MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
15N10


TO-252 MOSFETs ROHS
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TECH PUBLIC 12236
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AUD 0.1499
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IPTG025N15NM6ATMA1


MOSFETs TRENCH >=100V
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Infineon 5677
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AUD 5.2373
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264 A150 V2.5 mOhmsN - Channel 3.5 V- 55 C+ 175 C395 WSMD/SMTHSOG - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V105 nCEnhancement  
AP4008QD


40V 20A 17mΩ@10V,10A 21W 2 N-Channel DFN-8(3.2x3.2) MOSFETs ROHS
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Quan Li 5592
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AUD 0.188
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IAUCN08S7L033ATMA1


MOSFETs OptiMOS 7 Power-Transistor
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Infineon 3489
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AUD 1.1066
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130 A80 V3.3 mOhmsN - Channel 2 V- 55 C+ 175 C118 WSMD/SMTPG - TDSON - 8Reel , Cut TapeSi1 Channel16 V44.3 nCEnhancement OptiMOS
RQ3L270BKFRATCB


MOSFETs Nch 60V 27A, HSMT8AG, Power MOSFET for Automotive
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ROHM 3371
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AUD 0.9465
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27 A60 V14.6 mOhmsN - Channel 2.5 V- 55 C+ 150 C69 WSMD/SMTH SMT - 8AGReel , Cut TapeSi1 Channel- 20 V , + 20 V15 nCEnhancement  
RF9G120BKFRATCR


MOSFETs Nch 40V 12A, DFN2020Y7LSAA, Power MOSFET for Automotive AEC-Q101
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ROHM 3370
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AUD 0.7006
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12 A40 V17.5 mOhmsN - Channel 2.5 V- 55 C+ 150 C23 WSMD/SMTDFN - 6Reel , Cut TapeSi1 Channel- 20 V , + 20 V8.5 nCEnhancement  
SQJ974EP-T1_BE3


MOSFETs DUAL N-CHANNEL 100-V (D-S) 175C MOSFET
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Vishay 3369
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AUD 0.8529
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           Reel , Cut TapeSi      
VN2460N3-G-P014


Microchip Technology MOSFET N-CH Enhancmnt Mode MOSFET
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Microchip 3369
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AUD 1.9532
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160 mA600 V25 OhmsN - Channel20 V - 55 C+ 150 C1 WThrough HoleTO - 92 - 3Bulk 1 Channel20 V Enhancement  
AS2300


MOSFET N Trench 20V 4.2A 1.2V @ 250uA 30 mΩ @ 4.2A,4.5V SOT-23 (SOT-23-3) RoHS
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AnBon 3133
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AUD 0.0379
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IAUCN08S7N024ATMA1


MOSFETs MOSFET_(75V 120V(
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Infineon 2002
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AUD 1.4645
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165 A80 V2.4 mOhmsN - Channel 3.2 V- 55 C+ 175 C148 WSMD/SMTTDSON - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V51.5 nCEnhancementAEC - Q101OptiMOS
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