MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IPD030N03LF2SATMA1


MOSFETs Addresses a broad range of applications from low- to high-switching frequency
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 3612
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AUD 0.9703
Multiples of: 1

99 A30 V3.05 mOhmsN - Channel 2.35 V- 55 C+ 175 C83 WSMD/SMTTO - 252 - 3Reel , Cut TapeSi1 Channel- 20 V , + 20 V16 nCEnhancement StrongIRFET
NCE4801


30V 5A 40mΩ@10V,5A 2W 1V@250uA 2 P-Channel SOP-8 MOSFETs ROHS
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NCE Power 3611
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AUD 0.1328
Multiples of: 1

                   
FH3060G6


DFN-8-EP(3.3x3.3) MOSFETs ROHS
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Xinfeihong 3608
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AUD 0.1132
Multiples of: 5

                   
SSM6K405TU,LF


MOSFET Small Signal MOSFET N-ch VDSS=20V VGSS=+-10V ID=2.0A RDSON=0.126Ohm @ 4V in UF6 package
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Toshiba 3606
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AUD 0.1635
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2 A20 V126 mOhmsN - Channel 1 V- 55 C+ 150 C500 mWSmd/SmtUF - 6Cut TapeSi1 Channel10 V3.4 nCEnhancement U - Mosiii
LRC6N33YT1G


MOSFET N Trench 50V 200mA 1.5V @ 1mA 3.5 Ω @ 200mA,5V DFN 2020-6D RoHS
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Leshan 3603
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AUD 0.0683
Multiples of: 5

                   
IXTA6N100D2


MOSFET N-CH MOSFETS (D2) 1000V 6A
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IXYS 3602
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AUD 9.9328
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6 A1 kV2.2 Ohmsn - channel  - 55 C+ 150 C300 Wsmd/smtTO - 263 - 3Tubesi1 channel20 V95 nC   
BSZ0904NSI


MOSFET N-Ch 30V 40A TDSON-8 OptiMOS
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Infineon 3547
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AUD 0.4236
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40 A30 V3.3 mOhmsN - Channel 1.2 V- 55 C+ 150 C37 WSmd/SmtPG - TDSON - 8ReelSi1 Channel20 V23 nCEnhancement Optimos
IRFB7437PBF


MOSFET N Trench 40V 195A (Tc) 3.9V @ 150uA 2 mΩ @ 100A,10V TO-220AB RoHS
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Infineon 3511
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AUD 0.9519
Multiples of: 1

250 A40 V2 mOhmsN - Channel    230 WThrough HoleTO - 220 - 3TubeSi 20 V225 nC  Strongirfet
BUK7675-55A,118


NXP Semiconductors MOSFET TAPE13 PWR-MOS
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Nexperia 658
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AUD 0.7699
Multiples of: 1

20.3 A55 V75 mOhmsN - Channel  - 55 C+ 175 C62 WSmd/SmtSOT - 404 - 3ReelSi1 Channel20 V Enhancement  
SP2024KCTW


SOT-363 MOSFETs ROHS
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Siliup 0
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AUD 0.0262
Multiples of: 20

                   
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