MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
TQM076NH04LDCR RLG


MOSFETs 40V, 40A, Dual N-Channel Power MOSFET
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Taiwan Semiconductor 3298
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AUD 1.2048
Multiples of: 1

40 A40 V7.6 mOhmsN - Channel 2.2 V- 55 C+ 175 C46.8 WSMD/SMTPDFN56U - 8Reel , Cut TapeSi2 Channel- 16 V , + 16 V10.7 nCEnhancementAEC - Q101PerFET
S4866D


40V 33A 13mΩ 2.4V 2 N-Channel PDFN-8(3x3) MOSFETs ROHS
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HL 3293
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AUD 0.1076
Multiples of: 5

                   
BRD2N60


MOSFET N Trench 600V 2A (Tc) 4V @ 250uA 5 Ω @ 1A,10V TO-252 RoHS
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Blue Rocket 3290
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AUD 0.1898
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SSM3J334R,LF(T


MOSFET P Trench 30V 4A 2V @ 100uA 71 mΩ @ 3A,10V SOT-23F RoHS
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Toshiba 3288
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AUD 0.0715
Multiples of: 10

                   
HSBA3052


MOSFET N Channel 30V 52A 2.5V @ 250uA 6.3mO @ 20A,10V DFN5x6 RoHS
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HUASHUO 3287
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AUD 0.1965
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BSP320S H6327


Infineon Technologies MOSFET N-Ch 60V 2.9A SOT-223-3
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Infineon 3287
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AUD 0.4563
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2.9 A60 V120 mOhmsN - Channel 2.1 V- 55 C+ 150 C1.8 WSmd/SmtSOT - 223 - 4ReelSi1 Channel20 V9.7 nCEnhancement  
TSM4NB60CI C0G


MOSFET 600V, 4A, Single N-Channel Power MOSFET
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Taiwan Semiconductor 3287
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AUD 2.1154
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4 A600 V2.2 OhmsN - Channel 2.5 V- 55 C+ 150 C25 WThrough HoleI TO - 220 - 3Cut TapeSi1 Channel10 V14.5 nCEnhancement  
NTMFS5C628NLT1G


MOSFET TRENCH 6 60V NFET
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ON Semiconductor 2969
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AUD 0.5271
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150 A60 V3.3 mOhmsN - Channel 1.2 V- 55 C+ 175 C110 WSmd/SmtDFN - 5ReelSi1 Channel+/- 20 V52 nCEnhancement  
WSD20L120DN56


20V 120A 2.1mO@4.5V,20A 130W P Channel DFN-8(5.7x5.1) MOSFETs ROHS
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Winsok 924
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AUD 0.6498
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NTMFS0D7N04XMT1G


MOSFETs 40V T10M IN S08FL PACKAGE
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ON Semiconductor 182
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AUD 1.1361
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323 A40 V700 uOhmsN - Channel 3.5 V- 55 C+ 175 C134 WSMD/SMTDFN - 5Reel , Cut TapeSi1 Channel- 20 V , + 20 V72.1 nCEnhancement  
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