MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Id - Continuous Drain Current
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BLM3400S3


SOT-23 MOSFETs ROHS
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TECH PUBLIC 24638
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AUD 0.0397
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ZVN4306AV


N-Channel 60 V 1.1A (Ta) 850mW (Ta) Through Hole TO-92
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Diodes Incorporated 4986
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AUD 1.123
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1.1 A60 V450 mOhmsN - Channel20 V - 55 C+ 150 C850 mWThrough HoleTO - 92 - 3ReelSi1 Channel20 V Enhancement  
BSC12DN20NS3G


Infineon Technologies MOSFET N-Ch 200V 11.3A TDSON-8 OptiMOS 3
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Infineon 3125
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AUD 0.7684
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11.3 A200 V108 mOhmsN - Channel 2 V- 55 C+ 150 C50 WSmd/SmtTDSON - 8ReelSi1 Channel20 V8.7 nCEnhancement Optimos
NX7002AK-ES


60V 300mA 1.5@10V,500mA 200mW 1.5V@250uA 1PCSNChannel SOT-23 MOSFETs ROHS
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ElecSuper 3123
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AUD 0.012
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IPD80R2K0P7ATMA1


Transistor: N-MOSFET; unipolar; 800V; 1.9A; 24W; PG-TO252-3
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Infineon 3120
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AUD 0.4761
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            Coolmos P7      
DMN10H120SE-13


MOSFET 100V N-Ch Enh FET 20Vgss 549pF 10nC
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Diodes Incorporated 3110
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AUD 0.2224
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3.6 A100 V110 mOhmsN - Channel 1.5 V- 55 C+ 150 C2.1 WSmd/SmtSOT - 223 - 4Cut TapeSi1 Channel10 V10 nCEnhancement  
SIS903DN-T1-GE3


MOSFET -20V Vds 8V Vgs PowerPAK 1212-8
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Vishay 1215
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AUD 0.8401
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6 A20 V20.1 mOhmsP - Channel 400 mV- 55 C+ 150 C23 WSmd/SmtPOWERPAK - 1212 - 8Cut TapeSi2 Channel4.5 V28 nCEnhancement Trenchfet, Powerpak
DMP2088LCP3-7


MOSFET BVDSS: 8V~24V X2-DSN1006-3 T&R 3K
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Diodes Incorporated 431
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AUD 0.2642
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           Cut TapeSi      
AO3418-HXY


30V 5.8A 24m 1PCSNChannel SOT-23-3L MOSFETs ROHS
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HXY MOS 164
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AUD 0.0637
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DMC3016LSD-13


MOSFET 30V N & P Comp FET Enh 2.3Vgs 25nC 22nC
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Diodes Incorporated 134
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AUD 0.4137
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8.2 A , 6.2 A30 V15 mOhms , 30 mOhmsN - Channel, P - Channel 2.3 V- 55 C+ 150 C1.2 WSmd/SmtSO - 8Cut TapeSi2 Channel20 V11.3 nC , 10.9 nCEnhancement  
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