MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
UT3N06G-AB3-R


MOSFET N Trench 60V 3A 3V @ 250uA 90 mΩ @ 3A,10V SOT-89 (SOT-89-3) RoHS
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Unisonic 3870
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AUD 0.0821
Multiples of: 5

                   
NCE3018AS


MOSFET N Trench 30V 18A 1.4V @ 250uA 7 mΩ @ 12A,10V SOP-8_150mil RoHS
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NCE Power 3870
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AUD 0.1465
Multiples of: 5

                   
SP6023CP8


60V 1 N-Channel + 1 P-Channel SOP-8L MOSFETs ROHS
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Siliup 3870
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AUD 0.2267
Multiples of: 5

                   
SP1012ACP8


100V 1 N-Channel + 1 P-Channel SOP-8L MOSFETs ROHS
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Siliup 3870
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AUD 0.3043
Multiples of: 5

                   
IPP033N03LF2SAKSA1


MOSFETs TRENCH <= 40V
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Infineon 3870
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AUD 0.6865
Multiples of: 1

78 A30 V3.3 mOhmsN - Channel 2.35 V- 55 C+ 175 C83 WThrough HolePG - TO220 - 3TubeSi1 Channel- 20 V , + 20 V3 nCEnhancement StrongIRFET
ZVN0124A


MOSFET N-Chnl 240V
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Diodes Incorporated 3870
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AUD 0.7338
Multiples of: 1

160 mA240 V16 OhmsN - Channel  - 55 C+ 150 C700 mWThrough HoleTO - 92BulkSi1 Channel20 V Enhancement  
RS1G120MNTB


ROHM Semiconductor MOSFET
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ROHM 3868
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AUD 0.2759
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12 A40 V20.7 mOhmsN - Channel 1 V- 55 C+ 150 C25 WSmd/SmtHSOP - 8Reel-1 Channel+/- 20 V9.4 nCEnhancement  
NTMFS4985NFT3G


MOSFET NFET SO8FL 30V 65A 5MOHM
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ON Semiconductor 3868
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AUD 0.5789
Multiples of: 1

65 A30 V3.4 mOhmsN - Channel     Smd/SmtSO - FL - 8Cut TapeSi1 Channel     
DMN65D8LDW-7


Diodes Incorporated MOSFET Dual N-Ch 60V 8ohm 5V VGS 170mA
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Diodes Incorporated 3773
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AUD 0.0379
Multiples of: 10

180 mA , 180 mA60 V , 60 V8 OhmsN - Channel 1 V , 1 V- 55 C+ 150 C300 mWSmd/SmtSOT - 363 - 6Cut TapeSi2 Channel20 V , 20 V870 pC , 870 pCEnhancement  
WSF15N10


MOSFET N Trench 100V 15A 2.5V @ 250uA 100 mΩ @ 5A,10V TO-252-2 (DPAK) RoHS
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Winsok 0
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AUD 0.2492
Multiples of: 5

                   
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