MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IPB80N06S2H5ATMA2


MOSFET N-CHANNEL_55/60V
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Infineon 3880
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AUD 4.0577
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   N - Channel     Smd/SmtTO - 263 - 3Cut TapeSi1 Channel   Aec - Q101 
Hot IPB019N08N3GATMA1


Infineon Technologies MOSFET N-Ch 80V 180A D2PAK-6 OptiMOS 3
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Infineon 3880
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AUD 4.397
Multiples of: 1000

180 A80 V1.6 mOhmsN - Channel 2 V- 55 C+ 175 C300 WSmd/SmtTO - 263 - 7ReelSi1 Channel20 V206 nCEnhancement Optimos
SiHP30N60E-E3


MOSFET 600V 125mOhm@10V 29A N-Ch E-SRS
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Vishay 3880
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AUD 4.5646
Multiples of: 1

29 A600 V125 mOhmsN - Channel 2.8 V- 55 C+ 150 C250 WThrough HoleTO - 220 - 3TubeSi1 Channel30 V85 nCEnhancement  
FDBL0110N60


Fairchild Semiconductor MOSFET
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ON Semiconductor 3880
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AUD 4.8115
Multiples of: 2000

300 A60 V2.2 mOhmsn - channel 2 V- 55 C+ 175 C429 Wsmd/smtMO - 299A - 8Reelsi1 channel20 V170 nCenhancement powertrench
FCP20N60


Transistor: N-MOSFET; unipolar; 600V; 20A; 208W; TO220AB
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ON Semiconductor 3880
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AUD 4.8994
Multiples of: 1000

            superfet®      
STB11NM80T4


MOSFET N-Ch 800 Volt 11 Amp Power MDmesh
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STMicroelectronics 3880
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AUD 6.2968
Multiples of: 1000

11 A800 V400 mOhmsN - Channel30 V - 65 C+ 150 C150 WSmd/SmtD2PAK - 3Reel    Enhancement  
STB43N65M5


MOSFET Automotive-grade N-channel 650 V, 0.058 Ohm typ., 42 A MDmesh M5 Power MOSFET in a D2PAK package
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STMicroelectronics 3880
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AUD 9.0833
Multiples of: 1000

42 A650 V63 mOhmsN - Channel 3 V- 55 C+ 150 C250 WSmd/SmtD2PAK - 3Reel-1 Channel+/- 25 V100 nCEnhancementAec - Q101Mdmesh
HSBA4903


40V 35W 1PCSN-Channel&1PCSP-Channel PRPAK(5x6) MOSFETs ROHS
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HUASHUO 3878
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AUD 0.2283
Multiples of: 5

                   
SIHP12N60E-BE3


N-Channel 600V 12A (Tc) 147W (Tc) Through Hole TO-220AB
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Vishay 3878
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AUD 2.6731
Multiples of: 1

12 A600 V380 mOhmsN - Channel 4 V- 55 C+ 150 C147 WThrough HoleTO - 220AB - 3TubeSi1 Channel- 30 V , + 30 V29 nCEnhancement  
MMFTN3019E


MOSFET N Trench 30V 100mA 1.5V @ 100uA 8 Ω @ 10mA,4V SOT-523 RoHS
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Semtech 3876
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AUD 0.0246
Multiples of: 20

                   
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