MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
DN3135K1-G


Transistor: N-MOSFET; unipolar; 350V; 0.18A; 360mW; SOT23-3
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Microchip 28078
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AUD 0.9254
Multiples of: 1

72 mA350 V35 OhmsN - Channel  - 55 C+ 150 C360 mWSmd/SmtSOT - 23 (TO - 236AB)ReelSi1 Channel20 V Depletion  
IRFH7446TRPBF


International Rectifier MOSFET 40V 85A 3.3mOhm 65nC StrongIRFET
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Infineon 3880
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AUD 0.5959
Multiples of: 1

117 A40 V3.3 mOhmsN Channel 3.9 V- 55 C+ 150 C78 WSmd/SmtPQFN - 8Cut TapeSi  98 nCEnhancement Strongirfet
SUD23N06-31-GE3


MOSFET N-Ch MOSFET 60V 31 mohm @ 10V
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Vishay 3880
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AUD 0.6558
Multiples of: 2000

21.4 A60 V31 mOhmsN - Channel 1 V- 55 C+ 150 C31.25 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel10 V11 nCEnhancement Trenchfet
IRFHM8363TRPBF


Mosfet Array 2 N-Channel (Dual) 30V 11A 2.7W Surface Mount 8-PQFN (3.3x3.3), Power33
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Infineon 3880
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AUD 0.8087
Multiples of: 4000

11 A30 V16.3 mOhmsN - Channel20 V1.8 V- 55 C+ 150 C2.7 WSmd/SmtDPQFN - 8ReelSi2 Channel20 V15 nC   
STP3LN62K3


N-Channel 620 V 2.5A (Tc) 45W (Tc) Through Hole TO-220
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STMicroelectronics 3880
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AUD 1.0842
Multiples of: 1

           -       
FDS3992


Transistor: N-MOSFET x2; unipolar; 100V; 4.5A; 2.5W; SO8
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ON Semiconductor 3880
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AUD 1.1151
Multiples of: 500

            Powertrench®      
FQP6N40C


MOSFET 400V N-Ch Q-FET advance C-Series
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ON Semiconductor 3880
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AUD 1.1536
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6 A400 V1 Ohmsn - channel  - 55 C+ 150 C73 Wthrough holeTO - 220 - 3Tubesi1 channel30 V enhancement qfet
IRF7458TRPBF


MOSFET N Trench 30V 14A 4V @ 250uA 8 mΩ @ 14A,16V SOIC-8_150mil RoHS
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Infineon 3880
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AUD 1.1813
Multiples of: 4000

14 A30 V8 mOhmsN - Channel  - 55 C+ 150 C2.5 WSmd/SmtSO - 8ReelSi1 Channel30 V39 nCEnhancement  
IRFS4227TRLPBF


MOSFET N Trench 200V 62A (Tc) 5V @ 250uA 26 mΩ @ 46A,10V TO-263-2 RoHS
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Infineon 1751
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AUD 1.1803
Multiples of: 1

62 A200 V26 mOhmsN - Channel  - 40 C+ 175 C330 WSmd/SmtD2PAKReelSi1 Channel30 V70 nCEnhancement  
STB7NK80ZT4


MOSFET N Trench 800V 5.2A (Tc) 4.5V @ 100uA 1.8 Ω @ 2.6A,10V D2PAK RoHS
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STMicroelectronics 582
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AUD 1.1254
Multiples of: 1

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