MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
DMP31D0UFB4-7B


Diodes Incorporated MOSFET MOSFET BVDSS: 25V-30 X2-DFN1006-3 T&R 10K
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Diodes Incorporated 3210
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AUD 0.1441
Multiples of: 5

760 mA30 V2 OhmsP - Channel 1.1 V- 55 C+ 150 C460 mWSmd/SmtX2 - DFN1006 - 3ReelSi1 Channel8 V1.5 nCEnhancement  
PSMN4R3-80PS,127


MOSFET N-Ch 80V 4.3 mOhms
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Nexperia 3209
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AUD 5.7369
Multiples of: 1

120 A80 V4.3 mOhmsn - channel 3 V- 55 C+ 175 C306 Wthrough holeTO - 220 - 3Tubesi1 channel20 V104 nC   
HSST3134


20V 900mA 250mW 400mΩ@4.5V,800mA 1V@250uA N Channel SOT-523 MOSFETs ROHS
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HUASHUO 3208
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AUD 0.0411
Multiples of: 10

                   
DMP2110U-7


MOSFET MOSFET BVDSS: 8V~24V SOT23 T&R 3K
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Diodes Incorporated 3205
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AUD 0.1067
Multiples of: 1

3.5 A20 V80 mOhmsP - Channel 1 V- 55 C+ 150 C1.2 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V6 nCEnhancement  
DMN3009LFVW-7


MOSFET MOSFET BVDSS: 25V-30V
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Diodes Incorporated 3202
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AUD 0.3563
Multiples of: 1

60 A30 V3.5 mOhmsN - Channel 1 V- 55 C+ 150 C2 WSmd/SmtPowerdi3333 - 8 Si1 Channel10 V42 nCEnhancement  
HX2300A


MOSFET N Trench 20V 2.5A 1.2V @ 250uA 52 mΩ @ 3.6A,4.5V SOT-23 RoHS
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hengjiaxing 3201
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AUD 0.0109
Multiples of: 50

                   
FSS2302M A2SHB


20V 3.3A 50mΩ@4.5V,3.6A 1000mW 1.5V@250uA N Channel 600pF@10V +150℃@(Tj) SOT-23 MOSFETs ROHS
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FOSAN 3201
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AUD 0.0143
Multiples of: 50

                   
TN2640LG-G


Transistor: N-MOSFET; unipolar; 400V; 2A; 1.3W; SO8
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Microchip 3201
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AUD 1.8284
Multiples of: 1

260 mA400 V5 OhmsN - Channel  - 55 C+ 150 C1.3 WSmd/SmtSOIC - 8ReelSi1 Channel20 V Enhancement  
IPN70R600P7SATMA1


700V 8.5A 6.9W 600mO@10V,1.8A N Channel SOT-223 MOSFETs ROHS
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Infineon 3199
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AUD 0.3891
Multiples of: 1

8.5 A700 V490 mOhmsN - Channel 2.5 V- 40 C+ 150 C6.9 WSmd/SmtPG - SOT - 223 - 3Cut TapeSi1 Channel16 V10.5 nCEnhancement Coolmos
FDC5614P


SOT-23-6 MOSFETs ROHS
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JSMSEMI 3133
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AUD 0.2192
Multiples of: 5

                   
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