MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Id - Continuous Drain Current
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
RQ3G100GNTB


ROHM Semiconductor MOSFET
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ROHM 3248
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AUD 0.3021
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10 A40 V11 mOhmsN - Channel 1.2 V- 55 C+ 150 C2 WSmd/SmtH SMT - 8ReelSi1 Channel20 V8.4 nCEnhancement  
IPB180N04S400ATMA1


Infineon Technologies MOSFET N-Ch 40V 180A D2PAK-6 OptiMOS-T2
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Infineon 3247
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AUD 2.7418
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180 A40 V800 uOhmsN - Channel 2 V- 55 C+ 175 C300 WSmd/SmtTO - 263 - 7ReelSi1 Channel20 V286 nCEnhancementAec - Q101 
IPD90N03S4L03ATMA1


MOSFET N-Ch 30V 90A DPAK-2 OptiMOS-T2
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Infineon 3244
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AUD 0.9194
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90 A30 V2.5 mOhmsN - Channel 1 V- 55 C+ 175 C94 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel16 V75 nCEnhancementAec - Q101 
PSMN035-150P,127


MOSFET RAIL PWR-MOS
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Nexperia 3243
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AUD 2.4953
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50 A150 V30 mOhmsn - channel  - 55 C+ 175 C250 Wthrough holeTO - 220 - 3Tubesi1 channel20 V enhancement  
IRFR9020TRPBF


MOSFET P-Chan 60V 8.8 Amp
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Vishay 3242
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AUD 1.274
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   P - Channel  - 55 C+ 150 C Smd/SmtDPAKReelSi      
2N7002BKV.115


Transistor: N-MOSFET x2; unipolar; 60V; 0.24A; Idm:1.2A; 0.525W
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Nexperia 3239
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AUD 0.2733
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DMC3016LDV-13


MOSFET MOSFET BVDSS 31V-40V
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Diodes Incorporated 3174
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AUD 0.3497
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         Smd/SmtPowerdi3333 - UXC - 8Cut TapeSi      
ZXMP3F30FHTA


MOSFET 30V P-Channel MOSFET 20V VGS -15.3A IDM
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Diodes Incorporated 3121
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AUD 0.2413
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           Reel       
BC3407 3407


30V 4.1A 60mΩ@10V,4.1A 350mW P Channel SOT-23 MOSFETs ROHS
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Hong Kong Chuangji 1474
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AUD 0.0361
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STW11NM80


MOSFET N-Ch 800 Volt 11 Amp Power MDmesh
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STMicroelectronics 42
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AUD 5.4746
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   n - channel  - 65 C+ 150 C through holeTO - 247Tube       
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