MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
DMC3730UFL3-7


MOSFET BVDSS: 25V~30V X2-DFN1310-6 T&R 3K
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Diodes Incorporated 3833
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AUD 0.1502
Multiples of: 1

         Smd/SmtDFN1310 - 6Cut TapeSi      
TPH7R006PL,L1Q


MOSFET N-Ch 60V 1440pF 27nC 79A 81W
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Toshiba 3833
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AUD 0.5572
Multiples of: 1

79 A60 V5.4 mOhmsN - Channel 1.5 V + 175 C81 WSmd/SmtSOP - ADVANCE - 8Cut TapeSi1 Channel20 V22 nCEnhancement  
TSM10ND65CI C0G


MOSFET 650V 10A Sgl N-Chnl Power MOSFET
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Taiwan Semiconductor 3833
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AUD 4.0385
Multiples of: 1

10 A650 V800 mOhmsN - Channel 2.5 V- 55 C+ 150 C56.8 WThrough HoleI TO - 220 - 3 Si1 Channel30 V39.6 nCEnhancement  
PJX8603_R1_00001


MOSFETs Complementary Enhancement Mode MOSFETESD Protected
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Panjit 3831
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AUD 0.1657
Multiples of: 1

                   
STP75NF20


Transistor: N-MOSFET; unipolar; 200V; 47A; 190W; TO220-3
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STMicroelectronics 3831
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AUD 2.8387
Multiples of: 1

                   
BSS84K-TP


MOSFET P-Ch -60V 20V 0.225W -0.13A 0.52A
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Micro Commercial Components (MCC) 3830
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AUD 0.0867
Multiples of: 5

                   
JCS2N60V


600V 1.9A 3.8Ω@10V,1A 44W 4V@250uA N Channel IPAK MOSFETs ROHS
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Jilin 3829
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AUD 0.2299
Multiples of: 5

                   
DMN3042LFDF-7


MOSFET MOSFET BVDSS: 25V~30V U-DFN2020-6 T&R 3K
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Diodes Incorporated 3827
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AUD 0.2165
Multiples of: 1

         Smd/SmtU - DFN2020 - F - 6Cut TapeSi      
FDMA905P


MOSFET -12V Single P-Chan PowerTrench MOSFET
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ON Semiconductor 2910
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AUD 0.4038
Multiples of: 3000

10 A- 12 V16 mOhmsP - Channel8 V - 55 C+ 150 C900 mWSmd/SmtMICRO - FET - 6 2X2ReelSi1 Channel8 V   Powertrench
AUIRFN8459TR


International Rectifier MOSFET 40V Dual N Channel HEXFET
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Infineon 0
6 to 16 Weeks Calender.png

AUD 2.629
Multiples of: 1

70 A40 V5.9 mOhmsN - Channel 3 V- 55 C+ 175 C50 WSmd/SmtPQFN - 8ReelSi2 Channel20 V40 nCEnhancementAec - Q101 
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