MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRL7472L1TRPBF


MOSFET 40V, 375A, .59 mOhm 220 nC Qg, Logic Lvl
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 4039
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AUD 3.5794
Multiples of: 1

564 A40 V970 uOhmsN Channel 1 V- 55 C+ 175 C341 WSmd/SmtDirectfet - L8Cut TapeSi1 Channel20 V220 nCEnhancement Strongirfet
STP140NF55


MOSFET N-Ch 55 Volt 80 Amp
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STMicroelectronics 3880
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AUD 1.7938
Multiples of: 1000

80 A55 V8 mOhmsN - Channel  - 55 C+ 175 C300 WThrough HoleTO - 220TubeSi1 Channel20 V Enhancement Stripfet
IRFH4210DTRPBF


International Rectifier MOSFET 25V Single N-Ch HEXFET PWR 50A
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Infineon 3880
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AUD 2.1683
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44 A25 V1.1 mOhmsn - channel20 V1.6 V- 55 C+ 150 C3.5 Wsmd/smtPQFN - 8Reelsi1 channel20 V77 nC   
STP18N55M5


Transistor: N-MOSFET; unipolar; 550V; 10A; 110W; TO220-3
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STMicroelectronics 3880
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AUD 2.3135
Multiples of: 1000

            Supermesh      
IRLS3036TRLPBF


MOSFET N Trench 60V 195A 2.5V @ 250uA 2.4 mΩ @ 165A,10V TO-263-2 RoHS
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Infineon 3880
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AUD 2.895
Multiples of: 800

270 A60 V2.4 mOhmsN - Channel 2.5 V + 175 C380 WSmd/SmtD2PAKReelSi1 Channel 140 nC   
FDB2532


Transistor: N-MOSFET; unipolar; 150V; 56A; 310W; D2PAK
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ON Semiconductor 3880
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AUD 3.0607
Multiples of: 800

            Powertrench®      
FDI045N10A_F102


Fairchild Semiconductor MOSFET N-Channel PwrTrench 100V 164A 4.5mOhm
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ON Semiconductor 3880
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AUD 3.4571
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120 A100 V3.8 mOhmsN - Channel 4 V- 55 C+ 175 C263 WThrough HoleI2PAK - 3TubeSi1 Channel20 V54 nCEnhancement  
STF7N95K3


STMicroelectronics MOSFET N-CHANNEL 950 V 1.1 7.2 A TO-220
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STMicroelectronics 3880
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AUD 3.6145
Multiples of: 1

7.2 A950 V1.35 Ohmsn - channel  - 55 C+ 150 C35 Wthrough holeTO - 220 - 3Tubesi1 channel30 V34 nCenhancement supermesh
TSM600NA25CIT C0G


MOSFETs 250V, 22A, Single, N-Channel Low Voltage MOSFETs
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Taiwan Semiconductor 3880
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AUD 3.6738
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22 A250 V60 mOhmsN - Channel 4.2 V- 55 C+ 150 C78 WThrough HoleITO - 220TL - 3TubeSi1 Channel- 30 V , + 30 V71 nCEnhancement  
TK110U65Z,RQ


MOSFET PWR MOS PD=190W F=1MHZ
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Toshiba 3880
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AUD 3.7238
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24 A650 V86 mOhmsN - Channel 4 V- 55 C+ 150 C190 WSMD/SMT2 - 10AF1A - 9Cut Tape , ReelSi1 Channel- 30 V , + 30 V40 nCEnhancement  
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