MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRFS4410ZTRLPBF


MOSFET N Trench 100V 97A 4V @ 150uA 9 mΩ @ 58A,10V TO-263-2 RoHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 6208
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AUD 1.6045
Multiples of: 800

97 A100 V9 mOhmsN - Channel 4 V + 175 C230 WSmd/SmtD2PAKReelSi1 Channel 120 nC   
SWHA7N65D


650V 7A 1.1Ω DFN(5x6) MOSFETs ROHS
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Sam&wing 3499
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AUD 0.8074
Multiples of: 1

                   
IRFH5304TRPBF


International Rectifier MOSFET 30V 1 N-CH HEXFET 4.5mOhms 16nC
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Infineon 3492
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AUD 0.564
Multiples of: 1

79 A30 V4.5 mOhmsN - Channel20 V   3.6 WSmd/SmtPQFN - 8ReelSi1 Channel20 V16 nC   
WSG02N20


MOSFET N Trench 200V 2A (Tc) 4V @ 250uA 410 mΩ @ 2A,10V SOT-223 RoHS
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Winsok 3451
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AUD 0.4135
Multiples of: 1

                   
DMN10H170SVT-7


MOSFET 100V N-Ch Enh FET 20Vgss 2.6A 1.2W
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Diodes Incorporated 3419
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AUD 0.2267
Multiples of: 5

2.6 A100 V115 mOhmsN - Channel 1 V- 55 C+ 150 C1.2 WSmd/SmtTSOT - 26 - 6ReelSi1 Channel+/- 20 V9.7 nCEnhancement  
IRLR3915TRPBF


Transistor: N-MOSFET; unipolar; 55V; 61A; 120W; DPAK
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Infineon 3321
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AUD 0.7273
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61 A55 V14 mOhmsN - Channel 3 V + 175 C120 WSmd/SmtDPAKReelSi1 Channel 92 nC   
BSC500N20NS3 G


Trans MOSFET N-CH 200V 24A
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Infineon 3298
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AUD 1.3479
Multiples of: 1

   N - Channel       Reel 1 Channel     
ME20P06-G


MOSFET P Trench 60V 17.7A (Tc) 3V @ 250uA 78 mΩ @ 20A,10V TO-252-2 (DPAK) RoHS
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MQTSUKI 2337
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AUD 0.1703
Multiples of: 5

                   
FDMS8090


Fairchild Semiconductor MOSFET 100V Sym Dual NCh MOSFET PowerTrench
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ON Semiconductor 2264
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AUD 6.2873
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10 A , 8 A100 V13 mOhms , 20 mOhmsN - Channel 3 V- 55 C+ 150 C59 WSmd/SmtPOWER - 56 - 8ReelSi2 Channel20 V Enhancement Powertrench
DMT8008LFG-7


MOSFET MOSFET BVDSS: 61V-100V
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Diodes Incorporated 110
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AUD 0.9884
Multiples of: 1

48 A80 V6.9 mOhmsN - Channel 2.5 V- 55 C+ 150 C1 WSMD/SMTPowerdi3333 - 8Reel , Cut TapeSi1 Channel- 20 V , 20 V37.7 nCEnhancement  
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