MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IPT039N15N5ATMA1


MOSFET
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Infineon 3988
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AUD 4.1381
Multiples of: 1

190 A150 V4.3 mOhmsN - Channel 4.6 V- 55 C+ 175 C319 WSMD/SMTHSOF - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V78 nCEnhancement  
AP2714QD


40V 18A 27mΩ@20V,18A 1PCSN-Channel&1PCSP-Channel PDFN3x3 MOSFETs ROHS
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Quan Li 3986
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AUD 0.3906
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HSBB4062


MOSFET N Channel 40V 33A 2.4V @ 250uA 15mΩ @ 8A,10V PRPAK3*3 RoHS
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HUASHUO 3985
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AUD 0.168
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SUD19P06-60-BE3


MOSFET P-CHANNEL 60V D-S
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Vishay 3985
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AUD 0.8923
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30 A60 V60 mOhmsP - Channel 3 V- 55 C+ 150 C38.5 WSMD/SMTTO - 252 - 3Trenchfet , Cut Tape , ReelSi1 Channel- 20 V , + 20 V40 nCEnhancement TrenchFET
HSU60P03


MOSFET P Channel 30V 60A 2.5V @ 250uA 10mΩ @ 30A,10V TO-252 RoHS
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HUASHUO 3984
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AUD 0.2708
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HSBB6056


MOSFET N Channel 60V 30A 2.3V @ 250uA 8.5mΩ @ 15A,10V PRPAK3*3 RoHS
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HUASHUO 3982
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AUD 0.3066
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BSC030N03MSGATMA1


Transistor: N-MOSFET; unipolar; 30V; 100A; 69W; PG-TDSON-8
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Infineon 3981
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AUD 0.5343
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            Optimos 3      
AO3420


MOSFET N-CH 20V 6A SOT23
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Alpha & Omega 3970
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AUD 0.1283
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           -       
IRFP460APBF


N-Channel 500 V 20A (Tc) 280W (Tc) Through Hole TO-247AC
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Vishay 3477
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AUD 2.304
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20 A500 V270 mOhmsN - Channel 2 V- 55 C+ 150 C280 WThrough HoleTO - 247 - 3TubeSi1 Channel10 V105 nCEnhancement  
SUP53P06-20-E3


MOSFET 60V 53A 104.2W 19.5mohm @ 10V
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Vishay 2962
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AUD 2.4444
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53 A60 V16 mOhmsP - Channel 3 V- 55 C+ 150 C104.2 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V115 nCEnhancement Trenchfet
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First...571572573574575...

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