MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Id - Continuous Drain Current
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Transistor Polarity
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRLZ34PBF-BE3


N-Channel 60V 30A (Tc) 88W (Tc) Through Hole TO-220AB
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Vishay 3183
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AUD 1.5467
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30 A60 V50 mOhmsN - Channel 2 V- 55 C+ 175 C88 WThrough HoleTO - 220AB - 3TubeSi1 Channel- 10 V , + 10 V35 nCEnhancement  
DMN2400UFB4-7B


Trans MOSFET N-CH 20V 0.75A Automotive 3-Pin DFN-H4 T/R
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Diodes Incorporated 3181
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AUD 0.0322
Multiples of: 20

0.75 A  N     Surface Mount Tape And Reel    Enhancement  
AOD413A(UMW)


TO-252 MOSFETs ROHS
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Youtai 3181
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AUD 0.1138
Multiples of: 5

                   
DMP3050LVTQ-7


MOSFET MOSFET BVDSS: 25V~30V TSOT26 T&R 3K
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Diodes Incorporated 3174
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AUD 0.179
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4.5 A30 V50 mOhmsP - Channel 2 V- 55 C+ 150 C1.6 WSMD/SMT Reel , Cut TapeSi1 Channel- 25 V , + 25 V5.1 nCEnhancement  
DMC3016LDV-13


MOSFET MOSFET BVDSS 31V-40V
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Diodes Incorporated 3174
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AUD 0.3497
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         Smd/SmtPowerdi3333 - UXC - 8Cut TapeSi      
TPM2102BC3


20V 2.5A 57mO@4.5V,2.5A 700mW N Channel SOT-323-3 MOSFETs ROHS
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TECH PUBLIC 3173
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AUD 0.0411
Multiples of: 10

                   
IXFH52N30P


MOSFET 52 Amps 300V 0.066 Rds
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IXYS 3169
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AUD 6.403
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52 A300 V73 mOhmsn - channel 5 V- 55 C+ 150 C400 Wthrough holeTO - 247 - 3Tubesi1 channel20 V110 nCenhancement polar, hiperfet
2N7002K


MOSFET N Trench 60V 300mA 1.9V @ 250uA 3 Ω @ 400mA,5V SOT-23 (SOT-23-3) RoHS
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NCE Power 3065
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AUD 0.0212
Multiples of: 20

                   
FDMS86520


MOSFET 60V N-Channel PowerTrench MOSFET
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ON Semiconductor 2954
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AUD 1.1969
Multiples of: 1

42 A60 V7.4 mOhmsN - Channel  - 55 C+ 150 C69 WSmd/SmtPOWER - 56 - 8ReelSi1 Channel20 V28 nC  Powertrench
SUP10250E-GE3


MOSFET 250V Vds 20V Vgs TO-220
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Vishay 409
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AUD 4.409
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63 A250 V25 mOhmsN - Channel 2 V- 55 C+ 175 C375 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V88 nCEnhancement Thunderfet
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