MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IPTC012N08NM5ATMA1


MOSFET TRENCH 40<-<100V
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Infineon 3349
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AUD 7.3381
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396 A80 V1.2 mOhmsN - Channel 3.8 V- 55 C+ 175 C375 WSMD/SMTHDSOP - 16Reel , Cut TapeSi1 Channel- 20 V , + 20 V175 nCEnhancement  
BSZ097N04LS G


Infineon Technologies MOSFET N-Ch 40V 40A TSDSON-8 OptiMOS 3
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Infineon 3349
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AUD 0.4262
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12 A40 V9.7 mOhmsN - Channel20 V1.2 V- 55 C+ 150 C2.1 WSmd/SmtTSDSON - 8ReelSi1 Channel10 V18 nCEnhancement Optimos
RQ7E055ATTCR


MOSFET Pch -30V -5.5A Si MOSFET
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ROHM 3348
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AUD 0.7495
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5.5 A30 V19.3 mOhmsP - Channel 2.5 V- 55 C+ 150 C1.5 WSmd/SmtT SMT - 8Cut TapeSi1 Channel20 V18.8 nCEnhancement  
BSC070N10NS3GATMA1


Transistor: N-MOSFET; unipolar; 100V; 90A; 114W; PG-TDSON-8
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Infineon 3347
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AUD 0.8638
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            Optimos 3      
BSC030N04NSGATMA1


Transistor: N-MOSFET; unipolar; 40V; 100A; 83W; PG-TDSON-8
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Infineon 3346
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AUD 0.5872
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            Optimos 3      
VBE1405


MOSFET N Trench 40V 85A 2.5V @ 250uA 7.5 mΩ @ 20A,4.5V TO-252 RoHS
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VBsemi Elec 3346
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AUD 0.6403
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MCAC65N06YHE3-TP


MOSFETs
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Micro Commercial Components (MCC) 3341
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AUD 0.8701
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65 A60 V5.2 mOhmsN - Channel 2.5 V- 55 C+ 175 C100 WSMD/SMTDFN - 5060 - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V34.5 nCEnhancement  
NTMFS4C06NAT1G


MOSFET NFET SO8FL 30V 69A 4
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ON Semiconductor 3338
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AUD 0.5
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         Smd/SmtSO - FL - 8Cut TapeSi      
AUIRFS8409


Transistor: N-MOSFET; unipolar; 40V; 195A; 375W; D2PAK
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Infineon 3337
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AUD 4.1511
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195 A40 V1.2 mOhmsN - Channel20 V2.2 V To 3.9 V- 55 C+ 175 C375 WSmd/SmtD2PAK - 2TubeSi1 Channel20 V300 nCEnhancementAec - Q101Coolirfet
BSC066N06NS


Infineon Technologies MOSFET
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Infineon 1637
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AUD 0.7618
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64 A60 V6.6 mOhmsN - Channel+/- 20 V2.8 V- 55 C+ 150 C46 WSmd/SmtTDSON - 8Reel-1 Channel10 V17 nCEnhancement Optimos
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