MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
PMV30UN2R


N-Channel 20 V 4.2A (Ta) 490mW (Ta), 5W (Tc) Surface Mount TO-236AB
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Nexperia 61110
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AUD 0.2538
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5.4 A20 V24 mOhmsN - Channel 400 mV- 55 C+ 150 C1 WSmd/SmtTO - 236AB - 3ReelSi1 Channel12 V6.2 nCEnhancement  
DMN2028USS-13


N-Channel 20 V 7.3A (Ta) 1.56W (Ta) Surface Mount 8-SO
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Diodes Incorporated 3912
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AUD 0.3003
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9.8 A20 V20 mOhmsN - Channel  - 55 C+ 150 C1.56 WSmd/SmtSO - 8Cut TapeSi1 Channel12 V11.6 nCEnhancement  
FDMC008N08C


MOSFET 80V20V N-Channel PTNG MOSFET
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ON Semiconductor 3912
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AUD 1.4384
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60 A80 V6.3 mOhmsN - Channel 2 V- 55 C+ 150 C57 WSmd/SmtPOWER - 33 - 8Cut TapeSi1 Channel20 V29 nCEnhancement  
BSC031N06NS3 G


MOSFET OptiMOS3 PWR-MOSFET N-CH
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Infineon 3910
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AUD 1.7487
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100 A60 V3.1 mOhmsN - Channel  - 55 C+ 150 C2.5 WSmd/SmtTDSONReelSi1 Channel20 V Enhancement Optimos
FDPC8014AS


MOSFET PT9 N 30/12 & PT9 N 25/12S inPowerClip56
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ON Semiconductor 3907
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AUD 2.127
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59 A , 159 A25 v , 25 V5.3 mOhms , 1.5 mOhmsN - Channel 800 mV , 1 V- 55 C+ 150 C21 w , 37 WSmd/SmtPowerclip - 56 - 8ReelSi2 Channel+/- 12 v , +/- 12 V25 nC , 97 nCEnhancement Syncfet Power Clip
SIHD14N60E-GE3


MOSFET N-Ch 650V Vds 8nC Qgs
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Vishay 3905
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AUD 1.8527
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13 A600 V0.269 OhmsN - Channel 4 V- 55 C+ 150 C147 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel30 V32 nCEnhancement  
Si7850DP(XBLW)


60V 30A 1 N-Channel DFN-8L(5x6) MOSFETs ROHS
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XBLW 3904
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AUD 0.1877
Multiples of: 5

                   
Hot IRF3710STRLPBF


MOSFET N Trench 100V 57A 4V @ 250uA 23 mΩ @28A,10V TO-263-2 RoHS
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Infineon 3861
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AUD 0.9814
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57 A100 V23 mOhmsN - Channel 4 V- 55 C+ 175 C200 WSmd/SmtD2PAKReelSi1 Channel20 V130 nC   
IRFHS9301TRPBF


Transistor: P-MOSFET; unipolar; -30V; -6A; 2.1W; PQFN2X2
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Infineon 2942
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AUD 0.316
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13 A30 V65 mOhmsP - Channel    2.1 WSmd/SmtPQFN - 6ReelSi1 Channel20 V6.9 nC   
SI1411DH-T1-GE3


MOSFET -150V Vds 20V Vgs SC70-6
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Vishay 2910
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AUD 0.5663
Multiples of: 3000

         Smd/SmtSOT - 363 - 6Cut TapeSi     Trenchfet
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