MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
FSS2301M A1SHB


20V 2.8A 1000mW 90mΩ@4.5V,2.7A 0.7V@250uA P Channel 200pF@10V +150℃@(Tj) SOT-23 MOSFETs ROHS
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FOSAN 10049
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AUD 0.0248
Multiples of: 20

                   
HT8KC6TB1


MOSFETs 60V 15A, Dual Nch+Nch, HSMT8, Power MOSFET: HT8KC6 is a low on-resistance MOSFET ideal for switching applications.
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ROHM 3642
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AUD 1.0787
Multiples of: 1

15 A60 V29 mOhmsN - Channel 2.5 V- 55 C+ 150 C14 WSMD/SMTH SMT - 8Reel , Cut TapeSi2 Channel- 20 V , + 20 V7.6 nCEnhancement  
ASDM20P13S-R


SOP-8 MOSFETs ROHS
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Ascend 3637
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AUD 0.1245
Multiples of: 5

                   
MCQ4410-TP


MOSFET N-Channel MOSFET, SOP-8 package
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Micro Commercial Components (MCC) 3634
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AUD 0.2364
Multiples of: 1

7.5 A30 V9 mOhmsN - Channel 1 V- 55 C+ 150 C1.4 WSmd/SmtSOP - 8Cut TapeSi1 Channel12 V40 nCEnhancement  
TSM60NC980CH C5G


MOSFETs 600V, 4A, Single N-Channel Power MOSFET
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Taiwan Semiconductor 3634
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AUD 0.8751
Multiples of: 1

4 A600 V980 mOhmsN - Channel 5 V- 55 C+ 150 C57 WThrough HoleTO - 251 - 3TubeSi1 Channel- 20 V , + 20 V11 nCEnhancement  
IPG20N04S4L-08


Infineon Technologies MOSFET N-Ch 40V 20A TDSON-8 OptiMOS-T2
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Infineon 3634
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AUD 0.9375
Multiples of: 1

20 A40 V8.2 mOhmsN - Channel 1.2 V- 55 C+ 175 C54 WSmd/SmtTDSON - 8ReelSi2 Channel16 V39 nC , 39 nCEnhancementAec - Q101Optimos
HSM4435


MOSFET P Channel 30V 9.5A 2.5V @ 250uA 20mO @ 6A,10V SOP-8 RoHS
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HUASHUO 3632
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AUD 0.1032
Multiples of: 5

                   
JMTG3005A


PDFN5x6-8L MOSFETs ROHS
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JieJie 3627
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AUD 0.1775
Multiples of: 5

                   
TPH4R008NH1,LQ(M


SOP MOSFETs ROHS
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Toshiba 3569
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AUD 1.5408
Multiples of: 1

                   
ASDM30P09ZB-R


30V 9A 16mΩ@10V,5A 1.8W 1.6V@250uA 95pF@15V P Channel 1.3nF@15V 20nC@1V -55℃~+150℃@(Tj) SOT-23-3 MOSFETs ROHS
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Ascend 2250
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AUD 0.0772
Multiples of: 10

                   
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