MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
STF20NF20


Transistor: N-MOSFET; unipolar; 200V; 11A; 30W; TO220FP
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STMicroelectronics 3880
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AUD 1.1786
Multiples of: 1000

            Mdmesh      
IPD65R660CFDAATMA1


MOSFET COOL MOS
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Infineon 3880
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AUD 1.2482
Multiples of: 1

          TO - 252 - 3ReelSi     Coolmos
IRFI7446GPBF


MOSFET TRENCH MOSFET - PACKAGE
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Infineon 3880
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AUD 1.5992
Multiples of: 1

80 A40 V2.6 mOhmsn - channel 2.2 V- 55 C+ 175 C40.5 Wthrough holeTO - 220 - 3Tubesi1 channel20 V90 nCenhancement strongirfet
FDB3652


Transistor: N-MOSFET; unipolar; 100V; 61A; 150W; D2PAK
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 3880
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AUD 1.8411
Multiples of: 800

            Powertrench®      
STF6N80K5


STMicroelectronics MOSFET
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STMicroelectronics 3880
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AUD 1.6659
Multiples of: 1000

4.5 A800 V1.6 Ohmsn - channel 4 V- 55 C+ 150 C25 Wthrough holeTO - 220 - 3Tubesi1 channel+/- 30 V13 nCenhancement mdmesh
IRFH5006TRPBF


Transistor: N-MOSFET; unipolar; 60V; 21A; 250W; PQFN5X6
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Infineon 3880
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AUD 1.9077
Multiples of: 4000

100 A60 V4.1 mOhmsN - Channel 2 V- 55 C+ 150 C156 WSmd/SmtPQFN - 8 (5X6 mm)ReelSi1 Channel20 V69 nC   
IPB80N08S2L07ATMA1


Transistor: N-MOSFET; unipolar; 75V; 80A; 300W; PG-TO263-3
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Infineon 3880
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AUD 1.548
Multiples of: 4000

            optimos      
IAUAN04S7N006AUMA1


MOSFETs N
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Infineon 3880
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AUD 2.0016
Multiples of: 1

410 A40 V570 uOhmsN - Channel 3 V- 55 C+ 175 C179 WSMD/SMTHSOF - 5 - 1Reel , Cut TapeSi1 Channel- 20 V , + 20 V94 nCEnhancement OptiMOS
FDB52N20TM


Transistor: N-MOSFET; unipolar; 200V; 52A; 357W; D2PAK
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ON Semiconductor 3880
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AUD 2.0238
Multiples of: 800

   N Channel               
FQP6N70


Trans MOSFET N-CH 700V 6.2A 3-Pin(3+Tab) TO-220AB Rail
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ON Semiconductor 3880
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AUD 2.076
Multiples of: 1

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