MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SI7145DP-T1-GE3


Vishay Semiconductors MOSFET -30V 2.6mOhm10V 60A P-Ch G-III
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Vishay 3448
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AUD 1.9811
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- 60 A- 30 V2.6 mOhmsP - Channel20 V - 55 C+ 150 C104 WSmd/SmtSO - 8Reel   129 nCEnhancement  
IRFH9310TRPBF


P-Channel 30 V 21A (Ta), 40A (Tc) 3.1W (Ta) Surface Mount PQFN (5x6)
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Infineon 3327
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AUD 1.9015
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21 A30 V4.6 mOhmsP - Channel    3.1 WSmd/SmtPQFN - 8ReelSi1 Channel20 V165 nC   
BSO110N03MS G


MOSFET OptiMOS 3 M-Series PWR-MOSFET N-CH
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Infineon 3324
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AUD 0.7119
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12.1 A30 V9.2 mOhmsN - Channel 1 V- 55 C+ 150 C2.5 WSmd/SmtDSOReelSi1 Channel20 V20 nCEnhancement Optimos
PJQ4546P-AU_R2_002A1


MOSFETs 40V N-Channel Enhancement Mode MOSFET
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Panjit 3322
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AUD 0.5378
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64 A40 V5.6 mOhmsN - Channel 2.3 V- 55 C+ 175 C42 WSMD/SMTDFN - 3333 - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V20 nCEnhancementAEC - Q101 
DMN6069SFGQ-13


MOSFET MOSFET BVDSS: 41V-60V
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Diodes Incorporated 3319
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AUD 0.3907
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18 A60 V39 mOhmsN - Channel 1 V- 55 C+ 150 C2.4 WSmd/SmtPowerdi3333 - 8Cut TapeSi1 Channel20 V25 nCEnhancementAec - Q101 
BSZ086P03NS3E G


Infineon Technologies MOSFET P-Ch -30V 13.5A TSDSON-8 OptiMOS P3
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Infineon 3319
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AUD 0.5659
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13.5 A- 30 V8.6 mOhmsP - Channel25 V- 3.1 V- 55 C+ 150 C69 WSmd/SmtTSDSON - 8ReelSi1 Channel25 V21.4 nCEnhancement Optimos
WSD3067DN56


DFN-8(5.2x5.5) MOSFETs ROHS
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Winsok 3264
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AUD 0.3284
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FDB2710


Transistor: N-MOSFET; unipolar; 250V; 50A; 260W; D2PAK
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ON Semiconductor 3162
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AUD 4.2358
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SSM6N15AFU,LF


Mosfet Array 2 N-Channel (Dual) 30V 100mA 300mW Surface Mount US6
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Toshiba 2284
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AUD 0.0931
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100 mA30 V3.6 OhmsN - Channel    300 mWSmd/SmtSOT - 363 - 6Cut TapeSi2 Channel20 V    
2V7002LT1G


N-Channel 60 V 115mA (Tc) 225mW (Ta) Surface Mount SOT-23-3 (TO-236)
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ON Semiconductor 48
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AUD 0.0463
Multiples of: 10

115 mA60 V7.5 OhmsN - Channel20 V1 v to 2.5 V- 55 C+ 150 C300 mWSmd/SmtSOT - 23 - 3ReelSi1 Channel10 V EnhancementAec - Q101 
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