MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
RD3G03BBGTL1


MOSFETs RD3G03BBG is a power MOSFET with low-on resistance and High power package, suitable for switching.
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ROHM 3587
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AUD 1.2133
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65 A40 V6.5 mOhmsN - Channel 2.5 V- 55 C+ 150 C50 WSMD/SMTDPAK - 3 (TO - 252 - 3)Reel , Cut TapeSi1 Channel- 20 V , + 20 V18.2 nCEnhancement  
R6009ENXC7G


MOSFET 600V POWER MOSFET
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ROHM 3586
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AUD 2.5192
Multiples of: 1

9 A600 V535 mOhmsN - Channel 4 V- 55 C+ 155 C48 WThrough HoleTO - 220FM - 3TubeSi1 Channel- 20 V , + 20 V , - 30 V , + 30 V23 nCEnhancement  
BSC025N03MSGATMA1


Transistor: N-MOSFET; unipolar; 30V; 23A; 83W; PG-TDSON-8
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Infineon 3585
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AUD 0.3841
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            Optimos 3      
SSM6J213FE(TE85L,F


Toshiba MOSFET P-Ch U-MOS VI FET ID -2.6A -20V 290pF
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Toshiba 3585
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AUD 0.3838
Multiples of: 1

- 2.6 A- 20 V250 mOhmsP - Channel - 0.3 v to - 1 V- 55 C+ 150 C500 mWSmd/SmtSOT - 23 - 6ReelSi1 Channel8 V4.7 nC   
SP60P60P8


SOP-8 MOSFETs ROHS
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Siliup 3584
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AUD 0.1497
Multiples of: 5

                   
FDML7610S


MOSFET 30V N-Channel PowerTrench
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ON Semiconductor 3580
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AUD 1.0196
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30 A30 V7.5 mOhmsN - Channel  - 55 C+ 150 C2.2 WSmd/SmtMLP 3 x 4.5ReelSi2 Channel20 V20 nC , 43 nC  Power Stage Powertrench Syncfet
AONS32304


30V 150A 2.4mΩ@10V 2.5V N Channel DFN5x6-8L MOSFETs ROHS
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MSKSEMI 3569
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AUD 0.3409
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BSC014N06NSATMA1


Transistor: N-MOSFET; unipolar; 60V; 100A; 156W; PG-TDSON-8
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Infineon 3231
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AUD 2.4955
Multiples of: 1

            Optimos      
IRFB4115PBFXKMA1


MOSFETs TRENCH >=100V
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Infineon 2533
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AUD 1.9045
Multiples of: 1

104 A150 V11 mOhmsN - Channel 5 V- 55 C+ 175 C380 WThrough HoleTO - 220AB - 3TubeSi1 Channel- 20 V , + 20 V77 nCEnhancement  
SQ2301CES-T1_GE3


MOSFETs P-CHANNEL 20-V (D-S) 175C MOSFET
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Vishay 2093
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AUD 0.1445
Multiples of: 1

3.9 A20 V120 mOhmsP - Channel 1.5 V- 55 C+ 175 C3 WSMD/SMTSOT - 23 - 3 Si1 Channel 5.4 nCEnhancement  
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