MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SWHA065R03VLT


30V 58A 6.4mΩ DFN(5x6) MOSFETs ROHS
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Sam&wing 3216
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AUD 0.1171
Multiples of: 5

                   
SI8424CDB-T1-E1


MOSFET 8V 10A 2.7W 20mOhms @ 4.5V
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Vishay 3213
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AUD 0.2758
Multiples of: 1

   N - Channel     Smd/SmtMICRO - FOOT - 4Reel      Microfoot Trenchfet
DMP31D0UFB4-7B


Diodes Incorporated MOSFET MOSFET BVDSS: 25V-30 X2-DFN1006-3 T&R 10K
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Diodes Incorporated 3210
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AUD 0.1441
Multiples of: 5

760 mA30 V2 OhmsP - Channel 1.1 V- 55 C+ 150 C460 mWSmd/SmtX2 - DFN1006 - 3ReelSi1 Channel8 V1.5 nCEnhancement  
PSMN4R3-80PS,127


MOSFET N-Ch 80V 4.3 mOhms
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Nexperia 3209
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AUD 5.7369
Multiples of: 1

120 A80 V4.3 mOhmsn - channel 3 V- 55 C+ 175 C306 Wthrough holeTO - 220 - 3Tubesi1 channel20 V104 nC   
HSST3134


20V 900mA 250mW 400mΩ@4.5V,800mA 1V@250uA N Channel SOT-523 MOSFETs ROHS
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HUASHUO 3208
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AUD 0.0411
Multiples of: 10

                   
DMP2110U-7


MOSFET MOSFET BVDSS: 8V~24V SOT23 T&R 3K
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Diodes Incorporated 3205
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AUD 0.1067
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3.5 A20 V80 mOhmsP - Channel 1 V- 55 C+ 150 C1.2 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V6 nCEnhancement  
TN2640LG-G


Transistor: N-MOSFET; unipolar; 400V; 2A; 1.3W; SO8
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Microchip 3201
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AUD 1.8284
Multiples of: 1

260 mA400 V5 OhmsN - Channel  - 55 C+ 150 C1.3 WSmd/SmtSOIC - 8ReelSi1 Channel20 V Enhancement  
FDC5614P


SOT-23-6 MOSFETs ROHS
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JSMSEMI 3133
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AUD 0.2192
Multiples of: 5

                   
NVMFS5C670NLT1G


MOSFET NFET SO8FL 60V 71A 6.1M
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ON Semiconductor 3129
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AUD 1.1837
Multiples of: 1

71 A60 V8.8 mOhmsN - Channel 1.2 V- 55 C+ 175 C61 WSmd/SmtSO - FL - 8Tape And ReelSi1 Channel20 V9 nCEnhancementAec - Q101 
IPD047N03LF2SATMA1


MOSFETs Addresses a broad range of applications from low- to high-switching frequency
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Infineon 2348
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AUD 0.4367
Multiples of: 1

71 A30 V4.7 mOhmsN - Channel 2.35 V- 55 C+ 175 C65 WSMD/SMTTO - 252 - 3Reel , Cut TapeSi1 Channel- 20 V , + 20 V10 nCEnhancement StrongIRFET
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