MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
HYG016N10NS1TA


TOLL MOSFETs ROHS
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HuaYi 4532
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AUD 1.1779
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SSM6L61NU,LF


MOSFET Small-signal MOSFET 2 in 1 Nch+Pch ID:4A
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Toshiba 4357
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AUD 0.1987
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4 A , - 4 A20 v , - 20 V108 mOhms , 157 mOhmsN - Channel, P - Channel 400 mV , - 500 mV-+ 150 C2 WSmd/SmtUDFN - 6ReelSi2 Channel+/- 8 v , +/- 12 V3.6 nC , 6.74 nCEnhancement  
TPH2R70AR5,LQ


MOSFETs N-ch MOSFET, 100 V, 0.0027 Ohma.10V, SOP Advance(N), U-MOS11-H
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Toshiba 3410
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AUD 1.1722
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190 A100 V2.7 mOhmsN - Channel 4.3 V + 175 C210 WSMD/SMTSOP - 8Reel , Cut TapeSi1 Channel20 V52 nCEnhancement  
IXTA05N100HV


MOSFET High Voltage Power MOSFET
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IXYS 3271
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AUD 3.8254
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750 mA1 kV17 OhmsN - Channel 2.5 V- 55 C+ 150 C40 WSmd/SmtTO - 263 - 3TubeSi1 Channel30 V7.8 nCEnhancement  
IRFL210TRPBF


N-Channel 200 V 960mA (Tc) 2W (Ta), 3.1W (Tc) Surface Mount SOT-223
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Vishay 3263
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AUD 0.4064
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960 mA200 V1.5 OhmsN - Channel 2 V- 55 C+ 150 C3.1 WSmd/SmtSOT - 223 - 3Cut TapeSi1 Channel10 V8.2 nCEnhancement  
DN1509K1-G


Transistor: N-MOSFET; unipolar; 90V; 0.3A; 490mW; SOT23-3
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Microchip 3229
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AUD 0.8964
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WSD4066DN


MOSFET 2 N Channel (Dual) 40V 14A 2V @ 250uA 17 mΩ @ 14A,10V DFN3x3-8 RoHS
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Winsok 2986
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AUD 0.2625
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SI2303


30V 1.7A 200mO@10V,1.7A 1.25W P Channel SOT-23 MOSFETs ROHS
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KEXIN 1338
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AUD 0.0324
Multiples of: 20

                   
AO3420


MOSFET N-CH 20V 6A SOT23
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Alpha & Omega 1072
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AUD 0.1229
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WST2305


MOSFET P Trench 20V 4.4A 1.2V @ 250uA 60 mΩ @ 3A,4.5V SOT-23 (SOT-23-3) RoHS
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Winsok 0
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AUD 0.0516
Multiples of: 5

                   
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