MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SIR188LDP-T1-RE3


MOSFETs N-CHANNEL 60-V (D-S)
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Vishay 7418
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AUD 0.9309
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93.6 A60 V3.75 mOhmsN - Channel 2.5 V- 55 C+ 150 C SMD/SMTSO - 8 Si1 Channel- 10 V , + 10 V34.6 nCEnhancement PowerPAK
SI3415-TP


MOSFET N-Channel Enhancement Mode Field Effect Transistor
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Micro Commercial Components (MCC) 3225
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AUD 0.276
Multiples of: 5

4 A20 V50 mOhmsP - Channel 1 V- 55 C+ 150 C350 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel8 V17.2 nCEnhancement  
STU10N60M2


STMicroelectronics MOSFET N-CH 600V 0.56Ohm 7.5A MDmesh M2
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STMicroelectronics 3222
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AUD 1.1148
Multiples of: 1

7.5 A600 V560 mOhmsn - channel 3 V- 55 C+ 150 C85 Wthrough holeIPAK - 3Tubesi1 channel25 V13.5 nC  mdmesh
DMC1229UFDB-7


Diodes Incorporated MOSFET Comp ENH Mode FET 12V Vdss 8V VGss
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Diodes Incorporated 3221
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AUD 0.2561
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- 3.8 A , 5.6 A- 12 v , 12 V29 mOhms , 61 mOhmsN - Channel, P - Channel - 1 v , 1 V- 55 C+ 150 C1.4 WSmd/SmtU - DFN2020 - 6 TYPE BReel-2 Channel+/- 8 V10.5 nC , 10.7 nCEnhancement  
SPD15P10PGBTMA1


MOSFET P-Ch -100V 15A DPAK-2
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Infineon 3221
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AUD 1.0113
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15 A100 V160 mOhmsP - Channel 4 V- 55 C+ 175 C128 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel20 V48 nCEnhancement  
IRFB4115PBF


Transistor: N-MOSFET; unipolar; 150V; 74A; 380W; TO220AB
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Infineon 3220
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AUD 0.789
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   N - Channel  - 55 C+ 175 C Through HoleTO - 220 - 3Tube       
FDV304P-NL-VB


20V 5A 35mΩ@10V P Channel SOT-23 MOSFETs ROHS
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VBsemi Elec 3219
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AUD 0.0656
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SH8MA4TB1


MOSFET 30V NCH+PCH POWER
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ROHM 3212
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AUD 0.6699
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9 A , 8.5 A30 V21 mOhms , 29.6 mOhmsN - Channel, P - Channel 1 V- 55 C+ 150 C3 WSmd/SmtSOP - 8Cut TapeSi2 Channel20 V15.5 nC , 19.6 nCEnhancement  
FDMS86263P


MOSFET PT5 150/25V Pch Pwr Trench MOSFET
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ON Semiconductor 2977
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AUD 0.7999
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- 22 A- 150 V43 mOhmsP - Channel25 V- 4 V- 55 C+ 150 C104 WSmd/SmtPOWER 56 - 8ReelSi1 Channel25 V45 nCEnhancement Powertrench
BSC252N10NSF G


MOSFET OptiMOS2 PWR Transistor N-CH
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Infineon 1551
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AUD 0.7175
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40 A100 V19.5 mOhmsN - Channel 2 V- 55 C+ 150 C78 WSmd/SmtTDSON - 8ReelSi1 Channel20 V17 nCEnhancement Optimos
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