MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Id - Continuous Drain Current
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
FQPF7N80C


Fairchild Semiconductor MOSFET 800V N-Ch Q-FET advance C-Series
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ON Semiconductor 3261
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AUD 1.591
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6.6 A800 V1.9 OhmsN - Channel30 V - 55 C+ 150 C56 WThrough HoleTO - 220 - 3TubeSi1 Channel30 V Enhancement Qfet
HXY4435S


30V 9A 20mΩ@10V,7A P Channel SOP-8 MOSFETs ROHS
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HXY MOS 3260
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AUD 0.107
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WSD100N06GDN56


60V 100A 3mΩ@10V,20A 83W N Channel DFN-8-EP(5.8x5.3) MOSFETs ROHS
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Winsok 3259
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AUD 1.1724
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PMDXB950UPEZ


NXP Semiconductors MOSFET 20 V, dual P-channel Trench MOSFET
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Nexperia 3254
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AUD 0.2789
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- 500 mA , - 500 mA- 20 v , - 20 V5 Ohms , 5 OhmsP - Channel - 450 mV , - 450 mV- 55 C+ 150 C380 mWSmd/SmtDFN1010B - 6ReelSi2 Channel+/- 8 v , +/- 8 V1.19 nCEnhancement  
IRF840SPBF


N-Channel 500 V 8A (Tc) 3.1W (Ta), 125W (Tc) Surface Mount D²PAK (TO-263)
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Vishay 3254
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AUD 1.3709
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8 A500 V850 mOhmsN - Channel 2 V- 55 C+ 150 C125 WSmd/SmtTO - 263 - 3TubeSi1 Channel10 V63 nCEnhancement  
IRF5803TRPBF


MOSFET P Trench 40V 3.4A 3V @ 250uA 112 mΩ @ 3.4A,10V TSOP-6 RoHS
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Infineon 3249
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AUD 0.1834
Multiples of: 5

            Hexfet®      
SPP15P10PHXKSA1


MOSFET SMALL SIGNAL+P-CH
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Infineon 3249
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AUD 1.0039
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   p - channel     through holeTO - 220 - 3Tubesi1 channel     
IPT012N08N5ATMA1


Transistor: N-MOSFET; unipolar; 80V; 300A; 375W; PG-HSOF-8-1
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Infineon 2948
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AUD 3.5791
Multiples of: 1

            Optimos 5      
SI2307CDS-T1-GE3


P-Channel 30 V 3.5A (Tc) 1.1W (Ta), 1.8W (Tc) Surface Mount SOT-23-3 (TO-236)
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Vishay 2473
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AUD 0.133
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3.5 A30 V88 mOhmsP - Channel 1 V- 55 C+ 150 C1.8 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V4.1 nCEnhancement Trenchfet
BSS138


MOSFET SOT-23 N-CH LOGIC
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ON Semiconductor 388
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AUD 0.0347
Multiples of: 20

220 mA50 V3.5 OhmsN - Channel20 V - 55 C+ 150 C360 mWSmd/SmtSOT - 23 - 3Reel    Enhancement  
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