MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
AGM403Q


40V 85A 70W 2.8m@10V,20A 1.6V@250uA 1PCSNChannel PDFN(5x6) MOSFETs ROHS
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AGM-Semi 4578
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AUD 0.2754
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IPN70R600P7SATMA1


700V 8.5A 6.9W 600mO@10V,1.8A N Channel SOT-223 MOSFETs ROHS
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Infineon 3199
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AUD 0.3891
Multiples of: 1

8.5 A700 V490 mOhmsN - Channel 2.5 V- 40 C+ 150 C6.9 WSmd/SmtPG - SOT - 223 - 3Cut TapeSi1 Channel16 V10.5 nCEnhancement Coolmos
BXT420N03M


Transistor: N-MOSFET
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Bridgelux 3191
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AUD 0.0867
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BSC042NE7NS3 G


MOSFET N-Ch 75V 100A TDSON-8 OptiMOS 3
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Infineon 3186
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AUD 2.2817
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100 A75 V3.7 mOhmsN - Channel 2.3 V- 55 C+ 150 C125 WSmd/SmtTDSON - 8ReelSi1 Channel20 V69 nCEnhancement Optimos
SI3430DV-T1-E3


MOSFET 100V 8A 2W
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Vishay 3156
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AUD 0.7388
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   N - Channel  - 55 C+ 150 C Smd/SmtTSOP - 6Reel       
BSS606N H6327


MOSFET N-Ch 60V 2.3A SOT-89-3
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Infineon 2968
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AUD 0.1886
Multiples of: 5

   N - Channel     Smd/SmtSOT - 89 - 3Cut TapeSi1 Channel     
AUIRF4905


International Rectifier MOSFET AUTO -55V 1 P-CH HEXFET 20mOhms
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Infineon 2912
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AUD 5.1073
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- 74 A- 55 V20 mOhmsP - Channel20 V - 55 C 200 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V120 nCEnhancementAec - Q101 
SI2336DS-T1-GE3


MOSFET 30V Vds 8V Vgs SOT-23
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Vishay 2602
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AUD 0.2528
Multiples of: 1

5.2 A30 V42 mOhmsN - Channel 400 mV- 55 C+ 150 C1.8 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel4.5 V10 nCEnhancement Trenchfet
FDS4480


Fairchild Semiconductor MOSFET SO-8
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ON Semiconductor 2248
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AUD 1.3624
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10.8 A40 V12 mOhmsN - Channel  - 55 C+ 175 C2.5 WSmd/SmtSOIC - 8 NarrowReelSi1 Channel- 20 v , + 30 V Enhancement Powertrench
TC2320TG-G


Trans MOSFET N/P-CH Si 200V 8-Pin SOIC N T/R
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Microchip 6
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AUD 2.2657
Multiples of: 1

2 A200 V7 Ohms , 12 OhmsN And P - Channel  - 55 C+ 150 C Smd/SmtSOIC - 8ReelSi2 Channel20 V Enhancement  
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