MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Id - Continuous Drain Current
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
ZVN4525ZTA


Diodes Incorporated MOSFET N-Chnl 250V
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Diodes Incorporated 9523
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AUD 0.5418
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240 mA250 V9.5 OhmsN - Channel40 V - 55 C+ 150 C1.2 WSmd/SmtSOT - 89 - 3Reel    Enhancement  
SSM3J35AMFV,L3F


MOSFET LowON Res MOSFET ID=-.25A VDSS=-20V
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Toshiba 7658
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AUD 0.0657
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250 mA20 V1.1 OhmsP - Channel 1 V + 150 C500 mW (1/2 w)Smd/SmtSOT - 723 - 3Cut TapeSi1 Channel10 V Enhancement  
FDP2710


MOSFET 250V N-Channel PowerTrench
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ON Semiconductor 4064
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AUD 3.6448
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50 A250 V42 mOhmsN - Channel  - 55 C+ 150 C260 WThrough HoleTO - 220 - 3TubeSi1 Channel30 V Enhancement Powertrench
HSBA50N06


60V 50A 62W 12mΩ@10V,30A 2.5V@250uA null PRPAK5x6 MOSFETs ROHS
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HUASHUO 3233
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AUD 0.2231
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RSF015N06TL


N-Channel 60 V 1.5A (Ta) 800mW (Ta) Surface Mount TUMT3
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ROHM 3233
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AUD 0.4922
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1.5 A60 V N - Channel 2.5 V  800 mWSmd/SmtSOT - 323T - 3ReelSi1 Channel20 V2 nC   
IPDD60R090CFD7XTMA1


N-Channel 600V 33A (Tc) 227W (Tc) Surface Mount PG-HDSOP-10-1
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Infineon 3232
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AUD 3.0701
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33 A600 V90 mOhmsN - Channel 4.5 V- 55 C+ 150 C227 WSMD/SMTHDSOP - 10Reel , Cut TapeSi1 Channel- 20 V , + 20 V42 nCEnhancement  
IAUCN08S7L110ATMA1


MOSFETs MOSFET_(75V 120V(
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Infineon 2814
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AUD 0.5796
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50 A80 V11 mOhmsN - Channel 2 V- 55 C+ 175 C58 WSMD/SMTTDSON - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V14.8 nCEnhancement  
Si4128DY-T1-E3


MOSFET 30V 10.9A 5.0W 24mohm @ 10V
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Vishay 2539
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AUD 0.3415
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   N - Channel  - 55 C+ 150 C Smd/SmtSOIC - 8 NarrowReelSi     Trenchfet
NTR3A30PZ-HXY


20V 5A 30m 1PCSPChannel SOT-23 MOSFETs ROHS
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HXY MOS 2526
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AUD 0.0671
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FDV304P


SOT-23 MOSFETs ROHS
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MSKSEMI 281
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AUD 0.0961
Multiples of: 5

                   
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