SmtHSOF - 8Cut TapeSi1 Channel6 V100 nCEnhancementAec - Q101 
SI5403DC-T1-GE3


MOSFET 30V 6.0A 6.3W 30mohm @ 10V
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Vishay 3427
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AUD 0.3855
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6 A30 V30 mOhmsP - Channel 1 V- 55 C+ 150 C6.3 WSmd/SmtCHIP - FET - 8ReelSi1 Channel- 10 V28 nCEnhancement Trenchfet
SKQ18P02AD


PDFN(5x6) MOSFETs ROHS
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Shikues 3424
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AUD 0.1876
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IRFP054PBF


N-Channel 60 V 70A (Tc) 230W (Tc) Through Hole TO-247AC
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Vishay 3418
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AUD 3.2672
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           TubeSi      
BSC047N08NS3GATMA1


Transistor: N-MOSFET; unipolar; 80V; 100A; 125W; PG-TDSON-8
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Infineon 2288
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AUD 1.6047
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            Optimos 3      
HYG090N06LS1C2


PDFN5x6-8L MOSFETs ROHS
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HuaYi 1202
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AUD 0.2212
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