MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
DMN10H170SFG-7


Diodes Incorporated MOSFET N-Ch Enh Mode FET 100Vdss 20Vgss
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Diodes Incorporated 3880
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AUD 0.3079
Multiples of: 2000

2.9 A100 V122 mOhmsN - Channel 3 V- 55 C+ 150 C2 WSmd/SmtPowerdi3333Reel-1 Channel+/- 20 V14.9 nCEnhancement  
LN06N060TZHG


60V 4.5A 60m 1PCSNChannel SOT-223 MOSFETs ROHS
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Leshan 3880
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AUD 0.3149
Multiples of: 5

                   
IRFHS8242TRPBF


International Rectifier MOSFET 25V 1 N-CH HEXFET 13mOhms 4.3nC
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Infineon 3880
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AUD 0.3204
Multiples of: 1

9.9 A25 V17 mOhmsN - Channel20 V1.8 V- 55 C+ 150 C2.1 WSmd/SmtPQFN - 6ReelSi1 Channel20 V4.3 nC   
DMP2008UFG-7


Diodes Incorporated MOSFET 20V P-CH MOSFET
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Diodes Incorporated 3880
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AUD 0.3244
Multiples of: 2000

- 12 A- 20 V17 mOhmsP - Channel8 V- 0.4 v to - 1 V- 55 C+ 150 C2.2 WSmd/SmtPowerdi3333 - 8ReelSi1 Channel- 4.5 V75 nCEnhancement  
STN3NF06


MOSFET N-Ch 30 Volt 3 Amp
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STMicroelectronics 3880
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AUD 0.369
Multiples of: 4000

   N - Channel  - 55 C+ 150 C Smd/SmtSOT - 223Reel       
IRFH8311TRPBF


International Rectifier MOSFET MOSFET, 30V, 50A, 2 33nC Qg, PQFN5x6
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Infineon 3880
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AUD 0.3161
Multiples of: 4000

80 A30 V2.1 mOhmsN - Channel 1.35 V To 2.35 V- 55 C+ 150 C3.6 WSmd/SmtPQFN - 8ReelSi1 Channel20 V30 nCEnhancement  
HSM4P10D


100V 4A 105m@10V,4A 2W 1.8V@250uA 2 P-Channel SOP-8 MOSFETs ROHS
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HUASHUO 3880
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AUD 0.3756
Multiples of: 5

                   
CEM6428-JSM


SOP-8 MOSFETs ROHS
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JSMSEMI 3880
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AUD 0.3771
Multiples of: 1

                   
ZVN0545GTA


N-Channel 450 V 140mA (Ta) 2W (Ta) Surface Mount SOT-223-3
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Diodes Incorporated 3880
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AUD 0.379
Multiples of: 1000

140 mA450 V50 OhmsN - channel  - 55 C+ 150 C2 WSmd/smtSOT - 223ReelSi1 Channel20 V Enhancement  
AOD2N60


N-Channel 600 V 2A (Tc) 56.8W (Tc) Surface Mount TO-252 (DPAK)
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Alpha & Omega 3836
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AUD 0.4082
Multiples of: 1

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