MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
TSM680P06CP ROG


MOSFET -60V -18A Single P-Channel Power MOSFET
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Taiwan Semiconductor 4977
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AUD 0.3957
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18 A60 V54 mOhmsP - Channel 1.2 V- 55 C+ 150 C20 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel10 V16.4 nCEnhancement  
DMP2004VK-7


MOSFET Dual P-Channel
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Diodes Incorporated 3152
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AUD 0.0848
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530 mA20 V900 mOhmsP - Channel  - 65 C+ 150 C400 mWSmd/SmtSOT - 563 - 6Cut TapeSi2 Channel8 V Enhancement  
IAUC100N04S6N022ATMA1


MOSFET MOSFET_20V 40V
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Infineon 3150
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AUD 0.8835
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           Cut Tape       
AON7264E-HXY


60V 40A 15mΩ@10V,20A 2.5V null DFN3x3-8L MOSFETs ROHS
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HXY MOS 3147
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AUD 0.2172
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Hot IPB117N20NFD


Infineon Technologies MOSFET N-Ch 200V 84A D2PAK-2
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Infineon 3133
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AUD 2.4882
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84 A200 V10.3 mOhmsN - Channel 2 V- 55 C+ 175 C300 WSmd/SmtTO - 263 - 3ReelSi1 Channel20 V87 nCEnhancement Optimos
IPD30N10S3L-34


Infineon Technologies MOSFET N-Ch 100V 30A DPAK-2 OptiMOS-T
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Infineon 3049
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AUD 0.8833
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30 A100 V31 mOhmsN - Channel20 V1.2 V- 55 C+ 175 C57 WSmd/SmtDPAK - 3ReelSi1 Channel20 V31 nCEnhancementAec - Q101Optimos
BSC030P03NS3 G


Infineon Technologies MOSFET P-Ch -30V 25.4A TDSON-8 OptiMOS P3
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Infineon 2662
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AUD 1.3528
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25.4 A- 30 V3 mOhmsP - Channel25 V3.1 V- 55 C+ 150 C2.5 WSmd/SmtTDSON - 8ReelSi1 Channel25 V186 nCEnhancement Optimos
IRF2805PBF


Transistor: N-MOSFET; unipolar; 55V; 175A; 330W; TO220AB
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Infineon 1673
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AUD 1.5827
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            Hexfet®      
DMN3022LFG-13


MOSFET MOSFET BVDSS: 25V-30V
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Diodes Incorporated 432
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AUD 0.6091
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15 A30 V22 mOhms , 8 mOhmsN - Channel 1 v , 800 mV- 55 C+ 150 C1.96 WSmd/SmtPowerdi3333 - 8Cut TapeSi2 Channel10 V3.7 nC , 8 nCEnhancement  
IRLR8726TRPBF-HXY


30V 100A 5.5mΩ@10V,30A 2.5V null TO252-2L MOSFETs ROHS
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HXY MOS 417
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AUD 0.1759
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