MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IAUCN08S7L018ATMA1


MOSFETs OptiMOS 7 Power-Transistor
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Infineon 3686
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AUD 1.7075
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210 A80 V1.8 mOhmsN - Channel 2 V- 55 C+ 175 C169 WSMD/SMTPG - TDSON - 8Reel , Cut TapeSi1 Channel20 V79.9 nCEnhancement OptiMOS
AO4606


30V 8A 18mO@10V,8A 1PCSN-Channel&1PCSP-Channel SOP-8 MOSFETs ROHS
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VBsemi Elec 3335
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AUD 0.3265
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IRFH4255DTRPBF


International Rectifier MOSFET 25V Single N-Ch HEXFET PWR 50A
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Infineon 3334
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AUD 2.2069
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30 A , 30 A25 V , 25 V4.6 mOhms , 2.1 mOhmsN - Channel 1.1 V , 1.1 V- 55 C+ 150 C31 w , 38 WSmd/SmtPQFN - 8Cut TapeSi2 Channel20 V , 20 V10 nC , 23 nCEnhancement Fastirfet
NTMFS5C468NLT1G


MOSFET T6 40V NCH LL IN SO8
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ON Semiconductor 3332
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AUD 0.2414
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37 A40 V17.6 mOhmsN - Channel 1.2 V- 55 C+ 175 C28 WSmd/SmtDFN - 5ReelSi1 Channel+/- 20 V7.3 nCEnhancement  
KCY3406A


DFN(5x6) MOSFETs ROHS
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KIA 3328
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AUD 0.2442
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AO3402


SOT-23 MOSFETs ROHS
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Bourne 3327
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AUD 0.0439
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BSC0910NDIATMA1


Transistor: N-MOSFET; unipolar; 25V; 40A; 2.5W; PG-TISON-8
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Infineon 3327
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AUD 1.2379
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            Optimos      
AO3400A


30V 5.8A 350mW 35mΩ@10V,5.8A 1.4V@250uA null SOT-23 MOSFETs ROHS
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FUXINSEMI 3307
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AUD 0.0306
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BSZ097N10NS5ATMA1


Infineon Technologies MOSFET N-Ch 100V 40A TSDSON-8
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Infineon 3305
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AUD 0.949
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40 A100 V13 mOhmsN - Channel 2.2 V- 55 C+ 150 C69 WSmd/SmtTSDSON - 8ReelSi1 Channel+/- 20 V22 nCEnhancement Optimos
DMN6017SK3-13


MOSFET MOSFETBVDSS: 41V-60V
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Diodes Incorporated 3088
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AUD 0.353
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