MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IPG20N06S2L65ATMA1


Trans MOSFET N-CH 55V 20A Automotive 8-Pin TDSON EP T/R
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Infineon 4850
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AUD 0.7147
Multiples of: 5000

                   
IAUCN10S7L040ATMA1


MOSFETs OptiMOS 7 Power-Transistor
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Infineon 3689
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AUD 1.5006
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130 A80 V3.3 mOhmsN - Channel 2 V- 55 C+ 175 C118 WSMD/SMTPG - TDSON - 8Reel , Cut TapeSi1 Channel16 V44.3 nCEnhancement OptiMOS
FDMC86244


MOSFET 150V N-Channel PowerTrench MOSFET
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ON Semiconductor 3307
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AUD 0.9009
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15 A150 V134 mOhmsn - channel   + 150 C26 Wsmd/smtMLP 3.3 x 3.3Reelsi1 channel 2.4 nC , 4.2 nC  powertrench
DMN4034SSS-13


N-Channel 40 V 5.4A (Ta) 1.56W (Ta) Surface Mount 8-SO
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Diodes Incorporated 3301
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AUD 0.3875
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5.4 A40 V34 mOhmsN - Channel  - 55 C+ 150 C1.56 WSmd/SmtSOIC - 8ReelSi1 Channel20 V4.9 nC   
IRF730APBF


MOSFET N-Chan 400V 5.5 Amp
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Vishay 3290
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AUD 1.2691
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5.5 A400 V1 OhmsN - Channel 2 V- 55 C+ 150 C74 WThrough HoleTO - 220 - 3TubeSi1 Channel10 V22 nCEnhancement  
RUL035N02FRATR


MOSFET Nch 20V Vds 3.5A 0.066Rds(on) 5.7Qg
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ROHM 3261
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AUD 0.2299
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3.5 A20 V31 mOhmsN - Channel 300 mV + 150 C1 WSmd/SmtTUMT - 6Cut TapeSi1 Channel4.5 V5.7 nCEnhancementAec - Q101 
SI3585CDV-T1-GE3


MOSFET -20V Vds 12V Vgs TSOP-6 N&P PAIR
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Vishay 3167
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AUD 0.2023
Multiples of: 5

2.1 A , 3.9 A20 V58 mOhms , 195 mOhmsN - Channel, P - Channel 600 mV- 55 C+ 150 C1.3 w , 1.4 WSmd/SmtTSOP - 6Cut TapeSi2 Channel4.5 V3.2 nC , 6 nCEnhancement Trenchfet
2N7002KQ-7-MS


60V 300mA 2.2Ω@10V,300mA 350mW N Channel SOT-23 MOSFETs ROHS
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MSKSEMI 2910
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AUD 0.0123
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WM02DN70A


Transistor: N-MOSFET x2; unipolar; TSSOP8; common drain; ESD
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Wayon 2803
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AUD 0.2299
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IPD028N06NF2SATMA1


MOSFETs N
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Infineon 1872
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AUD 1.0048
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139 A60 V2.85 mOhmsN - Channel 2.1 V- 55 C+ 175 C150 WSMD/SMTDPAK - 3 (TO - 252 - 3)Reel , Cut TapeSi1 Channel- 20 V , + 20 V68 nCEnhancement StrongIRFET
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