MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IAUCN10S7N040ATMA1


MOSFETs MOSFET_(75V 120V(
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Infineon 4496
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AUD 1.5613
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130 A100 V4 mOhmsN - Channel 3.2 V- 55 C+ 175 C142 WSMD/SMTTDSON - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V39.3 nCEnhancement  
TPM7R10CQ5,LQ


MOSFETs N-ch MOSFET, 150 V, 0.0071 ohma.10V, Qrr=43nCa.100A/ s, SOP Advance(E), U-MOS?-H
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Toshiba 4089
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AUD 2.0358
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120 A150 V7.1 mOhmsN - Channel 4.5 V + 150 C250 WSMD/SMTSOP - 8Reel , Cut TapeSi1 Channel20 V57 nCEnhancement  
IQEH54NE2LM7UCGATMA1


MOSFETs OptiMOS 7 Power -Transistor, 25 V
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Infineon 3854
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AUD 1.5219
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406 A25 V540 uOhmsN - Channel 2 V- 55 C+ 175 C150 WSMD/SMT Reel , Cut TapeSi1 Channel16 V27 nCEnhancement OptiMOS
IAUZN10S7L289ATMA1


MOSFETs OptiMOS 7 Power-Transistor
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Infineon 3836
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AUD 0.4925
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27 A100 V28.9 mOhmsN - Channel 2 V- 55 C+ 175 C45 WSMD/SMTPG - TDSON - 8Reel , Cut TapeSi1 Channel16 V10.9 nCEnhancement OptiMOS
ISA150233C03LMDSXTMA1


MOSFETs OptiMOS Dual power MOSFET 30V
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Infineon 3684
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AUD 0.3973
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8.8 A , 10.2 A30 V15 mOhms , 23.3 mOhmsN - Channel, P - Channel 2.7 V- 55 C+ 150 C2.5 WSMD/SMTDSO - 8Reel , Cut TapeSi2 Channel- 20 V , + 20 V12 nC , 14 nCEnhancement OptiMOS
IPD60R280P7ATMA1


Transistor: N-MOSFET; unipolar; 600V; 8A; 53W; PG-TO252-3
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Infineon 3389
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AUD 0.8685
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            Coolmos P7      
IPP037N08N3GXKSA1


Transistor: N-MOSFET; unipolar; 80V; 100A; 214W; PG-TO220-3
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Infineon 3389
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AUD 2.0194
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            Optimos 3      
IAUZN10S7N078ATMA1


MOSFETs OptiMOS 7 Power-Transistor
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Infineon 3387
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AUD 0.9604
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76 A100 V7.8 mOhmsN - Channel 3.2 V- 55 C+ 175 C94 WSMD/SMTPG - TDSON - 8Reel , Cut TapeSi1 Channel20 V22.2 nCEnhancement OptiMOS
BSP92P H6327


Infineon Technologies MOSFET P-Ch -250V -260mA SOT-223-4
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Infineon 3387
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AUD 0.2709
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260 mA250 V7.5 OhmsP - Channel 2 V- 55 C+ 150 C1.8 WSmd/SmtSOT - 223 - 4ReelSi1 Channel20 V- 5.4 nCEnhancement  
DMNH6012SPSQ-13


MOSFET MOSFET BVDSS: 41V-60V
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Diodes Incorporated 3161
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AUD 0.9588
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         Smd/SmtPowerdi5060 - 8Cut TapeSi    Aec - Q101 
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