MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
AP30H220G


30V 150A 1.4mΩ@20V,150A null PDFN5x6-8L MOSFETs ROHS
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Quan Li 3396
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AUD 0.6923
Multiples of: 1

                   
DMP3098L


MOSFET P Trench 30V 3.8A 30V @ 250uA（Min） 55 mΩ @ 4.2A,10V SOT-23 (SOT-23-3) RoHS
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Shikues 3395
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AUD 0.054
Multiples of: 10

                   
BSC018NE2LS


Infineon Technologies MOSFET N-Ch 25V 100A TDSON-8 OptiMOS
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Infineon 3395
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AUD 0.6764
Multiples of: 1

100 A25 V1.8 mOhmsN - Channel 2 V- 55 C+ 150 C69 WSmd/SmtTDSON - 8ReelSi1 Channel20 V19 nC  Optimos
RQ3G270BKFRATCB


MOSFETs Automotive Nch 40V 27A Power MOSFET for ADAS/Info./Lighting/Body.
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ROHM 3395
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AUD 0.8915
Multiples of: 1

27 A40 V9.6 mOhmsN - Channel 2.5 V- 55 C+ 150 C69 WSMD/SMTH SMT - 8AGReel , Cut TapeSi1 Channel- 20 V , + 20 V19 nCEnhancement  
RQ3L270BLFRATCB


MOSFETs Nch 60V 27A, HSMT8AG, Power MOSFET for Automotive
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ROHM 3395
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AUD 0.9325
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27 A60 V14.7 mOhmsN - Channel 4 V- 55 C+ 150 C69 WSMD/SMTH SMT - 8AGReel , Cut TapeSi1 Channel- 20 V , + 20 V15 nCEnhancement  
IPP60R520C6XKSA1


Transistor: N-MOSFET; unipolar; 600V; 8.1A; 66W; PG-TO220-3
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Infineon 3395
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AUD 1.1754
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            coolmos c6      
BSS84KNC


PDFN1006-3 MOSFETs ROHS
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Siliup 2910
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AUD 0.0073
Multiples of: 50

                   
AP2305AGN


30V 4.2A 1.2W 55m@10V,4.2A 1V@4.2A SOT-23 MOSFETs ROHS
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TECH PUBLIC 2822
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AUD 0.0671
Multiples of: 10

                   
DN2540N8-G


MOSFET N Trench 400V 170mA (Tj) 25 Ω @ 120mA,0V SOT-89 (SOT-89-3) RoHS
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Microchip 821
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AUD 2.7195
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170 mA400 V25 OhmsN - Channel  - 55 C+ 150 C1.6 WSmd/SmtSOT - 89 (TO - 243AA)ReelSi1 Channel20 V Depletion  
IPA80R280P7XKSA1


MOSFET LOW POWER_NEW
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Infineon 752
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AUD 2.2821
Multiples of: 1

17 A800 V0.28 Ohmsn - channel 3 V- 55 C+ 150 C30 Wsmd/smtTO - 220 - 3Tubesi1 channel30 V36 nCenhancement coolmos
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