MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
15N10


100V 15A 115mΩ@10V 2.5V null TO-252-2L MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

HXY MOS 3390
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AUD 0.1358
Multiples of: 5

                   
IPD90N04S4-04


Infineon Technologies MOSFET N-Ch 40V 90A DPAK-2 OptiMOS-T2
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Infineon 3380
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AUD 0.6501
Multiples of: 1

90 A40 V4.1 mOhmsN - Channel 4 V- 55 C+ 175 C71 WSmd/SmtDPAK - 3ReelSi1 Channel20 V33 nCEnhancementAec - Q101Optimos
PSMN8R0-40BS,118


NXP Semiconductors MOSFET N-CH 40 V 7.6 MOHM MOSFET
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Nexperia 3377
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AUD 0.9424
Multiples of: 1

77 A36 V7.6 mOhmsN - Channel    86 WSmd/SmtTO - 252 - 3ReelSi1 Channel4.8 V    
ZXM61N03F-HXY


30V 4A 29m 1PCSNChannel SOT-23 MOSFETs ROHS
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HXY MOS 3375
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AUD 0.0558
Multiples of: 10

                   
DMC2700UDM-7


MOSFET MOSFET BVDSS
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Diodes Incorporated 3375
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AUD 0.107
Multiples of: 5

1.34 A , 1.14 A20 V700 mOhms , 1.3 OhmsN - Channel, P - Channel 1 V- 55 C+ 150 C1.12 WSmd/SmtSOT - 26 - 6Cut TapeSi2 Channel6 V736.6 pCEnhancement  
ISG0614N06NM5HATMA1


MOSFETs N
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Infineon 3358
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AUD 3.1687
Multiples of: 1

233 A60 V1.6 mOhmsN - Channel 3.3 V- 55 C+ 175 C167 WSMD/SMTTFN - 10Reel , Cut TapeSi2 Channel- 20 V , + 20 V68 nCEnhancement  
IRLML2246TRPBF


SOT-23 MOSFETs ROHS
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TECH PUBLIC 3346
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AUD 0.0594
Multiples of: 10

                   
SI8466EDB-T2-E1


Vishay Semiconductors MOSFET 8V 5.4A 1.8W 43mOhms 4.5V
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Vishay 3021
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AUD 0.2446
Multiples of: 1

5.4 A8 V43 mOhmsN - Channel 700 mV  1.8 WSmd/SmtMICRO - FOOT - 4ReelSi 700 mV13 nC  Microfoot Trenchfet
IRF9389TR(UMW)


SOP-8 MOSFETs ROHS
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Youtai 2910
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AUD 0.1551
Multiples of: 5

                   
TM10H03S


30V 9.6A 21m SOP-8 MOSFETs ROHS
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Tritech-MOS 33
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AUD 0.0961
Multiples of: 5

                   
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